Masatoshi Taya

Person

Hyogo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing semiconductor element
- Patent number 11,398,411
- Issue date Jul 26, 2022
- NEXCHIP SEMICONDUCTOR CO., LTD.
- Masatoshi Taya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,373,862
- Issue date Aug 6, 2019
- Synaptics Japan GK
- Masatoshi Taya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device
- Patent number 9,269,707
- Issue date Feb 23, 2016
- SYNAPTICS DISPLAY DEVICES GK
- Masatoshi Taya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a Schottky barrier diode
- Patent number 8,860,169
- Issue date Oct 14, 2014
- Renesas Electronics Corporation
- Kunihiko Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a Schottky barrier diode
- Patent number 8,604,583
- Issue date Dec 10, 2013
- Renesas Electronics Corporation
- Kunihiko Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device and a method of manufacturi...
- Patent number 8,546,905
- Issue date Oct 1, 2013
- Renesas Electronics Corporation
- Kunihiko Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device and a method of manufacturi...
- Patent number 8,222,712
- Issue date Jul 17, 2012
- Renesas Electronics Corporation
- Kunihiko Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a schottky barrier diode
- Patent number 8,169,047
- Issue date May 1, 2012
- Renesas Electronics Corporation
- Kunihiko Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device
- Patent number 8,067,807
- Issue date Nov 29, 2011
- Renesas Electronics Corporation
- Masatoshi Taya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a high-breakdown voltage MOS transistor
- Patent number 7,777,294
- Issue date Aug 17, 2010
- Renesas Technology Corp.
- Masatoshi Taya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a high-breakdown voltage MOS transistor
- Patent number 7,002,210
- Issue date Feb 21, 2006
- Renesas Technology Corp.
- Masatoshi Taya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having improved trench structure
- Patent number 6,777,772
- Issue date Aug 17, 2004
- Renesas Technology Corp.
- Masatoshi Taya
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
- Publication number 20210398860
- Publication date Dec 23, 2021
- NEXCHIP SEMICONDUCTOR CO., LTD.
- MASATOSHI TAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE TOLERANT SEMICONDUCTOR ELEMENT
- Publication number 20210020630
- Publication date Jan 21, 2021
- NEXCHIP SEMICONDUCTOR CO., LTD.
- MASATOSHI TAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20170032999
- Publication date Feb 2, 2017
- Synaptics Japan GK
- Masatoshi TAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
- Publication number 20150162323
- Publication date Jun 11, 2015
- Synaptics Display Devices KK
- Masatoshi TAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING A SCHOTTKY BARRIER DIODE
- Publication number 20140061847
- Publication date Mar 6, 2014
- RENESAS ELECTRONICS CORPORATION
- Kunihiko KATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Integrated Circuit Device and A Method of Manufacturi...
- Publication number 20120326262
- Publication date Dec 27, 2012
- Renesas Electronics Corporation
- Kunihiko KATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising A Schottky Barrier Diode
- Publication number 20120187520
- Publication date Jul 26, 2012
- Renesas Electronics Corporation
- Kunihiko KATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
- Publication number 20100052073
- Publication date Mar 4, 2010
- RENESAS TECHNOLOGY CORP.
- Masatoshi TAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND A METHOD OF MANUFACTURI...
- Publication number 20090243027
- Publication date Oct 1, 2009
- RENESAS TECHNOLOGY CORP.
- Kunihiko KATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
- Publication number 20090065888
- Publication date Mar 12, 2009
- RENESAS TECHNOLOGY CORP.
- KUNIHIKO KATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including a high-breakdown voltage MOS transistor
- Publication number 20060027880
- Publication date Feb 9, 2006
- Renesas Technology Corp.
- Masatoshi Taya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20040159859
- Publication date Aug 19, 2004
- RENESAS TECHNOLOGY CORP.
- Masatoshi Taya
- H01 - BASIC ELECTRIC ELEMENTS

Masatoshi Taya

Person

Patents Grantslast 30 patents

Method for manufacturing semiconductor element

Semiconductor device

Semiconductor integrated circuit device

Semiconductor device comprising a Schottky barrier diode

Semiconductor device comprising a Schottky barrier diode

Semiconductor integrated circuit device and a method of manufacturi...

Semiconductor integrated circuit device and a method of manufacturi...

Semiconductor device comprising a schottky barrier diode

Semiconductor integrated circuit device

Semiconductor device including a high-breakdown voltage MOS transistor

Semiconductor device including a high-breakdown voltage MOS transistor

Semiconductor device having improved trench structure

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT

HIGH-VOLTAGE TOLERANT SEMICONDUCTOR ELEMENT

SEMICONDUCTOR DEVICE

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

SEMICONDUCTOR DEVICE COMPRISING A SCHOTTKY BARRIER DIODE

Semiconductor Integrated Circuit Device and A Method of Manufacturi...

Semiconductor Device Comprising A Schottky Barrier Diode

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND A METHOD OF MANUFACTURI...

SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME

Semiconductor device including a high-breakdown voltage MOS transistor

Semiconductor device