Massimo V. Fischetti

Person

Putnam Valley, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Higher performance CMOS on (110) wafers
- Patent number 7,968,946
- Issue date Jun 28, 2011
- International Business Machines Corporation
- Massimo V. Fischetti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement of electron and hole mobilities in <110> Si under biaxi...
- Patent number 7,943,486
- Issue date May 17, 2011
- International Business Machines Corporation
- Victor Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement of electron and hole mobilities in <110> Si under biaxi...
- Patent number 7,462,525
- Issue date Dec 9, 2008
- International Business Machines Corporation
- Victor Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement of electron and hole mobilities in <110> Si under biaxi...
- Patent number 7,314,790
- Issue date Jan 1, 2008
- International Business Machines Corporation
- Victor Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement of electron and hole mobilities in <110> Si under biaxi...
- Patent number 7,161,169
- Issue date Jan 9, 2007
- International Business Machines Corporation
- Victor Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium field effect transistor and method of fabricating the same
- Patent number 6,864,520
- Issue date Mar 8, 2005
- International Business Machines Corporation
- Massimo V. Fischetti
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGHER PERFORMANCE CMOS ON (110) WAFERS
- Publication number 20080217691
- Publication date Sep 11, 2008
- International Business Machines Corporation
- Massimo V. Fischetti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT OF ELECTRON AND HOLE MOBILITIES IN <110> Si UNDER BIAXI...
- Publication number 20080206958
- Publication date Aug 28, 2008
- International Business Machines Corporation
- Victor Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT OF ELECTRON AND HOLE MOBILITIES IN <110> Si UNDER BIAXI...
- Publication number 20080044987
- Publication date Feb 21, 2008
- International Business Machines Corporation
- Victor Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT OF ELECTRON AND HOLE MOBILITIES IN <110> Si UNDER BIAXI...
- Publication number 20080044966
- Publication date Feb 21, 2008
- International Business Machines Corporation
- Victor Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Higher performance CMOS on (110) wafers
- Publication number 20070158739
- Publication date Jul 12, 2007
- International Business Machines Corporation
- Massimo V. Fischetti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT OF ELECTRON AND HOLE MOBILITIES IN 110 Si UNDER BIAXIAL...
- Publication number 20070099367
- Publication date May 3, 2007
- International Business Machines Corporation
- Victor Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhancement of electron and hole mobilities in <110> Si under biaxi...
- Publication number 20050145837
- Publication date Jul 7, 2005
- International Business Machines Corporation
- Victor Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Germanium field effect transistor and method of fabricating the same
- Publication number 20030190791
- Publication date Oct 9, 2003
- International Business Machines Corporation
- Massimo V. Fischetti
- H01 - BASIC ELECTRIC ELEMENTS

Massimo V. Fischetti

Person

Patents Grantslast 30 patents

Higher performance CMOS on (110) wafers

Enhancement of electron and hole mobilities in <110> Si under biaxi...

Enhancement of electron and hole mobilities in <110> Si under biaxi...

Enhancement of electron and hole mobilities in <110> Si under biaxi...

Enhancement of electron and hole mobilities in <110> Si under biaxi...

Germanium field effect transistor and method of fabricating the same

Patents Applicationslast 30 patents

HIGHER PERFORMANCE CMOS ON (110) WAFERS

ENHANCEMENT OF ELECTRON AND HOLE MOBILITIES IN <110> Si UNDER BIAXI...

ENHANCEMENT OF ELECTRON AND HOLE MOBILITIES IN <110> Si UNDER BIAXI...

ENHANCEMENT OF ELECTRON AND HOLE MOBILITIES IN <110> Si UNDER BIAXI...

Higher performance CMOS on (110) wafers

ENHANCEMENT OF ELECTRON AND HOLE MOBILITIES IN 110 Si UNDER BIAXIAL...

Enhancement of electron and hole mobilities in <110> Si under biaxi...

Germanium field effect transistor and method of fabricating the same