Masayoshi IWAYAMA

Person

Kawasaki-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor storage device and method of manufacturing the same
- Patent number 9,276,039
- Issue date Mar 1, 2016
- Kabushiki Kaisha Toshiba
- Masayoshi Iwayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistance change type memory and manufacturing method thereof
- Patent number 8,902,634
- Issue date Dec 2, 2014
- Kabushiki Kaisha Toshiba
- Masayoshi Iwayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,754,433
- Issue date Jun 17, 2014
- Kabushiki Kaisha Toshiba
- Yukiteru Matsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element including upper electrode having hexagonal...
- Patent number 8,339,841
- Issue date Dec 25, 2012
- Kabushiki Kaisha Toshiba
- Masayoshi Iwayama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 8,314,464
- Issue date Nov 20, 2012
- Kabushiki Kaisha Toshiba
- Masayoshi Iwayama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 8,309,950
- Issue date Nov 13, 2012
- Kabushiki Kaisha Toshiba
- Masayoshi Iwayama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing a magnetic random access memory, method of...
- Patent number 8,058,080
- Issue date Nov 15, 2011
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device and method of manufacturing the same
- Patent number 7,999,246
- Issue date Aug 16, 2011
- Kabushiki Kaisha Toshiba
- Masayoshi Iwayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element and manufacturing method thereof
- Patent number 7,919,826
- Issue date Apr 5, 2011
- Kabushiki Kaisha Toshiba
- Masayoshi Iwayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element and method of manufacturing the same
- Patent number 7,727,778
- Issue date Jun 1, 2010
- Kabushiki Kaisha Toshiba
- Masayoshi Iwayama
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20140124883
- Publication date May 8, 2014
- Kabushiki Kaisha Toshiba
- Masayoshi IWAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTANCE CHANGE TYPE MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20140070162
- Publication date Mar 13, 2014
- Masayoshi IWAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20130095656
- Publication date Apr 18, 2013
- Kabushiki Kaisha Toshiba
- Yukiteru Matsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120273844
- Publication date Nov 1, 2012
- Kabushiki Kaisha Toshiba
- Masayoshi IWAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20120056253
- Publication date Mar 8, 2012
- Kabushiki Kaisha Toshiba
- Masayoshi IWAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20110294291
- Publication date Dec 1, 2011
- Kabushiki Kaisha Toshiba
- Yukiteru Matsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20110254112
- Publication date Oct 20, 2011
- Kabushiki Kaisha Toshiba
- Takaya YAMANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY HAVING MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20110180861
- Publication date Jul 28, 2011
- Kabushiki Kaisha Toshiba
- Masayoshi IWAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20110062421
- Publication date Mar 17, 2011
- Kabushiki Kaisha Toshiba
- Masayoshi Iwayama
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20110062417
- Publication date Mar 17, 2011
- Kabushiki Kaisha Toshiba
- Masayoshi Iwayama
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME
- Publication number 20100200900
- Publication date Aug 12, 2010
- Kabushiki Kaisha Toshiba
- Masayoshi Iwayama
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MANUFACTURING A MAGNETIC RANDOM ACCESS MEMORY, METHOD OF...
- Publication number 20100197044
- Publication date Aug 5, 2010
- Kabushiki Kaisha Toshiba
- Takeshi KAJIYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME
- Publication number 20100053823
- Publication date Mar 4, 2010
- Masayoshi Iwayama
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING T...
- Publication number 20080277703
- Publication date Nov 13, 2008
- Masayoshi Iwayama
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MANUFACTURING METHOD THEREOF
- Publication number 20080265347
- Publication date Oct 30, 2008
- Masayoshi Iwayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20080224117
- Publication date Sep 18, 2008
- Masayoshi IWAYAMA
- H01 - BASIC ELECTRIC ELEMENTS

Masayoshi IWAYAMA

Person

Patents Grantslast 30 patents

Semiconductor storage device and method of manufacturing the same

Resistance change type memory and manufacturing method thereof

Semiconductor device and method of manufacturing the same

Magnetoresistive element including upper electrode having hexagonal...

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Method of manufacturing a magnetic random access memory, method of...

Semiconductor memory device and method of manufacturing the same

Magnetoresistive element and manufacturing method thereof

Magnetoresistive element and method of manufacturing the same

Patents Applicationslast 30 patents

SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME

RESISTANCE CHANGE TYPE MEMORY AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

MAGNETIC RANDOM ACCESS MEMORY HAVING MAGNETORESISTIVE EFFECT ELEMENT

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME

METHOD OF MANUFACTURING A MAGNETIC RANDOM ACCESS MEMORY, METHOD OF...

MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME

MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING T...

MAGNETORESISTIVE ELEMENT AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME