Matt Yeh

Person

Hsinchun, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method of patterning a metal gate of semiconductor device
- Patent number 9,362,124
- Issue date Jun 7, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of patterning a metal gate of semiconductor device
- Patent number 8,993,452
- Issue date Mar 31, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double treatment on hard mask for gate N/P patterning
- Patent number 8,980,706
- Issue date Mar 17, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for a gate replacement process
- Patent number 8,658,525
- Issue date Feb 25, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating gate electrode using a treated hard mask
- Patent number 8,569,185
- Issue date Oct 29, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for removing dummy poly in a gate last process
- Patent number 8,415,254
- Issue date Apr 9, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for a gate replacement process
- Patent number 8,367,563
- Issue date Feb 5, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a gate structure
- Patent number 8,361,855
- Issue date Jan 29, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precise resistor on a semiconductor device
- Patent number 8,361,848
- Issue date Jan 29, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Da-Yuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of patterning a metal gate of semiconductor device
- Patent number 8,357,617
- Issue date Jan 22, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating high-k/metal gate device
- Patent number 8,334,197
- Issue date Dec 18, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Da-Yuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modified profile gate structure for semiconductor device and method...
- Patent number 8,329,546
- Issue date Dec 11, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Da-Yuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming metal gate transistors
- Patent number 8,268,085
- Issue date Sep 18, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating high-K/metal gate devices in a gate last process
- Patent number 8,222,132
- Issue date Jul 17, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Da-Yuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating gate electrode using a treated hard mask
- Patent number 8,173,504
- Issue date May 8, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling gate thickness in forming FinFET devices
- Patent number 8,114,721
- Issue date Feb 14, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shun Wu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate oxide leakage reduction
- Patent number 8,110,490
- Issue date Feb 7, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a gate structure
- Patent number 8,048,733
- Issue date Nov 1, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for patterning a metal gate
- Patent number 7,915,105
- Issue date Mar 29, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High selectivity etching process for metal gate N/P patterning
- Patent number 7,732,344
- Issue date Jun 8, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fang Wen Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface preparation for gate oxide formation that avoids chemical o...
- Patent number 7,727,900
- Issue date Jun 1, 2010
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate dielectric layers and methods of fabricating gate dielectric l...
- Patent number 7,713,854
- Issue date May 11, 2010
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chi-Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF PATTERNING A METAL GATE OF SEMICONDUCTOR DEVICE
- Publication number 20150206755
- Publication date Jul 23, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for a Gate Replacement Process
- Publication number 20130149821
- Publication date Jun 13, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Patterning a Metal Gate of Semiconductor Device
- Publication number 20130130488
- Publication date May 23, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODIFIED PROFILE GATE STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD...
- Publication number 20120049247
- Publication date Mar 1, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Da-Yuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A GATE STRUCTURE
- Publication number 20120018817
- Publication date Jan 26, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Precise Resistor on a Semiconductor Device
- Publication number 20110266637
- Publication date Nov 3, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Da-Yuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING GATE ELECTRODE USING A TREATED HARD MASK
- Publication number 20110250725
- Publication date Oct 13, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING GATE ELECTRODE USING A TREATED HARD MASK
- Publication number 20110195548
- Publication date Aug 11, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING HIGH-K/METAL GATE DEVICE
- Publication number 20110143529
- Publication date Jun 16, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Da-Yuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CONTROLLING GATE THICKNESS IN FORMING FINFET DEVICES
- Publication number 20110143510
- Publication date Jun 16, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shun Wu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CONTROLLING GATE THICKNESSES IN FORMING FUSI GATES
- Publication number 20110097867
- Publication date Apr 28, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shun Wu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A GATE STRUCTURE
- Publication number 20110086502
- Publication date Apr 14, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR A GATE REPLACEMENT PROCESS
- Publication number 20110081774
- Publication date Apr 7, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING METAL GATE TRANSISTORS
- Publication number 20100240204
- Publication date Sep 23, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING HIGH-K/METAL GATE DEVICES IN A GATE LAST PROCESS
- Publication number 20100124818
- Publication date May 20, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Da-Yuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL METHOD FOR REMOVING DUMMY POLY IN A GATE LAST PROCESS
- Publication number 20100124823
- Publication date May 20, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PATTERNING A METAL GATE
- Publication number 20100112811
- Publication date May 6, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE TREATMENT ON HARD MASK FOR GATE N/P PATTERNING
- Publication number 20100068875
- Publication date Mar 18, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PATTERNING A METAL GATE OF SEMICONDUCTOR DEVICE
- Publication number 20100048011
- Publication date Feb 25, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE OXIDE LEAKAGE REDUCTION
- Publication number 20090047799
- Publication date Feb 19, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE DIELECTRIC LAYERS AND METHODS OF FABRICATING GATE DIELECTRIC L...
- Publication number 20080096394
- Publication date Apr 24, 2008
- Taiwan Semiconductor Manufacturing Co., LTD
- Chi-Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH TEMPERATURE SPM TREATMENT FOR PHOTORESIST STRIPPING
- Publication number 20080060682
- Publication date Mar 13, 2008
- Taiwan Semiconductor Manufacturing Co., LTD
- Matt Yeh
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Surface preparation for gate oxide formation that avoids chemical o...
- Publication number 20070197037
- Publication date Aug 23, 2007
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitridated gate dielectric layer
- Publication number 20060275975
- Publication date Dec 7, 2006
- Matt Yeh
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method of patterning a metal gate of semiconductor device

Method of patterning a metal gate of semiconductor device

Double treatment on hard mask for gate N/P patterning

Methods for a gate replacement process

Method of fabricating gate electrode using a treated hard mask

Method for removing dummy poly in a gate last process

Methods for a gate replacement process

Method for fabricating a gate structure

Precise resistor on a semiconductor device

Method of patterning a metal gate of semiconductor device

Method of fabricating high-k/metal gate device

Modified profile gate structure for semiconductor device and method...

Methods for forming metal gate transistors

Fabricating high-K/metal gate devices in a gate last process

Method of fabricating gate electrode using a treated hard mask

Method of controlling gate thickness in forming FinFET devices

Gate oxide leakage reduction

Method for fabricating a gate structure

Method for patterning a metal gate

High selectivity etching process for metal gate N/P patterning

Surface preparation for gate oxide formation that avoids chemical o...

Gate dielectric layers and methods of fabricating gate dielectric l...

Patents Applicationslast 30 patents

METHOD OF PATTERNING A METAL GATE OF SEMICONDUCTOR DEVICE

Methods for a Gate Replacement Process

Method of Patterning a Metal Gate of Semiconductor Device

MODIFIED PROFILE GATE STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD...

METHOD FOR FABRICATING A GATE STRUCTURE

Precise Resistor on a Semiconductor Device

METHOD OF FABRICATING GATE ELECTRODE USING A TREATED HARD MASK

METHOD OF FABRICATING GATE ELECTRODE USING A TREATED HARD MASK

METHOD OF FABRICATING HIGH-K/METAL GATE DEVICE

METHOD OF CONTROLLING GATE THICKNESS IN FORMING FINFET DEVICES

METHOD OF CONTROLLING GATE THICKNESSES IN FORMING FUSI GATES

METHOD FOR FABRICATING A GATE STRUCTURE

METHODS FOR A GATE REPLACEMENT PROCESS

METHODS FOR FORMING METAL GATE TRANSISTORS

FABRICATING HIGH-K/METAL GATE DEVICES IN A GATE LAST PROCESS

NOVEL METHOD FOR REMOVING DUMMY POLY IN A GATE LAST PROCESS

METHOD FOR PATTERNING A METAL GATE

DOUBLE TREATMENT ON HARD MASK FOR GATE N/P PATTERNING

METHOD OF PATTERNING A METAL GATE OF SEMICONDUCTOR DEVICE

GATE OXIDE LEAKAGE REDUCTION

GATE DIELECTRIC LAYERS AND METHODS OF FABRICATING GATE DIELECTRIC L...

HIGH TEMPERATURE SPM TREATMENT FOR PHOTORESIST STRIPPING

Surface preparation for gate oxide formation that avoids chemical o...

Nitridated gate dielectric layer