Matthew Flaugh

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Albany, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Selective and isotropic etch of silicon over silicon-germanium allo...
- Patent number 12,272,558
- Issue date Apr 8, 2025
- Tokyo Electron Limited
- Matthew Flaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas phase etch with controllable etch selectivity of metals
- Patent number 11,715,643
- Issue date Aug 1, 2023
- Tokyo Electron Limited
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer etch (ALE) of tungsten or other metal layers
- Patent number 11,189,499
- Issue date Nov 30, 2021
- Tokyo Electron Limited
- Yu-Hao Tsai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SURFACE MODIFICATION TO ACHIEVE SELECTIVE ISOTROPIC ETCH
- Publication number 20240096639
- Publication date Mar 21, 2024
- TOKYO ELECTRON LIMITED
- Jonathan HOLLIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE AND ISOTROPIC ETCH OF SILICON OVER SILICON-GERMANIUM ALLO...
- Publication number 20230360921
- Publication date Nov 9, 2023
- TOKYO ELECTRON LIMITED
- Matthew FLAUGH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF METALS
- Publication number 20210020454
- Publication date Jan 21, 2021
- TOKYO ELECTRON LIMITED
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER ETCH (ALE) OF TUNGSTEN OR OTHER METAL LAYERS
- Publication number 20200312673
- Publication date Oct 1, 2020
- TOKYO ELECTRON LIMITED
- Yu-Hao Tsai
- H01 - BASIC ELECTRIC ELEMENTS