Masato Shinohara

Person

Kanonji-city, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing reformed sic wafer, epitaxial layer-attach...
- Patent number 11,261,539
- Issue date Mar 1, 2022
- Toyo Tanso Co., Ltd.
- Satoshi Torimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heat treatment vessel for single-crystal silicon carbide substrate...
- Patent number 10,665,485
- Issue date May 26, 2020
- Toyo Tanso Co., Ltd.
- Satoshi Torimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface treatment method for SiC substrate
- Patent number 10,665,465
- Issue date May 26, 2020
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Susceptor and method for manufacturing same
- Patent number 10,522,386
- Issue date Dec 31, 2019
- Toyo Tanso Co., Ltd.
- Masato Shinohara
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Etching method for SiC substrate and holding container
- Patent number 10,388,536
- Issue date Aug 20, 2019
- Toyo Tanso Co., Ltd.
- Satoshi Torimi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide-tantalum carbide composite and susceptor
- Patent number 9,764,992
- Issue date Sep 19, 2017
- Toyo Tanso Co., Ltd.
- Masato Shinohara
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
REFORMED SIC WAFER MANUFACTURING METHOD, EPITAXIAL LAYER-ATTACHED S...
- Publication number 20200095703
- Publication date Mar 26, 2020
- TOYO TANSO CO., LTD
- Satoshi Torimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEAT TREATMENT VESSEL FOR SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE...
- Publication number 20180301359
- Publication date Oct 18, 2018
- TOYO TANSO CO., LTD
- Satoshi Torimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING THIN SiC WAFER AND THIN SiC WAFER
- Publication number 20180069084
- Publication date Mar 8, 2018
- Toyo Tanso Co., Ltd
- SATOSHI TORIMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE TREATMENT METHOD FOR SiC SUBSTRATE
- Publication number 20170345672
- Publication date Nov 30, 2017
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Application
ETCHING METHOD FOR SIC SUBSTRATE AND HOLDING CONTAINER
- Publication number 20170323797
- Publication date Nov 9, 2017
- TOYO TANSO CO., LTD
- Satoshi Torimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING THIN SiC WAFER AND THIN SiC WAFER
- Publication number 20170236905
- Publication date Aug 17, 2017
- Toyo Tanso Co., Ltd
- Satoshi Torimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUSCEPTOR AND METHOD FOR MANUFACTURING SAME
- Publication number 20170162425
- Publication date Jun 8, 2017
- TOYO TANSO CO., LTD.
- Masato Shinohara
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON CARBIDE-TANTALUM CARBIDE COMPOSITE AND SUSCEPTOR
- Publication number 20150321966
- Publication date Nov 12, 2015
- TOYO TANSO CO., LTD.
- Masato Shinohara
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES

Masato Shinohara

Person

Patents Grantslast 30 patents

Method for manufacturing reformed sic wafer, epitaxial layer-attach...

Heat treatment vessel for single-crystal silicon carbide substrate...

Surface treatment method for SiC substrate

Susceptor and method for manufacturing same

Etching method for SiC substrate and holding container

Silicon carbide-tantalum carbide composite and susceptor

Patents Applicationslast 30 patents

REFORMED SIC WAFER MANUFACTURING METHOD, EPITAXIAL LAYER-ATTACHED S...

HEAT TREATMENT VESSEL FOR SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE...

METHOD FOR MANUFACTURING THIN SiC WAFER AND THIN SiC WAFER

SURFACE TREATMENT METHOD FOR SiC SUBSTRATE

ETCHING METHOD FOR SIC SUBSTRATE AND HOLDING CONTAINER

METHOD FOR MANUFACTURING THIN SiC WAFER AND THIN SiC WAFER

SUSCEPTOR AND METHOD FOR MANUFACTURING SAME

SILICON CARBIDE-TANTALUM CARBIDE COMPOSITE AND SUSCEPTOR