Masato Irikura

Person

Hyogo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Chamfered freestanding nitride semiconductor wafer and method of ch...
- Patent number 8,723,219
- Issue date May 13, 2014
- Sumitomo Electric Industries, Ltd.
- Masahiro Nakayama
- B24 - GRINDING POLISHING
Information Patent Grant
Chamfered freestanding nitride semiconductor wafer and method of ch...
- Patent number 8,482,032
- Issue date Jul 9, 2013
- Sumitomo Electric Industries, Ltd.
- Masahiro Nakayama
- B24 - GRINDING POLISHING
Information Patent Grant
GaN substrate, epitaxial layer-provided substrate, methods of manuf...
- Patent number 8,283,694
- Issue date Oct 9, 2012
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride substrate, epitaxial layer-provided substrate, me...
- Patent number 8,101,968
- Issue date Jan 24, 2012
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Chamfered freestanding nitride semiconductor wafer and method of ch...
- Patent number 8,022,438
- Issue date Sep 20, 2011
- Sumitomo Electric Industries, Ltd.
- Masahiro Nakayama
- B24 - GRINDING POLISHING
Information Patent Grant
Group III nitride crystal and method for surface treatment thereof,...
- Patent number 7,919,343
- Issue date Apr 5, 2011
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride substrate, epitaxial layer-provided substrate, me...
- Patent number 7,901,960
- Issue date Mar 8, 2011
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Surface treatment method for nitride crystal, nitride crystal subst...
- Patent number 7,851,381
- Issue date Dec 14, 2010
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Method of producing group 3 nitride substrate wafers and group 3 ni...
- Patent number 7,662,239
- Issue date Feb 16, 2010
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- B24 - GRINDING POLISHING
Information Patent Grant
Chamfered freestanding nitride semiconductor wafer and method of ch...
- Patent number 7,550,780
- Issue date Jun 23, 2009
- Sumitomo Electric Industries, Ltd.
- Masahiro Nakayama
- B24 - GRINDING POLISHING
Information Patent Grant
Nitride semiconductor substrate and method of producing same
- Patent number 7,390,747
- Issue date Jun 24, 2008
- Sumitomo Electric Industries, Ltd.
- Masato Irikura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chamfered freestanding nitride semiconductor wafer and method of ch...
- Patent number 7,195,545
- Issue date Mar 27, 2007
- Sumitomo Electric Industries, Ltd.
- Masahiro Nakayama
- B24 - GRINDING POLISHING
Information Patent Grant
Nitride semiconductor substrate and method of producing same
- Patent number 7,154,131
- Issue date Dec 26, 2006
- Sumitomo Electric Industries, Ltd.
- Masato Irikura
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CHAMFERED FREESTANDING NITRIDE SEMICONDUCTOR WAFER AND METHOD OF CH...
- Publication number 20130292696
- Publication date Nov 7, 2013
- MASAHIRO NAKAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, ME...
- Publication number 20120094473
- Publication date Apr 19, 2012
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE CRYSTAL AND METHOD FOR SURFACE TREATMENT THEREOF,...
- Publication number 20110146565
- Publication date Jun 23, 2011
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Keiji ISHIBASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, ME...
- Publication number 20110133207
- Publication date Jun 9, 2011
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, METHODS OF MANUF...
- Publication number 20110133209
- Publication date Jun 9, 2011
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, ME...
- Publication number 20100187540
- Publication date Jul 29, 2010
- SUMITOMO ELECTRIC INDUSTRIES , LTD.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Wafer and Semiconductor Wafer Inspection Method
- Publication number 20100013058
- Publication date Jan 21, 2010
- Sumitomo Electric Industries, Ltd.
- Kaoru Shibata
- G01 - MEASURING TESTING
Information Patent Application
GROUP III NITRIDE CRYSTAL AND METHOD FOR SURFACE TREATMENT THEREOF,...
- Publication number 20090273060
- Publication date Nov 5, 2009
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
CHAMFERED FREESTANDING NITRIDE SEMICONDUCTOR WAFER AND METHOD OF CH...
- Publication number 20090218659
- Publication date Sep 3, 2009
- Sumitomo Electric Industries, Ltd.
- Masahiro Nakayama
- B24 - GRINDING POLISHING
Information Patent Application
GaN Substrate Manufacturing Method, GaN Substrate, and Semiconducto...
- Publication number 20090127564
- Publication date May 21, 2009
- Sumitomo Electric Industries, Ltd.
- Masato Irikura
- C30 - CRYSTAL GROWTH
Information Patent Application
Manufacturing method of group III nitride substrate, group III nitr...
- Publication number 20080057608
- Publication date Mar 6, 2008
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of producing group 3 nitride substrate wafers and group 3 ni...
- Publication number 20080014756
- Publication date Jan 17, 2008
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Keiji Ishibashi
- B24 - GRINDING POLISHING
Information Patent Application
Surface treatment method for nitride crystal, nitride crystal subst...
- Publication number 20070281484
- Publication date Dec 6, 2007
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
Chamfered freestanding nitride semiconductor wafer and method of ch...
- Publication number 20060194520
- Publication date Aug 31, 2006
- Sumitomo Electric Industries, Ltd.
- Masahiro Nakayama
- B24 - GRINDING POLISHING
Information Patent Application
Nitride semiconductor substrate and method of producing same
- Publication number 20060071234
- Publication date Apr 6, 2006
- Sumitomo Electric Industries, Ltd.
- Masato Irikura
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitride semiconductor substrate and method of producing same
- Publication number 20050073027
- Publication date Apr 7, 2005
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Masato Irikura
- C30 - CRYSTAL GROWTH
Information Patent Application
Chamfered freestanding nitride semiconductor wafer and method of ch...
- Publication number 20040195658
- Publication date Oct 7, 2004
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Masahiro Nakayama
- B24 - GRINDING POLISHING

Masato Irikura

Person

Patents Grantslast 30 patents

Chamfered freestanding nitride semiconductor wafer and method of ch...

Chamfered freestanding nitride semiconductor wafer and method of ch...

GaN substrate, epitaxial layer-provided substrate, methods of manuf...

Group III nitride substrate, epitaxial layer-provided substrate, me...

Chamfered freestanding nitride semiconductor wafer and method of ch...

Group III nitride crystal and method for surface treatment thereof,...

Group III nitride substrate, epitaxial layer-provided substrate, me...

Surface treatment method for nitride crystal, nitride crystal subst...

Method of producing group 3 nitride substrate wafers and group 3 ni...

Chamfered freestanding nitride semiconductor wafer and method of ch...

Nitride semiconductor substrate and method of producing same

Chamfered freestanding nitride semiconductor wafer and method of ch...

Nitride semiconductor substrate and method of producing same

Patents Applicationslast 30 patents

CHAMFERED FREESTANDING NITRIDE SEMICONDUCTOR WAFER AND METHOD OF CH...

GROUP III NITRIDE SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, ME...

GROUP III NITRIDE CRYSTAL AND METHOD FOR SURFACE TREATMENT THEREOF,...

GROUP III NITRIDE SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, ME...

GaN SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, METHODS OF MANUF...

GROUP III NITRIDE SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, ME...

Semiconductor Wafer and Semiconductor Wafer Inspection Method

GROUP III NITRIDE CRYSTAL AND METHOD FOR SURFACE TREATMENT THEREOF,...

CHAMFERED FREESTANDING NITRIDE SEMICONDUCTOR WAFER AND METHOD OF CH...

GaN Substrate Manufacturing Method, GaN Substrate, and Semiconducto...

Manufacturing method of group III nitride substrate, group III nitr...

Method of producing group 3 nitride substrate wafers and group 3 ni...

Surface treatment method for nitride crystal, nitride crystal subst...

Chamfered freestanding nitride semiconductor wafer and method of ch...

Nitride semiconductor substrate and method of producing same

Nitride semiconductor substrate and method of producing same

Chamfered freestanding nitride semiconductor wafer and method of ch...