Masato Fujinaga

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
High-frequency semiconductor device and method of manufacturing the...
- Patent number 7,365,433
- Issue date Apr 29, 2008
- Renesas Technology Corp.
- Masato Fujinaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-Frequency semiconductor device with noise elimination characte...
- Patent number 7,095,118
- Issue date Aug 22, 2006
- Renesas Technology Corp.
- Masato Fujinaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including low dielectric constant insulating f...
- Patent number 6,670,711
- Issue date Dec 30, 2003
- Renesas Technology Corp.
- Masato Fujinaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active trench isolation structure to prevent punch-through and junc...
- Patent number 6,396,113
- Issue date May 28, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Masato Fujinaga
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
High-frequency semiconductor device and method of manufacturing the...
- Publication number 20060267209
- Publication date Nov 30, 2006
- Renesas Technology Corp.
- Masato Fujinaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing same
- Publication number 20030089922
- Publication date May 15, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Masato Fujinaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High- frequency semiconductor device and method of manufacturing th...
- Publication number 20020056920
- Publication date May 16, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Masato Fujinaga
- H01 - BASIC ELECTRIC ELEMENTS