Matthias G. Gottwald

Person

Yorktown Heights, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Paramagnetic hexagonal metal phase coupling spacer
- Patent number 12,108,686
- Issue date Oct 1, 2024
- International Business Machines Corporation
- Alexander Reznicek
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random-access memory device
- Patent number 11,569,438
- Issue date Jan 31, 2023
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction based true random number generator
- Patent number 11,487,508
- Issue date Nov 1, 2022
- International Business Machines Corporation
- Rasit O. Topaloglu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Computing devices containing magnetic Josephson Junctions with embe...
- Patent number 11,309,479
- Issue date Apr 19, 2022
- International Business Machines Corporation
- Steven J. Holmes
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
MTJ stack containing a top magnetic pinned layer having strong perp...
- Patent number 11,302,372
- Issue date Apr 12, 2022
- International Business Machines Corporation
- Seonghoon Woo
- G11 - INFORMATION STORAGE
Information Patent Grant
MTJ capping layer structure for improved write error rate slopes an...
- Patent number 11,251,360
- Issue date Feb 15, 2022
- International Business Machines Corporation
- Matthias Georg Gottwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating embedded magnetoresistive random access memory device w...
- Patent number 10,937,828
- Issue date Mar 2, 2021
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top pinned MTJ stack with synthetic anti-ferromagnetic free layer a...
- Patent number 10,804,319
- Issue date Oct 13, 2020
- International Business Machines Corporation
- Matthias G. Gottwald
- G11 - INFORMATION STORAGE
Information Patent Grant
Double MTJ stack with synthetic anti-ferromagnetic free layer and A...
- Patent number 10,692,927
- Issue date Jun 23, 2020
- International Business Machines Corporation
- Matthias G. Gottwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure multilayers having a dusting material at an...
- Patent number 10,340,446
- Issue date Jul 2, 2019
- International Business Machines Corporation
- Matthias Georg Gottwald
- G11 - INFORMATION STORAGE
Information Patent Grant
Double magnetic tunnel junction with dynamic reference layer
- Patent number 10,079,337
- Issue date Sep 18, 2018
- International Business Machines Corporation
- Matthias G. Gottwald
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FREE LAYER IN MAGNETORESISTIVE RANDOM-ACCESS MEMORY
- Publication number 20250040444
- Publication date Jan 30, 2025
- International Business Machines Corporation
- MATTHIAS GEORG GOTTWALD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEXTURED COBALT ALUMINUM/MAGNESIUM-ALUMINUM-OXIDE PEDESTAL FOR MEMO...
- Publication number 20240357942
- Publication date Oct 24, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION FREE LAYER OF MULTIPLE MATERIALS
- Publication number 20240334837
- Publication date Oct 3, 2024
- International Business Machines Corporation
- Matthias Georg Gottwald
Information Patent Application
ORDERED ALLOY MAGNETIC TUNNEL JUNCTION WITH SIMPLIFIED SEED STRUCTURE
- Publication number 20240244982
- Publication date Jul 18, 2024
- International Business Machines Corporation
- Guohan Hu
Information Patent Application
REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-AC...
- Publication number 20240196755
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Matthias Georg Gottwald
- G11 - INFORMATION STORAGE
Information Patent Application
FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAY...
- Publication number 20240164219
- Publication date May 16, 2024
- International Business Machines Corporation
- Matthias Georg Gottwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CoFeB Based Magnetic Tunnel Junction Device with Boron Encapsulatio...
- Publication number 20240122076
- Publication date Apr 11, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARAMAGNETIC HEXAGONAL METAL PHASE COUPLING SPACER
- Publication number 20230189658
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICE
- Publication number 20210296574
- Publication date Sep 23, 2021
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MTJ STACK WITH SELF-ORDERING TOP MAGNETIC FREE LAYER WITH TETRAGONA...
- Publication number 20210273155
- Publication date Sep 2, 2021
- International Business Machines Corporation
- Matthias Georg GOTTWALD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MTJ STACK CONTAINING A TOP MAGNETIC PINNED LAYER HAVING STRONG PERP...
- Publication number 20210249060
- Publication date Aug 12, 2021
- International Business Machines Corporation
- Seonghoon Woo
- G11 - INFORMATION STORAGE
Information Patent Application
MTJ CAPPING LAYER STRUCTURE FOR IMPROVED WRITE ERROR RATE SLOPES AN...
- Publication number 20210249588
- Publication date Aug 12, 2021
- International Business Machines Corporation
- Matthias Georg Gottwald
- G11 - INFORMATION STORAGE
Information Patent Application
COMPUTING DEVICES CONTAINING MAGNETIC JOSEPHSON JUNCTIONS WITH EMBE...
- Publication number 20210175407
- Publication date Jun 10, 2021
- International Business Machines Corporation
- Steven J. Holmes
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETIC TUNNEL JUNCTION BASED TRUE RANDOM NUMBER GENERATOR
- Publication number 20200326911
- Publication date Oct 15, 2020
- International Business Machines Corporation
- Rasit O. Topaloglu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TOP PINNED MTJ STACK WITH SYNTHETIC ANTI-FERROMAGNETIC FREE LAYER A...
- Publication number 20200266236
- Publication date Aug 20, 2020
- International Business Machines Corporation
- Matthias G. Gottwald
- G11 - INFORMATION STORAGE
Information Patent Application
FABRICATING EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE W...
- Publication number 20200119088
- Publication date Apr 16, 2020
- International Business Machines Corporation
- Pouya HASHEMI
- G11 - INFORMATION STORAGE
Information Patent Application
OPTIMIZED PERPENDICULAR MAGNETIC FREE LAYER STACK WITH A CRYSTALLIN...
- Publication number 20200106003
- Publication date Apr 2, 2020
- International Business Machines Corporation
- Matthias Georg Gottwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR MRAM FREE LAYER WITH NB OXIDE CONTAINING CAPPING LAYER
- Publication number 20200066969
- Publication date Feb 27, 2020
- International Business Machines Corporation
- Matthias Georg GOTTWALD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE MAGNETIC TUNNEL JUNCTION WITH DYNAMIC REFERENCE LAYER
- Publication number 20180198058
- Publication date Jul 12, 2018
- International Business Machines Corporation
- Matthias G. Gottwald
- H01 - BASIC ELECTRIC ELEMENTS

Matthias G. Gottwald

Person

Patents Grantslast 30 patents

Paramagnetic hexagonal metal phase coupling spacer

Magnetoresistive random-access memory device

Magnetic tunnel junction based true random number generator

Computing devices containing magnetic Josephson Junctions with embe...

MTJ stack containing a top magnetic pinned layer having strong perp...

MTJ capping layer structure for improved write error rate slopes an...

Fabricating embedded magnetoresistive random access memory device w...

Top pinned MTJ stack with synthetic anti-ferromagnetic free layer a...

Double MTJ stack with synthetic anti-ferromagnetic free layer and A...

Semiconductor structure multilayers having a dusting material at an...

Double magnetic tunnel junction with dynamic reference layer

Patents Applicationslast 30 patents

FREE LAYER IN MAGNETORESISTIVE RANDOM-ACCESS MEMORY

TEXTURED COBALT ALUMINUM/MAGNESIUM-ALUMINUM-OXIDE PEDESTAL FOR MEMO...

MAGNETIC TUNNEL JUNCTION FREE LAYER OF MULTIPLE MATERIALS

ORDERED ALLOY MAGNETIC TUNNEL JUNCTION WITH SIMPLIFIED SEED STRUCTURE

REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-AC...

FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAY...

CoFeB Based Magnetic Tunnel Junction Device with Boron Encapsulatio...

PARAMAGNETIC HEXAGONAL METAL PHASE COUPLING SPACER

MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICE

MTJ STACK WITH SELF-ORDERING TOP MAGNETIC FREE LAYER WITH TETRAGONA...

MTJ STACK CONTAINING A TOP MAGNETIC PINNED LAYER HAVING STRONG PERP...

MTJ CAPPING LAYER STRUCTURE FOR IMPROVED WRITE ERROR RATE SLOPES AN...

COMPUTING DEVICES CONTAINING MAGNETIC JOSEPHSON JUNCTIONS WITH EMBE...

MAGNETIC TUNNEL JUNCTION BASED TRUE RANDOM NUMBER GENERATOR

TOP PINNED MTJ STACK WITH SYNTHETIC ANTI-FERROMAGNETIC FREE LAYER A...

FABRICATING EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE W...

OPTIMIZED PERPENDICULAR MAGNETIC FREE LAYER STACK WITH A CRYSTALLIN...

PERPENDICULAR MRAM FREE LAYER WITH NB OXIDE CONTAINING CAPPING LAYER

DOUBLE MAGNETIC TUNNEL JUNCTION WITH DYNAMIC REFERENCE LAYER