Masatake Nagaya

Person

Nishikamo-gun, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide wafer and method for manufacturing the same
- Patent number 12,188,151
- Issue date Jan 7, 2025
- Denso Corporation
- Hiroaki Fujibayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC wafer and manufacturing method for SiC wafer
- Patent number 12,139,813
- Issue date Nov 12, 2024
- Toyota Tsusho Corporation
- Masatake Nagaya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Processed wafer and method of manufacturing chip formation wafer
- Patent number 11,881,407
- Issue date Jan 23, 2024
- Denso Corporation
- Masatake Nagaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip and method for manufacturing the same
- Patent number 11,810,821
- Issue date Nov 7, 2023
- Denso Corporation
- Masatake Nagaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride semiconductor device and method for manufacturing t...
- Patent number 11,810,783
- Issue date Nov 7, 2023
- Denso Corporation
- Chiaki Sasaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing gallium nitride semiconductor device
- Patent number 11,784,039
- Issue date Oct 10, 2023
- Denso Corporation
- Jun Kojima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seed crystal for single crystal 4H—SiC growth and method for proces...
- Patent number 11,781,244
- Issue date Oct 10, 2023
- Resonac Corporation
- Takanori Kido
- B24 - GRINDING POLISHING
Information Patent Grant
Wafer processing method, wafer polishing apparatus, and ingot slici...
- Patent number 8,758,087
- Issue date Jun 24, 2014
- Denso Corporation
- Kyohei Koutake
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Method for manufacturing silicon carbide semiconductor apparatus
- Patent number 7,763,543
- Issue date Jul 27, 2010
- Denso Corporation
- Masatake Nagaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device arrangement and method of fabricating the same
- Patent number 6,710,435
- Issue date Mar 23, 2004
- Denso Corporation
- Masatake Nagaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor substrate
- Patent number 6,060,344
- Issue date May 9, 2000
- Denso Corporation
- Masaki Matsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polishing method for SOI
- Patent number 5,851,846
- Issue date Dec 22, 1998
- Nippondenso Co., Ltd.
- Masaki Matsui
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20240162092
- Publication date May 16, 2024
- DENSO CORPORATION
- YUJI NAGUMO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE WAFER MANUFACTURING APPARATUS
- Publication number 20240141550
- Publication date May 2, 2024
- DENSO CORPORATION
- HIROAKI FUJIBAYASHI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20240038711
- Publication date Feb 1, 2024
- DENSO CORPORATION
- TERUAKI KUMAZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20240038590
- Publication date Feb 1, 2024
- DENSO CORPORATION
- MASASHI UECHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20240030056
- Publication date Jan 25, 2024
- DENSO CORPORATION
- MASASHI UECHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20230326748
- Publication date Oct 12, 2023
- DENSO CORPORATION
- SHOSUKE NAKABAYASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING GALLIUM NITRIDE SUBSTRATE
- Publication number 20230238281
- Publication date Jul 27, 2023
- DENSO CORPORATION
- MASATAKE NAGAYA
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
SEMICONDUCTOR WAFER PROCESSING APPARATUS AND METHOD OF MANUFACTURIN...
- Publication number 20230230829
- Publication date Jul 20, 2023
- DENSO CORPORATION
- SHOSUKE NAKABAYASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE WAFER AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230203709
- Publication date Jun 29, 2023
- DENSO CORPORATION
- HIROAKI FUJIBAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230197442
- Publication date Jun 22, 2023
- DENSO CORPORATION
- TAKASHI USHIJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20230116208
- Publication date Apr 13, 2023
- DENSO CORPORATION
- TAKASHI USHIJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CHIP AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230116302
- Publication date Apr 13, 2023
- DENSO CORPORATION
- MASATAKE NAGAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CHIP AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220352027
- Publication date Nov 3, 2022
- DENSO CORPORATION
- Shinichi Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SiC SUBSTRATE
- Publication number 20220285502
- Publication date Sep 8, 2022
- Denso Corporation
- Masatake NAGAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CHIP, PROCESSED WAFER, AND METHOD FOR MANUFACTURING S...
- Publication number 20220285219
- Publication date Sep 8, 2022
- DENSO CORPORATION
- MASATAKE NAGAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESSED WAFER AND METHOD OF MANUFACTURING CHIP FORMATION WAFER
- Publication number 20220130675
- Publication date Apr 28, 2022
- DENSO CORPORATION
- Masatake NAGAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CHIP AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20210327757
- Publication date Oct 21, 2021
- DENSO CORPORATION
- Masatake Nagaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
- Publication number 20210327710
- Publication date Oct 21, 2021
- DENSO CORPORATION
- Chiaki SASAOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING GALLIUM NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20210327702
- Publication date Oct 21, 2021
- DENSO CORPORATION
- Jun KOJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC WAFER AND MANUFACTURING METHOD FOR SiC WAFER
- Publication number 20210301421
- Publication date Sep 30, 2021
- Denso Corporation
- Masatake NAGAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEED CRYSTAL FOR SINGLE CRYSTAL 4H-SiC GROWTH AND METHOD FOR PROCES...
- Publication number 20210047750
- Publication date Feb 18, 2021
- SHOWA DENKO K.K.
- Takanori KIDO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20190035684
- Publication date Jan 31, 2019
- Denso Corporation
- Masatake NAGAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER PROCESSING METHOD, WAFER POLISHING APPARATUS, AND INGOT SLICI...
- Publication number 20110294403
- Publication date Dec 1, 2011
- DENSO CORPORATION
- Kyohei KOUTAKE
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Application
Method for manufacturing silicon carbide semiconductor apparatus
- Publication number 20090124060
- Publication date May 14, 2009
- DENSO CORPORATION
- Masatake Nagaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device arrangement and method of fabricating the same
- Publication number 20030032246
- Publication date Feb 13, 2003
- Masatake Nagaya
- H01 - BASIC ELECTRIC ELEMENTS

Masatake Nagaya

Person

Patents Grantslast 30 patents

Silicon carbide wafer and method for manufacturing the same

SiC wafer and manufacturing method for SiC wafer

Processed wafer and method of manufacturing chip formation wafer

Semiconductor chip and method for manufacturing the same

Gallium nitride semiconductor device and method for manufacturing t...

Method for manufacturing gallium nitride semiconductor device

Seed crystal for single crystal 4H—SiC growth and method for proces...

Wafer processing method, wafer polishing apparatus, and ingot slici...

Method for manufacturing silicon carbide semiconductor apparatus

Semiconductor device arrangement and method of fabricating the same

Method for producing a semiconductor substrate

Polishing method for SOI

Patents Applicationslast 30 patents

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SILICON CARBIDE WAFER MANUFACTURING APPARATUS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING GALLIUM NITRIDE SUBSTRATE

SEMICONDUCTOR WAFER PROCESSING APPARATUS AND METHOD OF MANUFACTURIN...

SILICON CARBIDE WAFER AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR CHIP AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR CHIP AND METHOD FOR MANUFACTURING THE SAME

METHOD FOR MANUFACTURING SiC SUBSTRATE

SEMICONDUCTOR CHIP, PROCESSED WAFER, AND METHOD FOR MANUFACTURING S...

PROCESSED WAFER AND METHOD OF MANUFACTURING CHIP FORMATION WAFER

SEMICONDUCTOR CHIP AND METHOD FOR MANUFACTURING THE SAME

GALLIUM NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...

METHOD FOR MANUFACTURING GALLIUM NITRIDE SEMICONDUCTOR DEVICE

SiC WAFER AND MANUFACTURING METHOD FOR SiC WAFER

SEED CRYSTAL FOR SINGLE CRYSTAL 4H-SiC GROWTH AND METHOD FOR PROCES...

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

WAFER PROCESSING METHOD, WAFER POLISHING APPARATUS, AND INGOT SLICI...

Method for manufacturing silicon carbide semiconductor apparatus

Semiconductor device arrangement and method of fabricating the same