Matteo Dainese

Person

Villach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor component with edge termination region
- Patent number 11,848,377
- Issue date Dec 19, 2023
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having overvoltage protection and method...
- Patent number 11,843,045
- Issue date Dec 12, 2023
- Infineon Technologies Austria AG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power diode and method of manufacturing a power diode
- Patent number 11,695,083
- Issue date Jul 4, 2023
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with dV/dt controllability
- Patent number 11,581,428
- Issue date Feb 14, 2023
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power transistor with dV/dt controllability and tapered mesas
- Patent number 11,114,528
- Issue date Sep 7, 2021
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having a cross-trench arrangement
- Patent number 11,075,290
- Issue date Jul 27, 2021
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component with edge termination region
- Patent number 11,018,249
- Issue date May 25, 2021
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power diode and method of manufacturing a power diode
- Patent number 10,978,596
- Issue date Apr 13, 2021
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a barrier region
- Patent number 10,923,578
- Issue date Feb 16, 2021
- Infineon Technologies Austria AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with separation regions
- Patent number 10,903,344
- Issue date Jan 26, 2021
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing IGBT with dV/dt controllability
- Patent number 10,854,739
- Issue date Dec 1, 2020
- Infineon Technologies AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with dV/dt controllability
- Patent number 10,840,362
- Issue date Nov 17, 2020
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with transistor cells and enhancement cells wi...
- Patent number 10,825,906
- Issue date Nov 3, 2020
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 10,825,716
- Issue date Nov 3, 2020
- Infineon Technologies AG
- Andreas Moser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having overvoltage protection
- Patent number 10,790,384
- Issue date Sep 29, 2020
- Infineon Technologies Austria AG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing IGBT with dV/dt controllability
- Patent number 10,615,272
- Issue date Apr 7, 2020
- Infineon Technologies AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried insulator regions and methods of formation thereof
- Patent number 10,410,911
- Issue date Sep 10, 2019
- Infineon Technologies AG
- Carsten Schaeffer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with separation regions
- Patent number 10,381,467
- Issue date Aug 13, 2019
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 10,355,116
- Issue date Jul 16, 2019
- Infineon Technologies Austria AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with buried cavities and dielectric support st...
- Patent number 10,312,258
- Issue date Jun 4, 2019
- Infineon Technologies AG
- Johannes Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with dV/dt controllability and cross-tre...
- Patent number 10,304,952
- Issue date May 28, 2019
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse-blocking IGBT having a reverse-blocking edge termination st...
- Patent number 10,276,708
- Issue date Apr 30, 2019
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having electrode tre...
- Patent number 10,217,837
- Issue date Feb 26, 2019
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,177,248
- Issue date Jan 8, 2019
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with transistor cells and enhancement cells wi...
- Patent number 9,997,602
- Issue date Jun 12, 2018
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor substrate with buried cavities an...
- Patent number 9,935,126
- Issue date Apr 3, 2018
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with control structure including buried portio...
- Patent number 9,917,186
- Issue date Mar 13, 2018
- Infineon Technologies AG
- Johannes Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and reverse conducting insulated gate bipolar...
- Patent number 9,876,100
- Issue date Jan 23, 2018
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having electrode tre...
- Patent number 9,837,506
- Issue date Dec 5, 2017
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a reverse-blocking IGBT
- Patent number 9,741,570
- Issue date Aug 22, 2017
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Component with Edge Termination Region
- Publication number 20210257489
- Publication date Aug 19, 2021
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Diode and Method of Manufacturing a Power Diode
- Publication number 20210226072
- Publication date Jul 22, 2021
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with dV/dt Controllability
- Publication number 20210043759
- Publication date Feb 11, 2021
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE HAVING OVERVOLTAGE PROTECTION AND METHOD...
- Publication number 20200395472
- Publication date Dec 17, 2020
- Infineon Technologies Austria AG
- Markus BENINGER-BINA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing IGBT with dV/dt Controllability
- Publication number 20200235232
- Publication date Jul 23, 2020
- INFINEON TECHNOLOGIES AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with dV/dt Controllability and Tapered Mesas
- Publication number 20190305083
- Publication date Oct 3, 2019
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Separation Regions
- Publication number 20190288094
- Publication date Sep 19, 2019
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having a Cross-Trench Arrangement
- Publication number 20190273155
- Publication date Sep 5, 2019
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20190259863
- Publication date Aug 22, 2019
- Infineon Technologies Austria AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Component with Edge Termination Region
- Publication number 20190237575
- Publication date Aug 1, 2019
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising a Barrier Region
- Publication number 20190189772
- Publication date Jun 20, 2019
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing a Semiconductor Device
- Publication number 20190148217
- Publication date May 16, 2019
- Andreas Moser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing IGBT with dV/dt Controllability
- Publication number 20190123185
- Publication date Apr 25, 2019
- INFINEON TECHNOLOGIES AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with dV/dt Controllability
- Publication number 20190123186
- Publication date Apr 25, 2019
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Diode and Method of Manufacturing a Power Diode
- Publication number 20190058065
- Publication date Feb 21, 2019
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with dV/dt Controllability and Cross-Tre...
- Publication number 20180342605
- Publication date Nov 29, 2018
- INFINEON TECHNOLOGIES AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Transistor Cells and Enhancement Cells
- Publication number 20180277642
- Publication date Sep 27, 2018
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20180269313
- Publication date Sep 20, 2018
- Infineon Technologies Austria AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Buried Insulator Regions and Methods of Formation Thereof
- Publication number 20180166324
- Publication date Jun 14, 2018
- INFINEON TECHNOLOGIES AG
- Carsten Schaeffer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Separation Regions
- Publication number 20180145161
- Publication date May 24, 2018
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device Having Electrode Tre...
- Publication number 20180090594
- Publication date Mar 29, 2018
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20180083132
- Publication date Mar 22, 2018
- INFINEON TECHNOLOGIES AUSTRIA AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reverse-Blocking IGBT Having a Reverse-Blocking Edge Termination St...
- Publication number 20180033627
- Publication date Feb 1, 2018
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device Having Electrode Tre...
- Publication number 20170148893
- Publication date May 25, 2017
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Control Structure Including Buried Portio...
- Publication number 20170110574
- Publication date Apr 20, 2017
- lnfineon Technologies AG
- Johannes Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Semiconductor Substrate With Buried Cavities an...
- Publication number 20160322386
- Publication date Nov 3, 2016
- INFINEON TECHNOLOGIES AG
- Johannes Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Transistor Cells and Enhancement Cells
- Publication number 20160190123
- Publication date Jun 30, 2016
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Reverse Conducting Insulated Gate Bipolar...
- Publication number 20160093724
- Publication date Mar 31, 2016
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CONTROL STRUCTURE INCLUDING BURIED PORTIO...
- Publication number 20160071974
- Publication date Mar 10, 2016
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Semiconductor Substrate With Buried Cavities an...
- Publication number 20160071759
- Publication date Mar 10, 2016
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS

Matteo Dainese

Person

Patents Grantslast 30 patents

Semiconductor component with edge termination region

Power semiconductor device having overvoltage protection and method...

Power diode and method of manufacturing a power diode

IGBT with dV/dt controllability

Power transistor with dV/dt controllability and tapered mesas

Power semiconductor device having a cross-trench arrangement

Semiconductor component with edge termination region

Power diode and method of manufacturing a power diode

Semiconductor device comprising a barrier region

Semiconductor device with separation regions

Method for producing IGBT with dV/dt controllability

IGBT with dV/dt controllability

Semiconductor device with transistor cells and enhancement cells wi...

Method for manufacturing a semiconductor device

Power semiconductor device having overvoltage protection

Method for producing IGBT with dV/dt controllability

Buried insulator regions and methods of formation thereof

Semiconductor device with separation regions

Power semiconductor device

Semiconductor device with buried cavities and dielectric support st...

Power semiconductor device with dV/dt controllability and cross-tre...

Reverse-blocking IGBT having a reverse-blocking edge termination st...

Method of manufacturing a semiconductor device having electrode tre...

Semiconductor device

Semiconductor device with transistor cells and enhancement cells wi...

Method of forming a semiconductor substrate with buried cavities an...

Semiconductor device with control structure including buried portio...

Semiconductor device and reverse conducting insulated gate bipolar...

Method of manufacturing a semiconductor device having electrode tre...

Method of manufacturing a reverse-blocking IGBT

Patents Applicationslast 30 patents

Semiconductor Component with Edge Termination Region

Power Diode and Method of Manufacturing a Power Diode

IGBT with dV/dt Controllability

POWER SEMICONDUCTOR DEVICE HAVING OVERVOLTAGE PROTECTION AND METHOD...

Method for Producing IGBT with dV/dt Controllability

IGBT with dV/dt Controllability and Tapered Mesas

Semiconductor Device with Separation Regions

Power Semiconductor Device Having a Cross-Trench Arrangement

POWER SEMICONDUCTOR DEVICE

Semiconductor Component with Edge Termination Region

Semiconductor Device Comprising a Barrier Region

Method for Manufacturing a Semiconductor Device

Method for Producing IGBT with dV/dt Controllability

IGBT with dV/dt Controllability

Power Diode and Method of Manufacturing a Power Diode

Power Semiconductor Device with dV/dt Controllability and Cross-Tre...

Semiconductor Device with Transistor Cells and Enhancement Cells

POWER SEMICONDUCTOR DEVICE

Buried Insulator Regions and Methods of Formation Thereof

Semiconductor Device with Separation Regions

Method of Manufacturing a Semiconductor Device Having Electrode Tre...

Semiconductor Device

Reverse-Blocking IGBT Having a Reverse-Blocking Edge Termination St...

Method of Manufacturing a Semiconductor Device Having Electrode Tre...

Semiconductor Device with Control Structure Including Buried Portio...

Method of Forming a Semiconductor Substrate With Buried Cavities an...

Semiconductor Device with Transistor Cells and Enhancement Cells

Semiconductor Device and Reverse Conducting Insulated Gate Bipolar...

SEMICONDUCTOR DEVICE WITH CONTROL STRUCTURE INCLUDING BURIED PORTIO...

Method of Forming a Semiconductor Substrate With Buried Cavities an...