Masato Mushiage

Person

Kyoto, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Superluminescent diode and method for manufacturing the same
- Patent number 5,981,978
- Issue date Nov 9, 1999
- Rohm Co., Ltd.
- Masato Mushiage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser
- Patent number 5,933,443
- Issue date Aug 3, 1999
- Rohm Co., Ltd.
- Masato Mushiage
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Optical communication unit
- Patent number 5,661,581
- Issue date Aug 26, 1997
- Rohm Co., Ltd.
- Masato Mushiage
- G02 - OPTICS
Information Patent Grant
Superluminescent diode with offset current injection regions
- Patent number 5,574,304
- Issue date Nov 12, 1996
- Rohm Co., Ltd.
- Masato Mushiage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser and manufacturing method therefor
- Patent number 5,392,304
- Issue date Feb 21, 1995
- Rohm Co., Ltd.
- Haruo Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device
- Patent number 5,235,609
- Issue date Aug 10, 1993
- Rohm Co., Ltd.
- Satoshi Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor lasers
- Patent number 5,153,148
- Issue date Oct 6, 1992
- Rohm Co., Ltd.
- Hajime Sakiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor lasers
- Patent number 4,999,841
- Issue date Mar 12, 1991
- Rohm Co., Ltd.
- Hajime Sakiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Molecular beam epitaxy apparatus
- Patent number 4,944,246
- Issue date Jul 31, 1990
- Rohm Co., Ltd.
- Haruo Tanaka
- C30 - CRYSTAL GROWTH

Masato Mushiage

Person

Patents Grantslast 30 patents

Superluminescent diode and method for manufacturing the same

Semiconductor laser

Optical communication unit

Superluminescent diode with offset current injection regions

Semiconductor laser and manufacturing method therefor

Semiconductor laser device

Method of fabricating semiconductor lasers

Semiconductor lasers

Molecular beam epitaxy apparatus