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Matthew Wayne Oonk
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Poughkeepsie, NY, US
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Patents Grants
last 30 patents
Information
Patent Grant
Via contact structure having dual silicide layers
Patent number
8,288,828
Issue date
Oct 16, 2012
International Business Machines Corporation
Michael M. Iwatake
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of room temperature growth of SiOx on silicide as an etch st...
Patent number
7,538,029
Issue date
May 26, 2009
International Business Machines Corporation
Yun-Yu Wang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Thin film transfer join process and multilevel thin film module
Patent number
6,998,327
Issue date
Feb 14, 2006
International Business Machines Corporation
Jeffrey B. Danielson
H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Patents Applications
last 30 patents
Information
Patent Application
Fabrication of via contacts having dual silicide layers
Publication number
20070077753
Publication date
Apr 5, 2007
Michael M. Iwatake
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD OF ROOM TEMPERATURE GROWTH OF SIOx ON SILICIDE AS AN ETCH ST...
Publication number
20070010093
Publication date
Jan 11, 2007
International Business Machines Corporation
Yun-Yu Wang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
DUAL SILICIDE VIA CONTACT STRUCTURE AND PROCESS
Publication number
20060051959
Publication date
Mar 9, 2006
International Business Machines Corporation
Michael M. Iwatake
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Thin film transfer join process and multilevel thin film module
Publication number
20040097078
Publication date
May 20, 2004
International Business Machines Corporation
Jeffrey B. Danielson
H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR