Masato Miyamoto

Person

Yokkaichi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional memory device containing self-aligned bit line co...
- Patent number 11,935,784
- Issue date Mar 19, 2024
- SanDisk Technologies LLC
- Fumitaka Amano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional NAND memory having improved connection between so...
- Patent number 9,711,532
- Issue date Jul 18, 2017
- SanDisk Technologies LLC
- Masato Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional NAND memory having improved connection between so...
- Patent number 9,530,781
- Issue date Dec 27, 2016
- SanDisk Technologies LLC
- Masato Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom recess process for an outer blocking dielectric layer inside...
- Patent number 9,305,937
- Issue date Apr 5, 2016
- SanDisk Technologies Inc.
- Masanori Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING INTEGRATED CONTACT-AND-S...
- Publication number 20240213145
- Publication date Jun 27, 2024
- SANDISK TECHNOLOGIES LLC
- Masato MIYAMOTO
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH THROUGH-STACK CONTACT VIA STRU...
- Publication number 20240215243
- Publication date Jun 27, 2024
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Masanori TSUTSUMI
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ETCH STOP STRUCTURES FOR...
- Publication number 20240179907
- Publication date May 30, 2024
- SANDISK TECHNOLOGIES LLC
- Hirofumi TOKITA
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING MEMORY OPENING MONITORIN...
- Publication number 20240107758
- Publication date Mar 28, 2024
- SANDISK TECHNOLOGIES LLC
- Hiroyuki OGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING SELF-ALIGNED BIT LINE CO...
- Publication number 20220399232
- Publication date Dec 15, 2022
- SANDISK TECHNOLOGIES LLC
- Fumitaka AMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL NAND MEMORY HAVING IMPROVED CONNECTION BETWEEN SO...
- Publication number 20170033121
- Publication date Feb 2, 2017
- SanDisk Technologies LLC
- Masato Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL NAND MEMORY HAVING IMPROVED CONNECTION BETWEEN SO...
- Publication number 20160181264
- Publication date Jun 23, 2016
- SANDISK TECHNOLOGIES INC.
- Masato Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOTTOM RECESS PROCESS FOR AN OUTER BLOCKING DIELECTRIC LAYER INSIDE...
- Publication number 20160111439
- Publication date Apr 21, 2016
- Masanori Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS

Masato Miyamoto

Person

Patents Grantslast 30 patents

Three-dimensional memory device containing self-aligned bit line co...

Three dimensional NAND memory having improved connection between so...

Three dimensional NAND memory having improved connection between so...

Bottom recess process for an outer blocking dielectric layer inside...

Patents Applicationslast 30 patents

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING INTEGRATED CONTACT-AND-S...

THREE-DIMENSIONAL MEMORY DEVICE WITH THROUGH-STACK CONTACT VIA STRU...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ETCH STOP STRUCTURES FOR...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING MEMORY OPENING MONITORIN...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING SELF-ALIGNED BIT LINE CO...

THREE DIMENSIONAL NAND MEMORY HAVING IMPROVED CONNECTION BETWEEN SO...

THREE DIMENSIONAL NAND MEMORY HAVING IMPROVED CONNECTION BETWEEN SO...

BOTTOM RECESS PROCESS FOR AN OUTER BLOCKING DIELECTRIC LAYER INSIDE...