Matthias Bauer

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for epitaxially depositing a material on a substrate by flow...
- Patent number 12,091,749
- Issue date Sep 17, 2024
- Applied Materials, Inc.
- Tetsuya Ishikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Chamber architecture for epitaxial deposition and advanced epitaxia...
- Patent number 12,060,651
- Issue date Aug 13, 2024
- Applied Materials, Inc.
- Tetsuya Ishikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for GAA I/O formation by selective epi regrowth
- Patent number 12,027,607
- Issue date Jul 2, 2024
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas injector for epitaxy and CVD chamber
- Patent number 12,018,372
- Issue date Jun 25, 2024
- Applied Materials, Inc.
- Tetsuya Ishikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Multi-channel flow ratio controller and processing chamber
- Patent number 11,537,151
- Issue date Dec 27, 2022
- Applied Materials, Inc.
- Matthias Bauer
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for GAA I/O formation by selective epi regrowth
- Patent number 11,393,916
- Issue date Jul 19, 2022
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated CMOS source drain formation with advanced control
- Patent number 11,309,404
- Issue date Apr 19, 2022
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact integration and selective silicide formation methods
- Patent number 10,964,544
- Issue date Mar 30, 2021
- Applied Materials, Inc.
- Matthias Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-channel flow ratio controller and processing chamber
- Patent number 10,691,145
- Issue date Jun 23, 2020
- Applied Materials, Inc.
- Matthias Bauer
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Forming non-line-of-sight source drain extension in an NMOS FINFET...
- Patent number 10,483,355
- Issue date Nov 19, 2019
- Applied Materials, Inc.
- Matthias Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for titanium silicide formation using TiCl4 precursor and s...
- Patent number 10,312,096
- Issue date Jun 4, 2019
- Applied Materials, Inc.
- Hua Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact integration and selective silicide formation methods
- Patent number 10,103,028
- Issue date Oct 16, 2018
- Applied Materials, Inc.
- Matthias Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming non-line-of-sight source drain extension in an nMOS finFET...
- Patent number 9,853,129
- Issue date Dec 26, 2017
- Applied Materials, Inc.
- Matthias Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer epitaxy for semiconductor gate stack layer for advance...
- Patent number 9,455,143
- Issue date Sep 27, 2016
- Applied Materials, Inc.
- Swaminathan T. Srinivasan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GAS INJECTOR FOR EPITAXY AND CVD CHAMBER
- Publication number 20240337020
- Publication date Oct 10, 2024
- Applied Materials, Inc.
- Tetsuya ISHIKAWA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CHAMBER ARCHITECTURE FOR EPITAXIAL DEPOSITION AND ADVANCED EPITAXIA...
- Publication number 20240209544
- Publication date Jun 27, 2024
- Applied Materials, Inc.
- Tetsuya ISHIKAWA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MULTI-ZONE LAMP HEATING AND TEMPERATURE MONITORING IN EPITAXY PROCE...
- Publication number 20220367216
- Publication date Nov 17, 2022
- Applied Materials, Inc.
- Tetsuya ISHIKAWA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MULTI-PORT EXHAUST SYSTEM FOR EPITAXIAL DEPOSITION CHAMBER
- Publication number 20220364229
- Publication date Nov 17, 2022
- Applied Materials, Inc.
- Tetsuya ISHIKAWA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CHAMBER ARCHITECTURE FOR EPITAXIAL DEPOSITION AND ADVANCED EPITAXIA...
- Publication number 20220364261
- Publication date Nov 17, 2022
- Applied Materials, Inc.
- Tetsuya ISHIKAWA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
GAS INJECTOR FOR EPITAXY AND CVD CHAMBER
- Publication number 20220364231
- Publication date Nov 17, 2022
- Applied Materials, Inc.
- Tetsuya ISHIKAWA
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
METHODS FOR GAA I/O FORMATION BY SELECTIVE EPI REGROWTH
- Publication number 20220320318
- Publication date Oct 6, 2022
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated CMOS Source Drain Formation With Advanced Control
- Publication number 20220199804
- Publication date Jun 23, 2022
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR GAA I/O FORMATION BY SELECTIVE EPI REGROWTH
- Publication number 20210119021
- Publication date Apr 22, 2021
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-CHANNEL FLOW RATIO CONTROLLER AND PROCESSING CHAMBER
- Publication number 20200241580
- Publication date Jul 30, 2020
- Applied Materials, Inc.
- Matthias BAUER
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Integrated CMOS Source Drain Formation With Advanced Control
- Publication number 20200013878
- Publication date Jan 9, 2020
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT INTEGRATION AND SELECTIVE SILICIDE FORMATION METHODS
- Publication number 20190051531
- Publication date Feb 14, 2019
- Applied Materials, Inc.
- Matthias BAUER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING NON-LINE-OF-SIGHT SOURCE DRAIN EXTENSION IN AN NMOS FINFET...
- Publication number 20180240893
- Publication date Aug 23, 2018
- Applied Materials, Inc.
- Matthias BAUER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR SILICIDE FORMATION
- Publication number 20180166288
- Publication date Jun 14, 2018
- Applied Materials, Inc.
- Hua CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-CHANNEL FLOW RATIO CONTROLLER AND PROCESSING CHAMBER
- Publication number 20180095480
- Publication date Apr 5, 2018
- Applied Materials, Inc.
- Matthias BAUER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT INTEGRATION AND SELECTIVE SILICIDE FORMATION METHODS
- Publication number 20180076041
- Publication date Mar 15, 2018
- Applied Materials, Inc.
- Matthias BAUER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING NON-LINE-OF-SIGHT SOURCE DRAIN EXTENSION IN AN NMOS FINFET...
- Publication number 20180069100
- Publication date Mar 8, 2018
- Applied Materials, Inc.
- Matthias BAUER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING NON-LINE-OF-SIGHT SOURCE DRAIN EXTENSION IN AN NMOS FINFET...
- Publication number 20170330960
- Publication date Nov 16, 2017
- Applied Materials, Inc.
- Matthias BAUER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER EPITAXY FOR SEMICONDUCTOR GATE STACK LAYER FOR ADVANCE...
- Publication number 20170011917
- Publication date Jan 12, 2017
- Applied Materials, Inc.
- Swaminathan T. SRINIVASAN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ATOMIC LAYER EPITAXY FOR SEMICONDUCTOR GATE STACK LAYER FOR ADVANCE...
- Publication number 20160013046
- Publication date Jan 14, 2016
- Applied Materials, Inc.
- SWAMINATHAN T. SRINIVASAN
- H01 - BASIC ELECTRIC ELEMENTS

Matthias Bauer

Person

Patents Grantslast 30 patents

Method for epitaxially depositing a material on a substrate by flow...

Chamber architecture for epitaxial deposition and advanced epitaxia...

Methods for GAA I/O formation by selective epi regrowth

Gas injector for epitaxy and CVD chamber

Multi-channel flow ratio controller and processing chamber

Methods for GAA I/O formation by selective epi regrowth

Integrated CMOS source drain formation with advanced control

Contact integration and selective silicide formation methods

Multi-channel flow ratio controller and processing chamber

Forming non-line-of-sight source drain extension in an NMOS FINFET...

Methods for titanium silicide formation using TiCl4 precursor and s...

Contact integration and selective silicide formation methods

Forming non-line-of-sight source drain extension in an nMOS finFET...

Atomic layer epitaxy for semiconductor gate stack layer for advance...

Patents Applicationslast 30 patents

GAS INJECTOR FOR EPITAXY AND CVD CHAMBER

CHAMBER ARCHITECTURE FOR EPITAXIAL DEPOSITION AND ADVANCED EPITAXIA...

MULTI-ZONE LAMP HEATING AND TEMPERATURE MONITORING IN EPITAXY PROCE...

MULTI-PORT EXHAUST SYSTEM FOR EPITAXIAL DEPOSITION CHAMBER

CHAMBER ARCHITECTURE FOR EPITAXIAL DEPOSITION AND ADVANCED EPITAXIA...

GAS INJECTOR FOR EPITAXY AND CVD CHAMBER

METHODS FOR GAA I/O FORMATION BY SELECTIVE EPI REGROWTH

Integrated CMOS Source Drain Formation With Advanced Control

METHODS FOR GAA I/O FORMATION BY SELECTIVE EPI REGROWTH

MULTI-CHANNEL FLOW RATIO CONTROLLER AND PROCESSING CHAMBER

Integrated CMOS Source Drain Formation With Advanced Control

CONTACT INTEGRATION AND SELECTIVE SILICIDE FORMATION METHODS

FORMING NON-LINE-OF-SIGHT SOURCE DRAIN EXTENSION IN AN NMOS FINFET...

METHODS FOR SILICIDE FORMATION

MULTI-CHANNEL FLOW RATIO CONTROLLER AND PROCESSING CHAMBER

CONTACT INTEGRATION AND SELECTIVE SILICIDE FORMATION METHODS

FORMING NON-LINE-OF-SIGHT SOURCE DRAIN EXTENSION IN AN NMOS FINFET...

FORMING NON-LINE-OF-SIGHT SOURCE DRAIN EXTENSION IN AN NMOS FINFET...

ATOMIC LAYER EPITAXY FOR SEMICONDUCTOR GATE STACK LAYER FOR ADVANCE...

ATOMIC LAYER EPITAXY FOR SEMICONDUCTOR GATE STACK LAYER FOR ADVANCE...