Matteo Dainese

Person

Munich, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including a plurality of trenches
- Patent number 12,074,212
- Issue date Aug 27, 2024
- Infineon Technologies AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having a barrier region
- Patent number 12,034,066
- Issue date Jul 9, 2024
- Infineon Technologies AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device using wet etching and...
- Patent number 12,018,387
- Issue date Jun 25, 2024
- Infineon Technologies Austria AG
- Saurabh Roy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Power semiconductor device with p-contact and doped insulation bloc...
- Patent number 11,949,006
- Issue date Apr 2, 2024
- Infineon Technologies Dresden GmbH & Co. KG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having elevated source regions and reces...
- Patent number 11,888,061
- Issue date Jan 30, 2024
- Infineon Technologies Dresden GmbH & Co. KG
- Erich Griebl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode including a plurality of trenches
- Patent number 11,869,985
- Issue date Jan 9, 2024
- Infineon Technologies Austria AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor switch having a cross-trench structure
- Patent number 11,610,986
- Issue date Mar 21, 2023
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a transistor with one or more barrie...
- Patent number 11,610,976
- Issue date Mar 21, 2023
- Infineon Technologies Austria AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of processing a power semiconductor device
- Patent number 11,594,621
- Issue date Feb 28, 2023
- Infineon Technologies AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor switch having a cross-trench structure
- Patent number 11,581,429
- Issue date Feb 14, 2023
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with integrated current sensor
- Patent number 11,495,680
- Issue date Nov 8, 2022
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse-conducting igbt having a reduced forward recovery voltage
- Patent number 11,296,213
- Issue date Apr 5, 2022
- Infineon Technologies Austria AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a power semiconductor device
- Patent number 11,257,946
- Issue date Feb 22, 2022
- Infineon Technologies Dresden GmbH & Co. KG
- Erich Griebl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for IGBT devices having an integrated diode
- Patent number 11,075,291
- Issue date Jul 27, 2021
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with reliably verifiable p-contact and m...
- Patent number 11,018,051
- Issue date May 25, 2021
- Infineon Technologies Dresden GmbH & Co. KG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor switch with improved controllability
- Patent number 11,011,629
- Issue date May 18, 2021
- Infineon Technologies Dresden GmbH & Co. KG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
POWER SEMICONDUCTOR DEVICE INCLUDING A DIODE AREA
- Publication number 20240332407
- Publication date Oct 3, 2024
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE USING WET ETCHING AND...
- Publication number 20240318320
- Publication date Sep 26, 2024
- Infineon Technologies Austria AG
- Saurabh Roy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
RC-IGBT AND MANUFACTURING METHOD OF RC-IGBT
- Publication number 20240234414
- Publication date Jul 11, 2024
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC-IGBT AND MANUFACTURING METHOD OF RC-IGBT
- Publication number 20240136353
- Publication date Apr 25, 2024
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE INCLUDING A TRENCH ELECTRODE SUBDIVIDED INTO AT LEAST FIRST A...
- Publication number 20240088304
- Publication date Mar 14, 2024
- Infineon Technologies Austria AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Diode and Method of Manufacturing a Power Diode
- Publication number 20230307554
- Publication date Sep 28, 2023
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20230290828
- Publication date Sep 14, 2023
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having a Barrier Region
- Publication number 20230207673
- Publication date Jun 29, 2023
- INFINEON TECHNOLOGIES AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A TRANSISTOR WITH TRENCHES AND MESAS
- Publication number 20230197828
- Publication date Jun 22, 2023
- Infineon Technologies Austria AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING AN RC-IGBT
- Publication number 20220384624
- Publication date Dec 1, 2022
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE USING WET ETCHING AND...
- Publication number 20220235470
- Publication date Jul 28, 2022
- Saurabh Roy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Semiconductor Device with Integrated Current Sensor
- Publication number 20220165879
- Publication date May 26, 2022
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device
- Publication number 20220140135
- Publication date May 5, 2022
- Erich Griebl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode Including a Plurality of Trenches
- Publication number 20220045221
- Publication date Feb 10, 2022
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including a Plurality of Trenches
- Publication number 20220045200
- Publication date Feb 10, 2022
- INFINEON TECHNOLOGIES AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Switch Having a Cross-Trench Structure
- Publication number 20210313460
- Publication date Oct 7, 2021
- INFINEON TECHNOLOGIES AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reverse-Conducting IGBT Having a Reduced Forward Recovery Voltage
- Publication number 20210296474
- Publication date Sep 23, 2021
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with p-contact
- Publication number 20210272843
- Publication date Sep 2, 2021
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A TRANSISTOR WITH ONE OR MORE BARRIE...
- Publication number 20210134977
- Publication date May 6, 2021
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Processing a Power Semiconductor Device
- Publication number 20210050436
- Publication date Feb 18, 2021
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device and Method of Forming a Power Semiconduc...
- Publication number 20200235235
- Publication date Jul 23, 2020
- Erich Griebl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Switch with Improved Controllability
- Publication number 20200168727
- Publication date May 28, 2020
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with Reliably Verifiable p-contact and M...
- Publication number 20200066579
- Publication date Feb 27, 2020
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS

Matteo Dainese

Person

Patents Grantslast 30 patents

Semiconductor device including a plurality of trenches

Power semiconductor device having a barrier region

Method for fabricating a semiconductor device using wet etching and...

Power semiconductor device with p-contact and doped insulation bloc...

Power semiconductor device having elevated source regions and reces...

Diode including a plurality of trenches

Power semiconductor switch having a cross-trench structure

Semiconductor device including a transistor with one or more barrie...

Method of processing a power semiconductor device

Power semiconductor switch having a cross-trench structure

Semiconductor device with integrated current sensor

Reverse-conducting igbt having a reduced forward recovery voltage

Method of forming a power semiconductor device

Isolation structure for IGBT devices having an integrated diode

Power semiconductor device with reliably verifiable p-contact and m...

Power semiconductor switch with improved controllability

Patents Applicationslast 30 patents

POWER SEMICONDUCTOR DEVICE INCLUDING A DIODE AREA

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE USING WET ETCHING AND...

RC-IGBT AND MANUFACTURING METHOD OF RC-IGBT

RC-IGBT AND MANUFACTURING METHOD OF RC-IGBT

DIODE INCLUDING A TRENCH ELECTRODE SUBDIVIDED INTO AT LEAST FIRST A...

Power Diode and Method of Manufacturing a Power Diode

INSULATED GATE BIPOLAR TRANSISTOR

Power Semiconductor Device Having a Barrier Region

SEMICONDUCTOR DEVICE HAVING A TRANSISTOR WITH TRENCHES AND MESAS

SEMICONDUCTOR DEVICE INCLUDING AN RC-IGBT

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE USING WET ETCHING AND...

Semiconductor Device with Integrated Current Sensor

Power Semiconductor Device

Diode Including a Plurality of Trenches

Semiconductor Device Including a Plurality of Trenches

Power Semiconductor Switch Having a Cross-Trench Structure

Reverse-Conducting IGBT Having a Reduced Forward Recovery Voltage

Power Semiconductor Device with p-contact

SEMICONDUCTOR DEVICE INCLUDING A TRANSISTOR WITH ONE OR MORE BARRIE...

Method of Processing a Power Semiconductor Device

Power Semiconductor Device and Method of Forming a Power Semiconduc...

Power Semiconductor Switch with Improved Controllability

Power Semiconductor Device with Reliably Verifiable p-contact and M...