Masato Ishibashi

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 8,592,284
- Issue date Nov 26, 2013
- Renesas Electronics Corporation
- Masato Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and its manufacturing method
- Patent number 8,043,918
- Issue date Oct 25, 2011
- Renesas Electronics Corporation
- Takashi Kuroi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and its manufacturing method
- Patent number 7,791,163
- Issue date Sep 7, 2010
- Renesas Technology Corp.
- Takashi Kuroi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
- Publication number 20100285651
- Publication date Nov 11, 2010
- Renesas Technology Corp.
- Takashi Kuroi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20100044802
- Publication date Feb 25, 2010
- RENESAS TECHNOLOGY CORP.
- Masato Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Its Manufacturing Method
- Publication number 20070241373
- Publication date Oct 18, 2007
- Renesas Technology Corp.
- Takashi Kuroi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20060214212
- Publication date Sep 28, 2006
- Renesas Technology Corp.
- Katsuyuki HORITA
- H01 - BASIC ELECTRIC ELEMENTS