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Masashi Nakabayashi
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Chiba, JP
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Patents Grants
last 30 patents
Information
Patent Grant
Method for evaluating quality of SiC single crystal body and method...
Patent number
11,078,596
Issue date
Aug 3, 2021
Showa Denko K.K.
Masashi Nakabayashi
G01 - MEASURING TESTING
Information
Patent Grant
Method for manufacturing silicon carbide single crystal
Patent number
10,526,722
Issue date
Jan 7, 2020
Showa Denko K.K.
Masashi Nakabayashi
C30 - CRYSTAL GROWTH
Information
Patent Grant
Silicon carbide single crystal wafer and method of manufacturing a...
Patent number
10,202,706
Issue date
Feb 12, 2019
Showa Denko K.K.
Masashi Nakabayashi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Evaluation method for bulk silicon carbide single crystals and refe...
Patent number
10,048,142
Issue date
Aug 14, 2018
Showa Denko K.K.
Kiyoshi Kojima
G01 - MEASURING TESTING
Information
Patent Grant
Method for evaluating internal stress of silicon carbide monocrysta...
Patent number
10,031,089
Issue date
Jul 24, 2018
Showa Denko K.K.
Kiyoshi Kojima
C30 - CRYSTAL GROWTH
Information
Patent Grant
Low resistivity single crystal silicon carbide wafer
Patent number
9,915,011
Issue date
Mar 13, 2018
Nippon Steel & Sumitomo Metal Corporation
Tatsuo Fujimoto
C30 - CRYSTAL GROWTH
Information
Patent Grant
Single-crystal silicon carbide and single-crystal silicon carbide w...
Patent number
9,777,403
Issue date
Oct 3, 2017
NIPPON STEEL & SUMITOMO METAL CORPORATION
Masashi Nakabayashi
C30 - CRYSTAL GROWTH
Information
Patent Grant
Process for producing epitaxial silicon carbide single crystal subs...
Patent number
9,691,607
Issue date
Jun 27, 2017
Nippon Steel & Sumitomo Metal Corporation
Takashi Aigo
C30 - CRYSTAL GROWTH
Information
Patent Grant
Apparatus for manufacturing single-crystal silicon carbide
Patent number
9,068,277
Issue date
Jun 30, 2015
Nippon Steel & Sumitomo Metal Corporation
Masashi Nakabayashi
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Crucible vessel and crucible cover having grooves for producing sin...
Patent number
8,936,680
Issue date
Jan 20, 2015
Nippon Steel & Sumitomo Metal Corporation
Masakazu Katsuno
C30 - CRYSTAL GROWTH
Information
Patent Grant
Epitaxial silicon carbide single crystal substrate and process for...
Patent number
8,901,570
Issue date
Dec 2, 2014
Nippon Steel & Sumitomo Metal Corporation
Takashi Aigo
C30 - CRYSTAL GROWTH
Information
Patent Grant
Monocrystalline silicon carbide ingot, monocrystalline silicon carb...
Patent number
8,795,624
Issue date
Aug 5, 2014
Nippon Steel & Sumitomo Metal Corporation
Masashi Nakabayashi
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Monocrystalline silicon carbide ingot, monocrystalline silicon carb...
Patent number
8,673,254
Issue date
Mar 18, 2014
Nippon Steel & Sumitomo Metal Corporation
Masashi Nakabayashi
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Silicon carbide single crystal, silicon carbide single crystal wafe...
Patent number
8,491,719
Issue date
Jul 23, 2013
Nippon Steel & Sumitomo Metal Corporation
Masashi Nakabayashi
C30 - CRYSTAL GROWTH
Information
Patent Grant
Monocrystalline silicon carbide ingot, monocrystalline silicon carb...
Patent number
8,178,389
Issue date
May 15, 2012
Nippon Steel Corporation
Masashi Nakabayashi
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
SiC single-crystal substrate and method of producing SiC single-cry...
Patent number
8,044,408
Issue date
Oct 25, 2011
Nippon Steel Corporation
Tatsuo Fujimoto
C30 - CRYSTAL GROWTH
Information
Patent Grant
Single-crystal silicon carbide ingot, and substrate and epitaxial w...
Patent number
7,972,704
Issue date
Jul 5, 2011
Nippon Steel Corporation
Noboru Ohtani
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Silicon carbide single crystal and single crystal wafer
Patent number
7,799,305
Issue date
Sep 21, 2010
Nippon Steel Corporation
Mitsuru Sawamura
C30 - CRYSTAL GROWTH
Information
Patent Grant
Silicon carbide single crystal, silicon carbide single crystal wafe...
Patent number
7,794,842
Issue date
Sep 14, 2010
Nippon Steel Corporation
Masashi Nakabayashi
C30 - CRYSTAL GROWTH
Information
Patent Grant
Electroconductive low thermal expansion ceramic sintered body
Patent number
6,953,538
Issue date
Oct 11, 2005
Nippon Steel Corporation
Fumiaki Takahashi
B82 - NANO-TECHNOLOGY
Patents Applications
last 30 patents
Information
Patent Application
METHOD FOR EVALUATING QUALITY OF SIC SINGLE CRYSTAL BODY AND METHOD...
Publication number
20200010974
Publication date
Jan 9, 2020
SHOWA DENKO K.K.
Masashi NAKABAYASHI
G01 - MEASURING TESTING
Information
Patent Application
SIC SINGLE CRYSTAL INGOT
Publication number
20180282902
Publication date
Oct 4, 2018
SHOWA DENKO K.K.
Masashi NAKABAYASHI
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
Publication number
20180251909
Publication date
Sep 6, 2018
NIPPON STEEL & SUMITOMO METAL CORPORATION
Masashi NAKABAYASHI
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CAR...
Publication number
20170342593
Publication date
Nov 30, 2017
NIPPON STEEL & SUMITOMO METAL CORPORATION
Shinya SATO
C30 - CRYSTAL GROWTH
Information
Patent Application
EVALUATION METHOD FOR BULK SILICON CARBIDE SINGLE CRYSTALS AND REFE...
Publication number
20170199092
Publication date
Jul 13, 2017
NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.
Kiyoshi KOJIMA
G01 - MEASURING TESTING
Information
Patent Application
METHOD FOR EVALUATING INTERNAL STRESS OF SILICON CARBIDE MONOCRYSTA...
Publication number
20160231256
Publication date
Aug 11, 2016
NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.
Kiyoshi Kojima
C30 - CRYSTAL GROWTH
Information
Patent Application
SILICON CARBIDE SINGLE CRYSTAL WAFER AND METHOD OF MANUFACTURING A...
Publication number
20160215414
Publication date
Jul 28, 2016
NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.
Masashi NAKABAYASHI
C30 - CRYSTAL GROWTH
Information
Patent Application
EPITAXIAL SILICON CARBIDE MONOCRYSTALLINE SUBSTRATE AND METHOD OF P...
Publication number
20150075422
Publication date
Mar 19, 2015
NIPPON STEEL & SUMITOMO METAL CORPORATION
Takashi Aigo
C30 - CRYSTAL GROWTH
Information
Patent Application
EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PROCESS FOR...
Publication number
20130049014
Publication date
Feb 28, 2013
NIPPON STEEL CORPORATION
Takashi Aigo
C30 - CRYSTAL GROWTH
Information
Patent Application
PROCESS FOR PRODUCING EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBS...
Publication number
20130029158
Publication date
Jan 31, 2013
NIPPON STEEL CORPORATION
Takashi Aigo
C30 - CRYSTAL GROWTH
Information
Patent Application
CRUCIBLE FOR PRODUCING SINGLE-CRYSTAL SILICON CARBIDE, AND PRODUCTI...
Publication number
20110308449
Publication date
Dec 22, 2011
Masakazu Katsuno
C30 - CRYSTAL GROWTH
Information
Patent Application
Epitaxial silicon carbide monocrystalline substrate and method of p...
Publication number
20110278596
Publication date
Nov 17, 2011
Takashi Aigo
C30 - CRYSTAL GROWTH
Information
Patent Application
SINGLE-CRYSTAL SILICON CARBIDE AND SINGLE-CRYSTAL SILICON CARBIDE W...
Publication number
20110206929
Publication date
Aug 25, 2011
Masashi Nakabayashi
C30 - CRYSTAL GROWTH
Information
Patent Application
MONOCRYSTALLINE SILICON CARBIDE INGOT, MONOCRYSTALLINE SILICON CARB...
Publication number
20110180765
Publication date
Jul 28, 2011
Masashi NAKABAYASHI
C30 - CRYSTAL GROWTH
Information
Patent Application
SIC SINGLE-CRYSTAL SUBSTRATE AND METHOD OF PRODUCING SIC SINGLE-CRY...
Publication number
20100295059
Publication date
Nov 25, 2010
NIPPON STEEL CORPORATION
Tatsuo FUJIMOTO
C30 - CRYSTAL GROWTH
Information
Patent Application
SINGLE-CRYSTAL SILICON CARBIDE INGOT, AND SUBSTRATE AND EPITAXIAL W...
Publication number
20100289033
Publication date
Nov 18, 2010
Noboru Ohtani
C30 - CRYSTAL GROWTH
Information
Patent Application
MONOCRYSTALLINE SILICON CARBIDE INGOT, MONOCRYSTALLINE SILICON CARB...
Publication number
20100147212
Publication date
Jun 17, 2010
Masashi NAKABAYASHI
C30 - CRYSTAL GROWTH
Information
Patent Application
Low resistivity single crystal silicon carbide wafer
Publication number
20100080956
Publication date
Apr 1, 2010
Tatsuo Fujimoto
C30 - CRYSTAL GROWTH
Information
Patent Application
Silicon carbide single crystal, silicon carbide single crystal wafe...
Publication number
20090255458
Publication date
Oct 15, 2009
NIPPON STEEL CORPORATION
Masashi Nakabayashi
C30 - CRYSTAL GROWTH
Information
Patent Application
APPARATUS FOR MANUFACTURING SINGLE-CRYSTAL SILICON CARBIDE
Publication number
20090205565
Publication date
Aug 20, 2009
Masashi Nakabayashi
C30 - CRYSTAL GROWTH
Information
Patent Application
Silicon Carbide Single Crystal, Silicon Carbide Single Crystal Wafe...
Publication number
20080220232
Publication date
Sep 11, 2008
Masashi Nakabayashi
C30 - CRYSTAL GROWTH
Information
Patent Application
Silicon Carbide Single Crystal And Single Crystal Wafer
Publication number
20080038531
Publication date
Feb 14, 2008
Mitsuru Sawamura
C30 - CRYSTAL GROWTH
Information
Patent Application
Monocrystalline Silicon Carbide Ingot, Monocrystalline Silicon Carb...
Publication number
20070262322
Publication date
Nov 15, 2007
NIPPON STEEL CORPORATION
Masashi Nakabayashi
C30 - CRYSTAL GROWTH
Information
Patent Application
Electrically conductive ceramic sintered compact exhibiting low the...
Publication number
20030139280
Publication date
Jul 24, 2003
Fumiaki Takahashi
C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES