Masatake Katayama

Person

Takasaki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of chemical vapor deposition
- Patent number 6,254,933
- Issue date Jul 3, 2001
- Shin-Etsu Handotai, Ltd.
- Hitoshi Habuka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for thin film growth
- Patent number 6,048,793
- Issue date Apr 11, 2000
- Shin-Etsu Handotai Co., Ltd.
- Hitoshi Habuka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for smoothing surface of silicon single crystal substrate
- Patent number 6,008,128
- Issue date Dec 28, 1999
- Shin-Etsu Handotai Co., Ltd.
- Hitoshi Habuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI wafer and method for the preparation thereof
- Patent number 5,998,281
- Issue date Dec 7, 1999
- Shin-Etsu Handotai Co., Ltd.
- Hiroji Aga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for vapor phase growth
- Patent number 5,938,840
- Issue date Aug 17, 1999
- Shin-Etsu Handotai, Co., Ltd.
- Hitoshi Habuka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of fabricating bonded wafer
- Patent number 5,804,494
- Issue date Sep 8, 1998
- Shin-Etsu Handotai Co., Ltd.
- Kiyoshi Mitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heat treatment jig for semiconductor wafers and a method for treati...
- Patent number 5,759,426
- Issue date Jun 2, 1998
- Shin-Etsu Handotai Co., Ltd.
- Norihiro Kobayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for vapor phase growth
- Patent number 5,755,878
- Issue date May 26, 1998
- Shin-Etsu Handotai Co., Ltd.
- Hitoshi Habuka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of chemical vapor deposition and reactor therefor
- Patent number 5,749,974
- Issue date May 12, 1998
- Shin-Etsu Handotai Co., Ltd.
- Hitoshi Habuka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for vapor-phase growth
- Patent number 5,718,762
- Issue date Feb 17, 1998
- Shin-Etsu Handotai Co., Ltd.
- Hitoshi Habuka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing semiconductor substrate
- Patent number 5,696,034
- Issue date Dec 9, 1997
- Shin-Etsu Handotai Co., Ltd.
- Masatake Katayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for production of SOI substrate
- Patent number 5,650,353
- Issue date Jul 22, 1997
- Shin-Etsu Handotai Co., Ltd.
- Katsuo Yoshizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of estimating quantity of boron at bonding interface in bond...
- Patent number 5,538,904
- Issue date Jul 23, 1996
- Shin-Etsu Handotai Co., Ltd.
- Kiyoshi Mitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making bonded wafers
- Patent number 5,514,235
- Issue date May 7, 1996
- Shin-Etsu Handotai Co., Ltd.
- Kiyoshi Mitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI substrate and manufacturing method therefor
- Patent number 5,478,408
- Issue date Dec 26, 1995
- Shin-Etsu Handotai Co., Ltd.
- Kiyoshi Mitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for production of extremely thin SOI film subs...
- Patent number 5,427,052
- Issue date Jun 27, 1995
- Shin-Etsu Handotai Co., Ltd.
- Yutaka Ohta
- G01 - MEASURING TESTING
Information Patent Grant
Method of making a SOI film having a more uniform thickness in a SO...
- Patent number 5,393,370
- Issue date Feb 28, 1995
- Shin-Etsu Handotai Kabushiki Kaisha
- Yutaka Ohta
- G01 - MEASURING TESTING
Information Patent Grant
Apparatus for production of extremely thin SOI film substrate
- Patent number 5,376,215
- Issue date Dec 27, 1994
- Shin-Etsu Handotai Co., Ltd.
- Yutaka Ohta
- G01 - MEASURING TESTING
Information Patent Grant
Dielectrically isolated substrate and a process for producing the same
- Patent number 5,336,634
- Issue date Aug 9, 1994
- Shin-Etsu Handotui Co., Ltd.
- Masatake Katayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating SOI substrate with uniform thin silicon film
- Patent number 5,240,883
- Issue date Aug 31, 1993
- Shin-Etsu Handotai Co., Ltd.
- Takao Abe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling thickness of single crystal thin-film layer...
- Patent number 5,223,080
- Issue date Jun 29, 1993
- Shin-Etsu Handotai Co., Ltd.
- Yutaka Ohta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for production of dielectric-separation substrate
- Patent number 5,183,783
- Issue date Feb 2, 1993
- Shin-Etsu Handotai Co., Ltd.
- Yutaka Ohta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of boron diffusion into semiconductor wafers having reduced...
- Patent number 5,171,708
- Issue date Dec 15, 1992
- Shin-Etsu Handotai Co., Ltd.
- Masatake Katayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for production of dielectric-separation substrate
- Patent number 5,124,274
- Issue date Jun 23, 1992
- Shin-Etsu Handotai Co., Ltd.
- Konomu Ohki
- H01 - BASIC ELECTRIC ELEMENTS

Masatake Katayama

Person

Patents Grantslast 30 patents

Method of chemical vapor deposition

Method and apparatus for thin film growth

Method for smoothing surface of silicon single crystal substrate

SOI wafer and method for the preparation thereof

Method for vapor phase growth

Method of fabricating bonded wafer

Heat treatment jig for semiconductor wafers and a method for treati...

Method for vapor phase growth

Method of chemical vapor deposition and reactor therefor

Method for vapor-phase growth

Method for producing semiconductor substrate

Method for production of SOI substrate

Method of estimating quantity of boron at bonding interface in bond...

Method of making bonded wafers

SOI substrate and manufacturing method therefor

Method and apparatus for production of extremely thin SOI film subs...

Method of making a SOI film having a more uniform thickness in a SO...

Apparatus for production of extremely thin SOI film substrate

Dielectrically isolated substrate and a process for producing the same

Method of fabricating SOI substrate with uniform thin silicon film

Method for controlling thickness of single crystal thin-film layer...

Method for production of dielectric-separation substrate

Method of boron diffusion into semiconductor wafers having reduced...

Method for production of dielectric-separation substrate