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Masatoshi Kanaya
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Sagamihara, JP
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last 30 patents
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Patent Grant
SiC single crystal and method for growth thereof
Patent number
5,958,132
Issue date
Sep 28, 1999
Nippon Steel Corporation
Jun Takahashi
C30 - CRYSTAL GROWTH
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Patent Grant
Sublimation growth of single crystal SiC
Patent number
5,441,011
Issue date
Aug 15, 1995
Nippon Steel Corporation
Jun Takahaski
C30 - CRYSTAL GROWTH