Masayuki Sakai

Person

Itami, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including plated heat sink and airbridge for h...
- Patent number 5,864,169
- Issue date Jan 26, 1999
- Mitsubishi Denki Kabushiki Kaisha
- Teruyuki Shimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making bipolar transistor
- Patent number 5,739,062
- Issue date Apr 14, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Naohito Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor
- Patent number 5,698,871
- Issue date Dec 16, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Masayuki Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a field effect transistor with a T-shaped g...
- Patent number 5,358,885
- Issue date Oct 25, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Tomoki Oku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor device using electron cyclotron...
- Patent number 5,322,806
- Issue date Jun 21, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Yasutaka Kohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production method of T-shaped gate electrode in semiconductor device
- Patent number 5,304,511
- Issue date Apr 19, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Masayuki Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing an asymmetrically doped LDD MESFET
- Patent number 5,001,077
- Issue date Mar 19, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Masayuki Sakai
- H01 - BASIC ELECTRIC ELEMENTS

Masayuki Sakai

Person

Patents Grantslast 30 patents

Semiconductor device including plated heat sink and airbridge for h...

Method of making bipolar transistor

Heterojunction bipolar transistor

Method of manufacturing a field effect transistor with a T-shaped g...

Method of producing a semiconductor device using electron cyclotron...

Production method of T-shaped gate electrode in semiconductor device

Method of producing an asymmetrically doped LDD MESFET