Masayoshi Yoshimura

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Tokyo, JA

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Patents Grantslast 30 patents

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Single in-line high power resin-packaged semiconductor device havin...
- Patent number 4,095,253
- Issue date Jun 13, 1978
- Hitachi, Ltd.
- Masayoshi Yoshimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching method for flattening a silicon substrate utilizing an anis...
- Patent number 4,056,413
- Issue date Nov 1, 1977
- Hitachi, Ltd.
- Masayoshi Yoshimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with base/emitter encirclement configuration
- Patent number 4,024,568
- Issue date May 17, 1977
- Hitachi, Ltd.
- Masayoshi Yoshimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor circuit for deep saturation prevention
- Patent number 4,021,687
- Issue date May 3, 1977
- Hitachi, Ltd.
- Masayoshi Yoshimura
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Resistance element for semiconductor integrated circuit
- Patent number 3,990,092
- Issue date Nov 2, 1976
- Hitachi, Ltd.
- Masayoshi Yoshimura
- H01 - BASIC ELECTRIC ELEMENTS