MASATO MATSUSHIMA

Person

ITAMI, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for preparing an epitaxial wafer having a gallium nitride e...
- Patent number 6,387,722
- Issue date May 14, 2002
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer having a gallium nitride epitaxial layer deposited...
- Patent number 6,270,587
- Issue date Aug 7, 2001
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer and method of preparing the same
- Patent number 6,031,252
- Issue date Feb 29, 2000
- Sumitomo Electric Industries, Ltd.
- Yoshiki Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for vapor phase epitaxy of compound semiconductor
- Patent number 5,970,314
- Issue date Oct 19, 1999
- Sumitomo Electric Industries, Ltd.
- Takuji Okahisa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial wafer and method of preparing the same
- Patent number 5,843,590
- Issue date Dec 1, 1998
- Sumitomo Electric Industries, Ltd.
- Yoshiki Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor light emitting device and method of preparin...
- Patent number 5,756,374
- Issue date May 26, 1998
- Sumitomo Electric Industries, Ltd.
- Yoshiki Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor light emitting device and method of preparin...
- Patent number 5,665,986
- Issue date Sep 9, 1997
- Sumitomo Electric Industries, Ltd.
- Yoshiki Miura
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE AND METHOD OF PROUCING SAME
- Publication number 20020011599
- Publication date Jan 31, 2002
- KENSAKU MOTOKI
- C30 - CRYSTAL GROWTH

MASATO MATSUSHIMA

Person

Patents Grantslast 30 patents

Methods for preparing an epitaxial wafer having a gallium nitride e...

Epitaxial wafer having a gallium nitride epitaxial layer deposited...

Epitaxial wafer and method of preparing the same

Process for vapor phase epitaxy of compound semiconductor

Epitaxial wafer and method of preparing the same

Compound semiconductor light emitting device and method of preparin...

Compound semiconductor light emitting device and method of preparin...

Patents Applicationslast 30 patents

GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE AND METHOD OF PROUCING SAME