Matthew V. Metz

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor with isolation below source and drain
- Patent number 12,288,803
- Issue date Apr 29, 2025
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned interconnect structures and methods of fabrication
- Patent number 12,266,570
- Issue date Apr 1, 2025
- Intel Corporation
- Kimin Jun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with monocrystalline metal chalcogenide channel materials
- Patent number 12,266,720
- Issue date Apr 1, 2025
- Intel Corporation
- Carl Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallization stacks with self-aligned staggered metal lines
- Patent number 12,261,114
- Issue date Mar 25, 2025
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitors with built-in electric fields
- Patent number 12,224,309
- Issue date Feb 11, 2025
- Intel Corporation
- Sou-Chi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ribbon or wire transistor stack with selective dipole threshold vol...
- Patent number 12,183,739
- Issue date Dec 31, 2024
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistors having a backside channel contact for high de...
- Patent number 12,150,297
- Issue date Nov 19, 2024
- Intel Corporation
- Noriyuki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance approaches for fabricating contacts and the resultin...
- Patent number 12,119,387
- Issue date Oct 15, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystalline bottom electrode for perovskite capacitors and methods...
- Patent number 12,100,731
- Issue date Sep 24, 2024
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance semiconductor oxide material channel regions for NMOS
- Patent number 12,068,319
- Issue date Aug 20, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitors and methods of fabrication
- Patent number 12,048,165
- Issue date Jul 23, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Grant
Subtractively patterned interconnect structures for integrated circ...
- Patent number 12,027,458
- Issue date Jul 2, 2024
- Intel Corporation
- Kevin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-dielectric gate stack for crystalline thin film transistors
- Patent number 12,009,433
- Issue date Jun 11, 2024
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with gate electrode self-aligned to semico...
- Patent number 11,996,447
- Issue date May 28, 2024
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells with ferroelectric capacitors separate from transistor...
- Patent number 11,980,037
- Issue date May 7, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating transistor with thinned channel
- Patent number 11,978,799
- Issue date May 7, 2024
- Tahoe Research, LTD.
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation layers for thin film transistors and methods of fabrica...
- Patent number 11,955,560
- Issue date Apr 9, 2024
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric gate stack for band-to-band tunneling reduction
- Patent number 11,929,435
- Issue date Mar 12, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Halogen treatment for NMOS contact resistance improvement
- Patent number 11,923,290
- Issue date Mar 5, 2024
- Intel Corporation
- Siddharth Chouksey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with isolation below source and drain
- Patent number 11,923,410
- Issue date Mar 5, 2024
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor structures with regrown source and drain
- Patent number 11,887,988
- Issue date Jan 30, 2024
- Intel Corporation
- Ashish Agrawal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architectures without fin end gap
- Patent number 11,869,889
- Issue date Jan 9, 2024
- Intel Corporation
- Szuya S. Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunneling field-effect transistors
- Patent number 11,862,715
- Issue date Jan 2, 2024
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical architecture of thin film transistors
- Patent number 11,843,054
- Issue date Dec 12, 2023
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Subfin leakage suppression using fixed charge
- Patent number 11,784,239
- Issue date Oct 10, 2023
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistors for ultra-dense logic and memory applications
- Patent number 11,777,029
- Issue date Oct 3, 2023
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel formation for three dimensional transistors
- Patent number 11,777,013
- Issue date Oct 3, 2023
- Intel Corporation
- Abhishek Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium-containing fin of a transistor device with an indium-rich core
- Patent number 11,764,275
- Issue date Sep 19, 2023
- Intel Corporation
- Chandra S. Mohapatra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source-channel junction for III-V metal-oxide-semiconductor field e...
- Patent number 11,756,998
- Issue date Sep 12, 2023
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer high-k gate dielectric for a high performance logic tran...
- Patent number 11,742,407
- Issue date Aug 29, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Low Temperature Deposition of Hydrogen-Free Diamond-Like Carbon Films
- Publication number 20250140543
- Publication date May 1, 2025
- Intel Corporation
- Ilya KARPOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOL...
- Publication number 20250133822
- Publication date Apr 24, 2025
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR DOPING 2D TRANSISTOR DEVICES AND RESULTING ARCHITECTURES
- Publication number 20250113599
- Publication date Apr 3, 2025
- Intel Corporation
- Rachel A. Steinhardt
Information Patent Application
METHOD OF FABRICATING A 2D CHANNEL TRANSISTOR BY EMPLOYING SELECTIV...
- Publication number 20250113572
- Publication date Apr 3, 2025
- Intel Corporation
- Mahmut Sami Kavrik
Information Patent Application
TRANSISTOR COMPRISING A COMPOSITE GATE DIELECTRIC STRUCTURE AND MET...
- Publication number 20250113540
- Publication date Apr 3, 2025
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARCHITECTURES AND METHODS TO MODULATE CONTACT RESISTANCE IN 2D MATE...
- Publication number 20250107147
- Publication date Mar 27, 2025
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS
- Publication number 20250006841
- Publication date Jan 2, 2025
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES
- Publication number 20250006840
- Publication date Jan 2, 2025
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT
- Publication number 20250008852
- Publication date Jan 2, 2025
- Intel Corporation
- Punyashloka Debashis
Information Patent Application
PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE A...
- Publication number 20250006791
- Publication date Jan 2, 2025
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEV...
- Publication number 20250006839
- Publication date Jan 2, 2025
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PEROVSKITE-BASED FIELD EFFECT TRANSISTOR (FET) DEVICES ENABLED BY E...
- Publication number 20240429301
- Publication date Dec 26, 2024
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC CAPACITORS AND METHODS OF FABRICATION
- Publication number 20240373644
- Publication date Nov 7, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Application
SUBTRACTIVELY PATTERNED INTERCONNECT STRUCTURES FOR INTEGRATED CIRC...
- Publication number 20240304543
- Publication date Sep 12, 2024
- Intel Corporation
- Kevin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION LAYERS FOR THIN FILM TRANSISTORS AND METHODS OF FABRICA...
- Publication number 20240234579
- Publication date Jul 11, 2024
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS
- Publication number 20240222428
- Publication date Jul 4, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BEOL CONTACT METALS FOR 2D TRANSISTORS
- Publication number 20240222461
- Publication date Jul 4, 2024
- Intel Corporation
- Ande Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...
- Publication number 20240222113
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D NANORIBBONS UTILIZING SILICON SCAFFOLDING
- Publication number 20240222483
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GR...
- Publication number 20240222485
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES
- Publication number 20240222441
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPUTTER TARGETS FOR SELF-DOPED SOURCE AND DRAIN CONTACTS
- Publication number 20240186127
- Publication date Jun 6, 2024
- Intel Corporation
- Ilya V. Karpov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INTEGRATED CIRCUIT INTERCONNECT LEVEL COMPRISING MULTI-HEIGHT LINES...
- Publication number 20240170394
- Publication date May 23, 2024
- Intel Corporation
- Elijah Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS
- Publication number 20240120415
- Publication date Apr 11, 2024
- Intel Corporation
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE FERROELECTRIC DEPLOYMENT FOR SINGLE-TRANSISTOR, MULTIPLE-...
- Publication number 20240112714
- Publication date Apr 4, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNOLOGIES FOR PEROVSKITE TRANSISTORS
- Publication number 20240113212
- Publication date Apr 4, 2024
- Intel Corporation
- Ian Alexander Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN
- Publication number 20240113161
- Publication date Apr 4, 2024
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC
- Publication number 20240113220
- Publication date Apr 4, 2024
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES
- Publication number 20240105810
- Publication date Mar 28, 2024
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT (IC) DEVICE WITH MULTILAYER METAL LINE
- Publication number 20240105588
- Publication date Mar 28, 2024
- Intel Corporation
- Ilya V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS

Matthew V. Metz

Person

Patents Grantslast 30 patents

Transistor with isolation below source and drain

Self-aligned interconnect structures and methods of fabrication

Transistors with monocrystalline metal chalcogenide channel materials

Metallization stacks with self-aligned staggered metal lines

Capacitors with built-in electric fields

Ribbon or wire transistor stack with selective dipole threshold vol...

Thin film transistors having a backside channel contact for high de...

Low resistance approaches for fabricating contacts and the resultin...

Crystalline bottom electrode for perovskite capacitors and methods...

High performance semiconductor oxide material channel regions for NMOS

Ferroelectric capacitors and methods of fabrication

Subtractively patterned interconnect structures for integrated circ...

Multi-dielectric gate stack for crystalline thin film transistors

Field effect transistors with gate electrode self-aligned to semico...

Memory cells with ferroelectric capacitors separate from transistor...

Method for fabricating transistor with thinned channel

Passivation layers for thin film transistors and methods of fabrica...

Ferroelectric gate stack for band-to-band tunneling reduction

Halogen treatment for NMOS contact resistance improvement

Transistor with isolation below source and drain

Thin film transistor structures with regrown source and drain

Self-aligned gate endcap (SAGE) architectures without fin end gap

Vertical tunneling field-effect transistors

Vertical architecture of thin film transistors

Subfin leakage suppression using fixed charge

Vertical transistors for ultra-dense logic and memory applications

Channel formation for three dimensional transistors

Indium-containing fin of a transistor device with an indium-rich core

Source-channel junction for III-V metal-oxide-semiconductor field e...

Multilayer high-k gate dielectric for a high performance logic tran...

Patents Applicationslast 30 patents

Low Temperature Deposition of Hydrogen-Free Diamond-Like Carbon Films

RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOL...

METHODS FOR DOPING 2D TRANSISTOR DEVICES AND RESULTING ARCHITECTURES

METHOD OF FABRICATING A 2D CHANNEL TRANSISTOR BY EMPLOYING SELECTIV...

TRANSISTOR COMPRISING A COMPOSITE GATE DIELECTRIC STRUCTURE AND MET...

ARCHITECTURES AND METHODS TO MODULATE CONTACT RESISTANCE IN 2D MATE...

TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS

NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES

TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT

PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE A...

P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEV...

PEROVSKITE-BASED FIELD EFFECT TRANSISTOR (FET) DEVICES ENABLED BY E...

FERROELECTRIC CAPACITORS AND METHODS OF FABRICATION

SUBTRACTIVELY PATTERNED INTERCONNECT STRUCTURES FOR INTEGRATED CIRC...

PASSIVATION LAYERS FOR THIN FILM TRANSISTORS AND METHODS OF FABRICA...

SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS

BEOL CONTACT METALS FOR 2D TRANSISTORS

PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...

2D NANORIBBONS UTILIZING SILICON SCAFFOLDING

TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GR...

SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES

SPUTTER TARGETS FOR SELF-DOPED SOURCE AND DRAIN CONTACTS

INTEGRATED CIRCUIT INTERCONNECT LEVEL COMPRISING MULTI-HEIGHT LINES...

TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS

SELECTIVE FERROELECTRIC DEPLOYMENT FOR SINGLE-TRANSISTOR, MULTIPLE-...

TECHNOLOGIES FOR PEROVSKITE TRANSISTORS

TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN

TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC

VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES

INTEGRATED CIRCUIT (IC) DEVICE WITH MULTILAYER METAL LINE