Masayoshi DOI

Person

Nagoya-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
SiC single crystal production method and production apparatus
- Patent number 10,968,535
- Issue date Apr 6, 2021
- Toyota Jidosha Kabushiki Kaisha
- Masayoshi Doi
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal production method and production apparatus
- Patent number 10,640,885
- Issue date May 5, 2020
- Toyota Jidosha Kabushiki Kaisha
- Masayoshi Doi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing SiC single crystal
- Patent number 10,145,025
- Issue date Dec 4, 2018
- Toyota Jidosha Kabushiki Kaisha
- Kazuaki Seki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing SiC single crystal
- Patent number 10,119,199
- Issue date Nov 6, 2018
- Toyota Jidosha Kabushiki Kaisha
- Kazuaki Seki
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SIC SINGLE CRYSTAL PRODUCTION METHOD AND PRODUCTION APPARATUS
- Publication number 20180312996
- Publication date Nov 1, 2018
- Toyota Jidosha Kabushiki Kaisha
- Masayoshi DOI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
- Publication number 20180112328
- Publication date Apr 26, 2018
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuaki SEKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
- Publication number 20180112329
- Publication date Apr 26, 2018
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuaki SEKI
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL BY SOLUTION GROWTH PROCE...
- Publication number 20170306522
- Publication date Oct 26, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuhito KAMEI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL AND APPARATUS FOR PRODUCING...
- Publication number 20170298533
- Publication date Oct 19, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuhiko KUSUNOKI
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR MANUFACTURING SiC SINGLE CRYSTAL AND METHOD OF MANUFA...
- Publication number 20170226658
- Publication date Aug 10, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Yutaka KISHIDA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SIC SINGLE CRYSTAL
- Publication number 20160090664
- Publication date Mar 31, 2016
- Toyota Jidosha Kabushiki Kaisha
- Katsunori DANNO
- C30 - CRYSTAL GROWTH

Masayoshi DOI

Person

Patents Grantslast 30 patents

SiC single crystal production method and production apparatus

SiC single crystal production method and production apparatus

Method for producing SiC single crystal

Method for producing SiC single crystal

Patents Applicationslast 30 patents

SIC SINGLE CRYSTAL PRODUCTION METHOD AND PRODUCTION APPARATUS

METHOD FOR PRODUCING SiC SINGLE CRYSTAL

METHOD FOR PRODUCING SiC SINGLE CRYSTAL

APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL BY SOLUTION GROWTH PROCE...

METHOD FOR PRODUCING SiC SINGLE CRYSTAL AND APPARATUS FOR PRODUCING...

APPARATUS FOR MANUFACTURING SiC SINGLE CRYSTAL AND METHOD OF MANUFA...

METHOD FOR PRODUCING SIC SINGLE CRYSTAL