Masatoshi Nishikawa

Person

Yokkaichi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional flat memory device including a dual dipole blocki...
- Patent number 11,631,691
- Issue date Apr 18, 2023
- SanDisk Technologies LLC
- Masatoshi Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonded die assembly using a face-to-back oxide bonding and methods...
- Patent number 11,587,943
- Issue date Feb 21, 2023
- SanDisk Technologies LLC
- Masatoshi Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-block size reduction for 3D non-volatile memory
- Patent number 11,404,122
- Issue date Aug 2, 2022
- SanDisk Technologies LLC
- Hardwell Chibvongodze
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device containing inter-select-gate electr...
- Patent number 11,222,954
- Issue date Jan 11, 2022
- SanDisk Technologies LLC
- Zhixin Cui
- G11 - INFORMATION STORAGE
Information Patent Grant
Double write/read throughput by CMOS adjacent array (CaA) NAND memory
- Patent number 11,189,335
- Issue date Nov 30, 2021
- SanDisk Technologies LLC
- Masatoshi Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including different height memory s...
- Patent number 11,094,715
- Issue date Aug 17, 2021
- SanDisk Technologies LLC
- Zhixin Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory array driven from both sides for performance im...
- Patent number 11,081,185
- Issue date Aug 3, 2021
- SanDisk Technologies LLC
- Hardwell Chibvongodze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional phase change memory device including vertically c...
- Patent number 11,043,537
- Issue date Jun 22, 2021
- Western Digital Technologies, Inc.
- Yuji Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parallel memory operations in multi-bonded memory device
- Patent number 11,024,385
- Issue date Jun 1, 2021
- SanDisk Technologies LLC
- Hardwell Chibvongodze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional flat NAND memory device having curved memory elem...
- Patent number 11,024,635
- Issue date Jun 1, 2021
- SanDisk Technologies LLC
- Zhixin Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device having enhanced contact between pol...
- Patent number 10,991,705
- Issue date Apr 27, 2021
- SanDisk Technologies LLC
- Masatoshi Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device having enhanced contact between pol...
- Patent number 10,991,706
- Issue date Apr 27, 2021
- SanDisk Technologies LLC
- Masatoshi Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including laterally constricted cur...
- Patent number 10,964,752
- Issue date Mar 30, 2021
- Western Digital Technologies, Inc.
- Yuji Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional flat NAND memory device having curved memory elem...
- Patent number 10,930,674
- Issue date Feb 23, 2021
- SanDisk Technologies LLC
- Zhixin Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-block size reduction for 3D non-volatile memory
- Patent number 10,878,907
- Issue date Dec 29, 2020
- SanDisk Technologies LLC
- Hardwell Chibvongodze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing bit line switches
- Patent number 10,854,619
- Issue date Dec 1, 2020
- SanDisk Technologies LLC
- Hardwell Chibvongodze
- G11 - INFORMATION STORAGE
Information Patent Grant
Bonded die assembly using a face-to-back oxide bonding and methods...
- Patent number 10,797,062
- Issue date Oct 6, 2020
- SanDisk Technologies LLC
- Masatoshi Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with locally modulated threshold vo...
- Patent number 10,756,106
- Issue date Aug 25, 2020
- SanDisk Technologies LLC
- Masatoshi Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing drain-select-level air g...
- Patent number 10,741,576
- Issue date Aug 11, 2020
- SanDisk Technologies LLC
- Masatoshi Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including different height memory s...
- Patent number 10,741,579
- Issue date Aug 11, 2020
- SanDisk Technologies LLC
- Zhixin Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonded assembly containing multiple memory dies sharing peripheral...
- Patent number 10,741,535
- Issue date Aug 11, 2020
- SanDisk Technologies LLC
- Masatoshi Nishikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device containing bit line switches
- Patent number 10,734,080
- Issue date Aug 4, 2020
- SanDisk Technologies LLC
- Hardwell Chibvongodze
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional flat memory device including a dual dipole blocki...
- Patent number 10,720,444
- Issue date Jul 21, 2020
- SanDisk Technologies LLC
- Masatoshi Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional flat NAND memory device having curved memory elem...
- Patent number 10,700,078
- Issue date Jun 30, 2020
- SanDisk Technologies LLC
- Zhixin Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional flat NAND memory device having curved memory elem...
- Patent number 10,700,090
- Issue date Jun 30, 2020
- SanDisk Technologies LLC
- Zhixin Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing capacitor pillars and me...
- Patent number 10,629,675
- Issue date Apr 21, 2020
- SanDisk Technologies LLC
- Masatoshi Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including three-dimensional bit lin...
- Patent number 10,622,367
- Issue date Apr 14, 2020
- SanDisk Technologies LLC
- Masatoshi Nishikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device containing multilevel drain select...
- Patent number 10,600,800
- Issue date Mar 24, 2020
- SanDisk Technologies LLC
- Masatoshi Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing dummy antenna diodes
- Patent number 10,580,787
- Issue date Mar 3, 2020
- SanDisk Technologies LLC
- Masatoshi Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing source contact to bottom...
- Patent number 10,559,582
- Issue date Feb 11, 2020
- SanDisk Technologies LLC
- Masatoshi Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING INTER-SELECT-GATE ELECTR...
- Publication number 20210305384
- Publication date Sep 30, 2021
- SANDISK TECHNOLOGIES LLC
- Zhixin CUI
- G11 - INFORMATION STORAGE
Information Patent Application
DOUBLE WRITE/READ THROUGHPUT BY CAA NAND
- Publication number 20210142841
- Publication date May 13, 2021
- SANDISK TECHNOLOGIES LLC
- Masatoshi Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-BLOCK SIZE REDUCTION FOR 3D NON-VOLATILE MEMORY
- Publication number 20210082506
- Publication date Mar 18, 2021
- SANDISK TECHNOLOGIES LLC
- Hardwell CHIBVONGODZE
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE HAVING ENHANCED CONTACT BETWEEN POL...
- Publication number 20210035998
- Publication date Feb 4, 2021
- SANDISK TECHNOLOGIES LLC
- Masatoshi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE HAVING ENHANCED CONTACT BETWEEN POL...
- Publication number 20210035999
- Publication date Feb 4, 2021
- SANDISK TECHNOLOGIES LLC
- Masatoshi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDED DIE ASSEMBLY USING A FACE-TO-BACK OXIDE BONDING AND METHODS...
- Publication number 20200402990
- Publication date Dec 24, 2020
- SANDISK TECHNOLOGIES LLC
- Masatoshi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY ARRAY DRIVEN FROM BOTH SIDES FOR PERFORMANCE IM...
- Publication number 20200402587
- Publication date Dec 24, 2020
- SANDISK TECHNOLOGIES LLC
- Hardwell CHIBVONGODZE
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING LATERALLY CONSTRICTED CUR...
- Publication number 20200395408
- Publication date Dec 17, 2020
- Western Digital Technologies, Inc.
- Yuji TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL PHASE CHANGE MEMORY DEVICE INCLUDING VERTICALLY C...
- Publication number 20200395407
- Publication date Dec 17, 2020
- Western Digital Technologies, Inc.
- Yuji TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-BLOCK SIZE REDUCTION FOR 3D NON-VOLATILE MEMORY
- Publication number 20200388335
- Publication date Dec 10, 2020
- SANDISK TECHNOLOGIES LLC
- Hardwell CHIBVONGODZE
- G11 - INFORMATION STORAGE
Information Patent Application
PARALLEL MEMORY OPERATIONS IN MULTI-BONDED MEMORY DEVICE
- Publication number 20200365210
- Publication date Nov 19, 2020
- SANDISK TECHNOLOGIES LLC
- Hardwell CHIBVONGODZE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDED DIE ASSEMBLY USING A FACE-TO-BACK OXIDE BONDING AND METHODS...
- Publication number 20200335512
- Publication date Oct 22, 2020
- SANDISK TECHNOLOGIES LLC
- Masatoshi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING DIFFERENT HEIGHT MEMORY S...
- Publication number 20200335518
- Publication date Oct 22, 2020
- SANDISK TECHNOLOGIES LLC
- Zhixin CUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL FLAT NAND MEMORY DEVICE HAVING CURVED MEMORY ELEM...
- Publication number 20200286903
- Publication date Sep 10, 2020
- SANDISK TECHNOLOGIES LLC
- Zhixin Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL FLAT NAND MEMORY DEVICE HAVING CURVED MEMORY ELEM...
- Publication number 20200286915
- Publication date Sep 10, 2020
- SANDISK TECHNOLOGIES LLC
- Zhixin Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL FLAT MEMORY DEVICE INCLUDING A DUAL DIPOLE BLOCKI...
- Publication number 20200279866
- Publication date Sep 3, 2020
- SANDISK TECHNOLOGIES LLC
- Masatoshi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDED ASSEMBLY CONTAINING MULTIPLE MEMORY DIES SHARING PERIPHERAL...
- Publication number 20200266182
- Publication date Aug 20, 2020
- SANDISK TECHNOLOGIES LLC
- Masatoshi NISHIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING BIT LINE SWITCHES
- Publication number 20200185397
- Publication date Jun 11, 2020
- SANDISK TECHNOLOGIES LLC
- Hardwell Chibvongodze
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING DIFFERENT HEIGHT MEMORY S...
- Publication number 20200185405
- Publication date Jun 11, 2020
- SANDISK TECHNOLOGIES LLC
- Zhixin CUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING BIT LINE SWITCHES
- Publication number 20200185039
- Publication date Jun 11, 2020
- SANDISK TECHNOLOGIES LLC
- Hardwell Chibvongodze
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH LOCALLY MODULATED THRESHOLD VO...
- Publication number 20200168623
- Publication date May 28, 2020
- SANDISK TECHNOLOGIES LLC
- Masatoshi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING THREE-DIMENSIONAL BIT LIN...
- Publication number 20200098771
- Publication date Mar 26, 2020
- SANDISK TECHNOLOGIES LLC
- Masatoshi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING DRAIN-SELCT-LEVEL AIR GA...
- Publication number 20200058673
- Publication date Feb 20, 2020
- SANDISK TECHNOLOGIES LLC
- Masatoshi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL FLAT MEMORY DEVICE INCLUDING A DUAL DIPOLE BLOCKI...
- Publication number 20200058672
- Publication date Feb 20, 2020
- SANDISK TECHNOLOGIES LLC
- Masatoshi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING MULTILEVEL DRAIN SELECT...
- Publication number 20200006358
- Publication date Jan 2, 2020
- SANDISK TECHNOLOGIES LLC
- Masatoshi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL NAND MEMORY CONTAINING DUAL PROTRUSION CHARGE TRA...
- Publication number 20190386108
- Publication date Dec 19, 2019
- SANDISK TECHNOLOGIES LLC
- Masatoshi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ANTENNA DIODES AND METHO...
- Publication number 20190371800
- Publication date Dec 5, 2019
- SANDISK TECHNOLOGIES LLC
- Masatoshi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING SOURCE CONTACT TO BOTTOM...
- Publication number 20190371807
- Publication date Dec 5, 2019
- SANDISK TECHNOLOGIES LLC
- Masatoshi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING HYDROGEN DIFFUSION BLOCK...
- Publication number 20190355663
- Publication date Nov 21, 2019
- SanDisk Technologies LLC
- Masatoshi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Resistor In 3D Memory Device With Two-Tier Stack
- Publication number 20170263642
- Publication date Sep 14, 2017
- SanDisk Technologies LLC
- Masatoshi Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS

Masatoshi Nishikawa

Person

Patents Grantslast 30 patents

Three-dimensional flat memory device including a dual dipole blocki...

Bonded die assembly using a face-to-back oxide bonding and methods...

Sub-block size reduction for 3D non-volatile memory

Three-dimensional memory device containing inter-select-gate electr...

Double write/read throughput by CMOS adjacent array (CaA) NAND memory

Three-dimensional memory device including different height memory s...

Non-volatile memory array driven from both sides for performance im...

Three-dimensional phase change memory device including vertically c...

Parallel memory operations in multi-bonded memory device

Three-dimensional flat NAND memory device having curved memory elem...

Three-dimensional memory device having enhanced contact between pol...

Three-dimensional memory device having enhanced contact between pol...

Three-dimensional memory device including laterally constricted cur...

Three-dimensional flat NAND memory device having curved memory elem...

Sub-block size reduction for 3D non-volatile memory

Three-dimensional memory device containing bit line switches

Bonded die assembly using a face-to-back oxide bonding and methods...

Three-dimensional memory device with locally modulated threshold vo...

Three-dimensional memory device containing drain-select-level air g...

Three-dimensional memory device including different height memory s...

Bonded assembly containing multiple memory dies sharing peripheral...

Three-dimensional memory device containing bit line switches

Three-dimensional flat memory device including a dual dipole blocki...

Three-dimensional flat NAND memory device having curved memory elem...

Three-dimensional flat NAND memory device having curved memory elem...

Three-dimensional memory device containing capacitor pillars and me...

Three-dimensional memory device including three-dimensional bit lin...

Three-dimensional memory device containing multilevel drain select...

Three-dimensional memory device containing dummy antenna diodes

Three-dimensional memory device containing source contact to bottom...

Patents Applicationslast 30 patents

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING INTER-SELECT-GATE ELECTR...

DOUBLE WRITE/READ THROUGHPUT BY CAA NAND

SUB-BLOCK SIZE REDUCTION FOR 3D NON-VOLATILE MEMORY

THREE-DIMENSIONAL MEMORY DEVICE HAVING ENHANCED CONTACT BETWEEN POL...

THREE-DIMENSIONAL MEMORY DEVICE HAVING ENHANCED CONTACT BETWEEN POL...

BONDED DIE ASSEMBLY USING A FACE-TO-BACK OXIDE BONDING AND METHODS...

NON-VOLATILE MEMORY ARRAY DRIVEN FROM BOTH SIDES FOR PERFORMANCE IM...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING LATERALLY CONSTRICTED CUR...

THREE-DIMENSIONAL PHASE CHANGE MEMORY DEVICE INCLUDING VERTICALLY C...

SUB-BLOCK SIZE REDUCTION FOR 3D NON-VOLATILE MEMORY

PARALLEL MEMORY OPERATIONS IN MULTI-BONDED MEMORY DEVICE

BONDED DIE ASSEMBLY USING A FACE-TO-BACK OXIDE BONDING AND METHODS...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING DIFFERENT HEIGHT MEMORY S...

THREE-DIMENSIONAL FLAT NAND MEMORY DEVICE HAVING CURVED MEMORY ELEM...

THREE-DIMENSIONAL FLAT NAND MEMORY DEVICE HAVING CURVED MEMORY ELEM...

THREE-DIMENSIONAL FLAT MEMORY DEVICE INCLUDING A DUAL DIPOLE BLOCKI...

BONDED ASSEMBLY CONTAINING MULTIPLE MEMORY DIES SHARING PERIPHERAL...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING BIT LINE SWITCHES

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING DIFFERENT HEIGHT MEMORY S...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING BIT LINE SWITCHES

THREE-DIMENSIONAL MEMORY DEVICE WITH LOCALLY MODULATED THRESHOLD VO...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING THREE-DIMENSIONAL BIT LIN...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING DRAIN-SELCT-LEVEL AIR GA...

THREE-DIMENSIONAL FLAT MEMORY DEVICE INCLUDING A DUAL DIPOLE BLOCKI...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING MULTILEVEL DRAIN SELECT...

THREE-DIMENSIONAL NAND MEMORY CONTAINING DUAL PROTRUSION CHARGE TRA...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ANTENNA DIODES AND METHO...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING SOURCE CONTACT TO BOTTOM...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING HYDROGEN DIFFUSION BLOCK...

Vertical Resistor In 3D Memory Device With Two-Tier Stack