Masatoshi Yoshikawa

Person

Yokohama-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic memory device
- Patent number 12,170,106
- Issue date Dec 17, 2024
- Kioxia Corporation
- Yoshiaki Asao
- G11 - INFORMATION STORAGE
Information Patent Grant
Selector device and semiconductor storage device
- Patent number 12,144,267
- Issue date Nov 12, 2024
- Kioxia Corporation
- Jieqiong Zhang
Information Patent Grant
Semiconductor device
- Patent number 12,033,718
- Issue date Jul 9, 2024
- Kioxia Corporation
- Kensuke Ota
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistance variable device with chalcogen-containing layer
- Patent number 11,600,772
- Issue date Mar 7, 2023
- Kioxia Corporation
- Hiroki Kawai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,895,162
- Issue date Nov 25, 2014
- Kabushiki Kaisha Toshiba
- Katsuya Nishiyama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,754,433
- Issue date Jun 17, 2014
- Kabushiki Kaisha Toshiba
- Yukiteru Matsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 8,741,161
- Issue date Jun 3, 2014
- Kabushiki Kaisha Toshiba
- Yasuyuki Sonoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element and method of manufacturing the same
- Patent number 8,716,818
- Issue date May 6, 2014
- Kabushiki Kaisha Toshiba
- Masatoshi Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,686,521
- Issue date Apr 1, 2014
- Kabushiki Kaisha Toshiba
- Tadaomi Daibou
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,665,639
- Issue date Mar 4, 2014
- Kabushiki Kaisha Toshiba
- Toshihiko Nagase
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic memory
- Patent number 8,531,875
- Issue date Sep 10, 2013
- Kabushiki Kaisha Toshiba
- Satoshi Yanagi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive element
- Patent number 8,363,462
- Issue date Jan 29, 2013
- Kabushiki Kaisha Toshiba
- Toshihiko Nagase
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,299,552
- Issue date Oct 30, 2012
- Kabushiki Kaisha Toshiba
- Toshihiko Nagase
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive effect device and magnetic memory
- Patent number 8,223,533
- Issue date Jul 17, 2012
- Kabushiki Kaisha Toshiba
- Jyunichi Ozeki
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,218,355
- Issue date Jul 10, 2012
- Kabushiki Kaisha Toshiba
- Eiji Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,208,292
- Issue date Jun 26, 2012
- Kabushiki Kaisha Toshiba
- Tadashi Kai
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,173,447
- Issue date May 8, 2012
- Kabushiki Kaisha Toshiba
- Tomomasa Ueda
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetoresistive random access memory...
- Patent number 8,154,915
- Issue date Apr 10, 2012
- Kabushiki Kaisha Toshiba
- Masatoshi Yoshikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element
- Patent number 8,143,684
- Issue date Mar 27, 2012
- Kabushiki Kaisha Toshiba
- Makoto Nagamine
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetoresistive random access memory...
- Patent number 8,139,405
- Issue date Mar 20, 2012
- Kabushiki Kaisha Toshiba
- Masatoshi Yoshikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,107,281
- Issue date Jan 31, 2012
- Kabushiki Kaisha Toshiba
- Tadashi Kai
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,098,514
- Issue date Jan 17, 2012
- Kabushiki Kaisha Toshiba
- Toshihiko Nagase
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Magnetoresistance effect element having resistance adjusting layer...
- Patent number 8,085,511
- Issue date Dec 27, 2011
- Kabushiki Kaisha Toshiba
- Hiromi Yuasa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic memory element, magnetic memory having said magnetic memor...
- Patent number 7,965,544
- Issue date Jun 21, 2011
- Kabushiki Kaisha Toshiba
- Eiji Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetoresistive random access memory...
- Patent number 7,957,184
- Issue date Jun 7, 2011
- Kabushiki Kaisha Toshiba
- Masatoshi Yoshikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and magnetoresistive random access...
- Patent number 7,924,607
- Issue date Apr 12, 2011
- Kabushiki Kaisha Toshiba
- Masatoshi Yoshikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element with intermediate oxide layer conta...
- Patent number 7,920,361
- Issue date Apr 5, 2011
- Kabushiki Kaisha Toshiba
- Masatoshi Yoshikawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive effect element with resistance adjustment layer of...
- Patent number 7,898,774
- Issue date Mar 1, 2011
- Kabushiki Kaisha Toshiba
- Hiromi Yuasa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive device, magnetoresistive head and magnetic recordi...
- Patent number 7,897,274
- Issue date Mar 1, 2011
- Kabushiki Kaisha Toshiba
- Hiromi Yuasa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive element
- Patent number 7,898,846
- Issue date Mar 1, 2011
- Kabushiki Kaisha Toshiba
- Makoto Nagamine
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20240324241
- Publication date Sep 26, 2024
- KIOXIA Corporation
- Masatoshi YOSHIKAWA
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20240079039
- Publication date Mar 7, 2024
- KIOXIA Corporation
- Masatoshi YOSHIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY
- Publication number 20240049475
- Publication date Feb 8, 2024
- KIOXIA Corporation
- Yoshihiro UEDA
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230298643
- Publication date Sep 21, 2023
- KIOXIA Corporation
- Kensuke OTA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20230189662
- Publication date Jun 15, 2023
- KIOXIA Corporation
- Masatoshi YOSHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20230082665
- Publication date Mar 16, 2023
- KIOXIA Corporation
- Masatoshi YOSHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20230069841
- Publication date Mar 9, 2023
- KIOXIA Corporation
- Yoshiaki ASAO
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTOR DEVICE AND SEMICONDUCTOR STORAGE DEVICE
- Publication number 20220302383
- Publication date Sep 22, 2022
- KIOXIA Corporation
- Jieqiong ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTANCE VARIABLE DEVICE
- Publication number 20210202838
- Publication date Jul 1, 2021
- KIOXIA Corporation
- Hiroki KAWAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20130095656
- Publication date Apr 18, 2013
- Kabushiki Kaisha Toshiba
- Yukiteru Matsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME
- Publication number 20130001652
- Publication date Jan 3, 2013
- Masatoshi Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20130005148
- Publication date Jan 3, 2013
- Yasuyuki Sonoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY
- Publication number 20120230091
- Publication date Sep 13, 2012
- Satoshi YANAGI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20120163070
- Publication date Jun 28, 2012
- Toshihiko Nagase
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20120099369
- Publication date Apr 26, 2012
- Tadashi Kai
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20120088125
- Publication date Apr 12, 2012
- NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY
- Katsuya NISHIYAMA
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTIVE ELEMENT
- Publication number 20120008381
- Publication date Jan 12, 2012
- Toshihiko Nagase
- G01 - MEASURING TESTING
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20110294291
- Publication date Dec 1, 2011
- Kabushiki Kaisha Toshiba
- Yukiteru Matsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY...
- Publication number 20110222335
- Publication date Sep 15, 2011
- Kabushiki Kaisha Toshiba
- Masatoshi YOSHIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY...
- Publication number 20110211389
- Publication date Sep 1, 2011
- Kabushiki Kaisha Toshiba
- Masatoshi YOSHIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT
- Publication number 20110116305
- Publication date May 19, 2011
- Makoto Nagamine
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20110073970
- Publication date Mar 31, 2011
- Tadashi Kai
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20100315864
- Publication date Dec 16, 2010
- KABUSHIKI KAISHA TOSHIBA
- Tomomasa UEDA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY HAVING SAID MAGNETIC MEMOR...
- Publication number 20100290270
- Publication date Nov 18, 2010
- Kabushiki Kaisha Toshiba
- Eiji KITAGAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20100244163
- Publication date Sep 30, 2010
- Tadaomi Daibou
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY...
- Publication number 20100230770
- Publication date Sep 16, 2010
- Kabushiki Kaisha Toshiba
- Masatoshi YOSHIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT
- Publication number 20100118600
- Publication date May 13, 2010
- Toshihiko Nagase
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTIVE EFFECT DEVICE AND MAGNETIC MEMORY
- Publication number 20100080050
- Publication date Apr 1, 2010
- Kabushiki Kaisha Toshiba
- Jyunichi OZEKI
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTANCE-CHANGE MEMORY HAVING RESISTANCE-CHANGE ELEMENT AND MANUF...
- Publication number 20100078763
- Publication date Apr 1, 2010
- Kabushiki Kaisha Toshiba
- Keiji HOSOTANI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD AND MAGNETIC RECORD...
- Publication number 20090269618
- Publication date Oct 29, 2009
- KABUSHIKI KAISHA TOSHIBA
- Yuuzo Kamiguchi
- G01 - MEASURING TESTING

Masatoshi Yoshikawa

Person

Patents Grantslast 30 patents

Magnetic memory device

Selector device and semiconductor storage device

Semiconductor device

Resistance variable device with chalcogen-containing layer

Magnetoresistive element and magnetic memory

Semiconductor device and method of manufacturing the same

Method of manufacturing semiconductor device

Magnetoresistive element and method of manufacturing the same

Magnetoresistive element and magnetic memory

Magnetoresistive element and magnetic memory

Magnetic memory

Magnetoresistive element

Magnetoresistive element and magnetic memory

Magnetoresistive effect device and magnetic memory

Magnetoresistive element and magnetic memory

Magnetoresistive element and magnetic memory

Magnetoresistive element and magnetic memory

Magnetoresistive element and magnetoresistive random access memory...

Magnetoresistive element

Magnetoresistive element and magnetoresistive random access memory...

Magnetoresistive element and magnetic memory

Magnetoresistive element and magnetic memory

Magnetoresistance effect element having resistance adjusting layer...

Magnetic memory element, magnetic memory having said magnetic memor...

Magnetoresistive element and magnetoresistive random access memory...

Magnetoresistance effect element and magnetoresistive random access...

Magnetoresistive effect element with intermediate oxide layer conta...

Magnetoresistive effect element with resistance adjustment layer of...

Magnetoresistive device, magnetoresistive head and magnetic recordi...

Magnetoresistive element

Patents Applicationslast 30 patents

MAGNETIC MEMORY DEVICE

MAGNETIC MEMORY DEVICE

MAGNETIC MEMORY

SEMICONDUCTOR DEVICE

MAGNETIC MEMORY DEVICE

MAGNETIC MEMORY DEVICE

MAGNETIC MEMORY DEVICE

SELECTOR DEVICE AND SEMICONDUCTOR STORAGE DEVICE

RESISTANCE VARIABLE DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY...

MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY...

MAGNETORESISTIVE ELEMENT

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY HAVING SAID MAGNETIC MEMOR...

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY...

MAGNETORESISTIVE ELEMENT

MAGNETORESISTIVE EFFECT DEVICE AND MAGNETIC MEMORY

RESISTANCE-CHANGE MEMORY HAVING RESISTANCE-CHANGE ELEMENT AND MANUF...

MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD AND MAGNETIC RECORD...