Masashige Aoyama

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Oizumi-machi, JP

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of manufacturing thereof
- Patent number 7,224,023
- Issue date May 29, 2007
- Sanyo Electric Co., LTD
- Toshimitsu Taniguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing thereof
- Patent number 6,784,059
- Issue date Aug 31, 2004
- Sanyo Electric Co., LTD
- Toshimitsu Taniguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,683,349
- Issue date Jan 27, 2004
- Sanyo Electric Co., LTD
- Toshimitsu Taniguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,635,925
- Issue date Oct 21, 2003
- Sanyo Electric Co., LTD
- Toshimitsu Taniguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for production of semiconductor integrated circuit device
- Patent number 5,940,708
- Issue date Aug 17, 1999
- Sanyo Electric Co., Ltd.
- Masashige Aoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate field effect transistor with buried layer
- Patent number 4,908,681
- Issue date Mar 13, 1990
- Sanyo Electric Co., Ltd.
- Masanori Nishida
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device and method of manufacturing thereof
- Publication number 20050118765
- Publication date Jun 2, 2005
- Sanyo Eletric Co., Ltd.
- Toshimitsu Taniguchi
- H01 - BASIC ELECTRIC ELEMENTS