Masataka Higashiwaki

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
GA2O3-based semiconductor device
- Patent number 11,563,092
- Issue date Jan 24, 2023
- National Institute of Information and Communications Technology
- Masataka Higashiwaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate, semiconductor element and method for produ...
- Patent number 11,264,241
- Issue date Mar 1, 2022
- Tamura Corporation
- Akito Kuramata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOS Schottky diode
- Patent number 11,081,598
- Issue date Aug 3, 2021
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor element and crystalline laminate structure
- Patent number 10,861,945
- Issue date Dec 8, 2020
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOS-type Schottky diode
- Patent number 10,825,935
- Issue date Nov 3, 2020
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ga2O3-based semiconductor element
- Patent number 10,249,767
- Issue date Apr 2, 2019
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor element, method for manufacturing same, semiconductor...
- Patent number 10,230,007
- Issue date Mar 12, 2019
- Tamura Corporation
- Kohei Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
High voltage withstand Ga2O3-based single crystal schottky barrier...
- Patent number 10,199,512
- Issue date Feb 5, 2019
- Tamura Corporation
- Kohei Sasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for controlling donor concentration in Ga2O3-based and metho...
- Patent number 9,611,567
- Issue date Apr 4, 2017
- Tamura Corporation
- Kohei Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Ga2O3 semiconductor element
- Patent number 9,461,124
- Issue date Oct 4, 2016
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ga2O3 semiconductor element
- Patent number 9,437,689
- Issue date Sep 6, 2016
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ga2O3 semiconductor element
- Patent number 9,397,170
- Issue date Jul 19, 2016
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming Ga2O3-based crystal film and crystal multilayer s...
- Patent number 9,245,749
- Issue date Jan 26, 2016
- Tamura Corporation
- Kohei Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gan-based field effect transistor and production method therefor
- Patent number 7,547,911
- Issue date Jun 16, 2009
- National Institute of Information and Communications Technology, Incorporated...
- Masataka Higashiwaki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR ELEMENT AND METHOD FOR PRODU...
- Publication number 20200168460
- Publication date May 28, 2020
- TAMURA CORPORATION
- Akito KURAMATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GA2O3-BASED SEMICONDUCTOR DEVICE
- Publication number 20200144377
- Publication date May 7, 2020
- National Institute of Information and Communications Technology
- Masataka HIGASHIWAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOS SCHOTTKY DIODE
- Publication number 20200066921
- Publication date Feb 27, 2020
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOS-TYPE SCHOTTKY DIODE
- Publication number 20190148563
- Publication date May 16, 2019
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ga2O3 SEMICONDUCTOR ELEMENT
- Publication number 20180350967
- Publication date Dec 6, 2018
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH WITHSTAND VOLTAGE SCHOTTKY BARRIER DIODE
- Publication number 20180254355
- Publication date Sep 6, 2018
- TAMURA CORPORATION
- Kohei SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD FOR SAME
- Publication number 20170288061
- Publication date Oct 5, 2017
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELEMENT AND CRYSTALLINE LAMINATE STRUCTURE
- Publication number 20170278933
- Publication date Sep 28, 2017
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING SAME, SEMICONDUCTOR...
- Publication number 20170213918
- Publication date Jul 27, 2017
- TAMURA CORPORATION
- Kohei SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
Ga2O3 SEMICONDUCTOR ELEMENT
- Publication number 20160365418
- Publication date Dec 15, 2016
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GA2O3-BASED SEMICONDUCTOR ELEMENT
- Publication number 20160300953
- Publication date Oct 13, 2016
- TAMURA CORPORATION
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ga2O3 SEMICONDUCTOR ELEMENT
- Publication number 20160141372
- Publication date May 19, 2016
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING HIGH-RESISTIVITY REGION IN Ga2O3-BASED SINGLE CRY...
- Publication number 20160042949
- Publication date Feb 11, 2016
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CONTROLLING DONOR CONCENTRATION IN Ga2O3 SINGLE CRYSTAL...
- Publication number 20160002823
- Publication date Jan 7, 2016
- TAMURA CORPORATION
- Kohei SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Forming Ga2O3-Based Crystal Film and Crystal Multilayer S...
- Publication number 20150179445
- Publication date Jun 25, 2015
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ga2O3 SEMICONDUCTOR ELEMENT
- Publication number 20140217405
- Publication date Aug 7, 2014
- TAMURA CORPORATION
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ga2O3 SEMICONDUCTOR ELEMENT
- Publication number 20140217469
- Publication date Aug 7, 2014
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ga2O3 SEMICONDUCTOR ELEMENT
- Publication number 20140217471
- Publication date Aug 7, 2014
- National Institute of Information and Communicatio ns Technology
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ga2O3 SEMICONDUCTOR ELEMENT
- Publication number 20140217470
- Publication date Aug 7, 2014
- TAMURA CORPORATION
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gan-Based Field Effect Transistor and Production Method Therefor
- Publication number 20070295990
- Publication date Dec 27, 2007
- National Institute of Information and Communications Technology, Incorporated...
- Masataka Higashiwaki
- H01 - BASIC ELECTRIC ELEMENTS

Masataka Higashiwaki

Person

Patents Grantslast 30 patents

GA2O3-based semiconductor device

Semiconductor substrate, semiconductor element and method for produ...

Trench MOS Schottky diode

Semiconductor element and crystalline laminate structure

Trench MOS-type Schottky diode

Ga2O3-based semiconductor element

Semiconductor element, method for manufacturing same, semiconductor...

High voltage withstand Ga2O3-based single crystal schottky barrier...

Method for controlling donor concentration in Ga2O3-based and metho...

Ga2O3 semiconductor element

Ga2O3 semiconductor element

Ga2O3 semiconductor element

Method of forming Ga2O3-based crystal film and crystal multilayer s...

Gan-based field effect transistor and production method therefor

Patents Applicationslast 30 patents

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR ELEMENT AND METHOD FOR PRODU...

GA2O3-BASED SEMICONDUCTOR DEVICE

TRENCH MOS SCHOTTKY DIODE

TRENCH MOS-TYPE SCHOTTKY DIODE

Ga2O3 SEMICONDUCTOR ELEMENT

HIGH WITHSTAND VOLTAGE SCHOTTKY BARRIER DIODE

SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD FOR SAME

SEMICONDUCTOR ELEMENT AND CRYSTALLINE LAMINATE STRUCTURE

SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING SAME, SEMICONDUCTOR...

Ga2O3 SEMICONDUCTOR ELEMENT

GA2O3-BASED SEMICONDUCTOR ELEMENT

Ga2O3 SEMICONDUCTOR ELEMENT

METHOD OF FORMING HIGH-RESISTIVITY REGION IN Ga2O3-BASED SINGLE CRY...

METHOD FOR CONTROLLING DONOR CONCENTRATION IN Ga2O3 SINGLE CRYSTAL...

Method of Forming Ga2O3-Based Crystal Film and Crystal Multilayer S...

Ga2O3 SEMICONDUCTOR ELEMENT

Ga2O3 SEMICONDUCTOR ELEMENT

Ga2O3 SEMICONDUCTOR ELEMENT

Ga2O3 SEMICONDUCTOR ELEMENT

Gan-Based Field Effect Transistor and Production Method Therefor