Matthias Georg Gottwald

Person

Leuven, BE

People

Patents Grantslast 30 patents

Information Patent Grant
Ultrathin perpendicular pinned layer structure for magnetic tunneli...
- Patent number 10,103,319
- Issue date Oct 16, 2018
- QUALCOMM Incorporated
- Kangho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction (MTJ) device array
- Patent number 9,728,718
- Issue date Aug 8, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultrathin perpendicular pinned layer structure for magnetic tunneli...
- Patent number 9,634,237
- Issue date Apr 25, 2017
- QUALCOMM Incorporated
- Kangho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic etch stop layer for spin-transfer torque magnetoresistive...
- Patent number 9,620,706
- Issue date Apr 11, 2017
- QUALCOMM Incorporated
- Kangho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating smooth seed layers with uniform crystalline t...
- Patent number 9,595,666
- Issue date Mar 14, 2017
- QUALCOMM Incorporated
- Matthias Georg Gottwald
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular magnetic tunnel junction (pMTJ) devices employing a t...
- Patent number 9,590,010
- Issue date Mar 7, 2017
- QUALCOMM Incorporated
- Matthias Georg Gottwald
- G11 - INFORMATION STORAGE
Information Patent Grant
Reference layer for perpendicular magnetic anisotropy magnetic tunn...
- Patent number 9,583,696
- Issue date Feb 28, 2017
- QUALCOMM Incorporated
- Matthias Georg Gottwald
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction (MTJ) device array
- Patent number 9,570,509
- Issue date Feb 14, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Synthetic antiferromagnet (SAF) coupled free layer for perpendicula...
- Patent number 9,548,446
- Issue date Jan 17, 2017
- QUALCOMM Incorporated
- Chando Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnesium oxide capping with a shorted path for perpendicular magne...
- Patent number 9,444,035
- Issue date Sep 13, 2016
- QUALCOMM Incorporated
- Chando Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Smooth seed layers with uniform crystalline texture for high perpen...
- Patent number 9,385,309
- Issue date Jul 5, 2016
- QUALCOMM Incorporated
- Matthias Georg Gottwald
- G11 - INFORMATION STORAGE
Information Patent Grant
Synthetic antiferromagnet (SAF) coupled free layer for perpendicula...
- Patent number 9,324,939
- Issue date Apr 26, 2016
- QUALCOMM Incorporated
- Chando Park
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ULTRATHIN PERPENDICULAR PINNED LAYER STRUCTURE FOR MAGNETIC TUNNELI...
- Publication number 20170186942
- Publication date Jun 29, 2017
- QUALCOMM Incorporated
- Kangho LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE ARRAY
- Publication number 20170104153
- Publication date Apr 13, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES PARTICULARLY SUITED FOR EFFI...
- Publication number 20170077387
- Publication date Mar 16, 2017
- QUALCOMM Incorporated
- Jimmy Jianan Kan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC FIELD ENHANCING BACKING PLATE FOR MRAM WAFER TESTING
- Publication number 20170059669
- Publication date Mar 2, 2017
- QUALCOMM Incorporated
- Jimmy Kan
- G01 - MEASURING TESTING
Information Patent Application
SMOOTH SEED LAYERS WITH UNIFORM CRYSTALLINE TEXTURE FOR HIGH PERPEN...
- Publication number 20160284988
- Publication date Sep 29, 2016
- QUALCOMM Incorporated
- Matthias Georg GOTTWALD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNTHETIC ANTIFERROMAGNET (SAF) COUPLED FREE LAYER FOR PERPENDICULA...
- Publication number 20160233418
- Publication date Aug 11, 2016
- QUALCOMM Incorporated
- Chando PARK
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE ARRAY
- Publication number 20160225817
- Publication date Aug 4, 2016
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRATHIN PERPENDICULAR PINNED LAYER STRUCTURE FOR MAGNETIC TUNNELI...
- Publication number 20160181508
- Publication date Jun 23, 2016
- QUALCOMM Incorporated
- Kangho LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC ETCH STOP LAYER FOR SPIN-TRANSFER TORQUE MAGNETORESISTIVE...
- Publication number 20160155931
- Publication date Jun 2, 2016
- QUALCOMM Incorporated
- Kangho LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNESIUM OXIDE CAPPING WITH A SHORTED PATH FOR PERPENDICULAR MAGNE...
- Publication number 20160072043
- Publication date Mar 10, 2016
- QUALCOMM Incorporated
- Chando PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNTHETIC ANTIFERROMAGNET (SAF) COUPLED FREE LAYER FOR PERPENDICULA...
- Publication number 20160005955
- Publication date Jan 7, 2016
- QUALCOMM Incorporated
- Chando PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SMOOTH SEED LAYERS WITH UNIFORM CRYSTALLINE TEXTURE FOR HIGH PERPEN...
- Publication number 20150311427
- Publication date Oct 29, 2015
- QUALCOMM Incorporated
- Matthias Georg GOTTWALD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REFERENCE LAYER FOR PERPENDICULAR MAGNETIC ANISOTROPY MAGNETIC TUNN...
- Publication number 20150263266
- Publication date Sep 17, 2015
- QUALCOMM Incorporated
- Matthias Georg Gottwald
- G11 - INFORMATION STORAGE

Matthias Georg Gottwald

Person

Patents Grantslast 30 patents

Ultrathin perpendicular pinned layer structure for magnetic tunneli...

Magnetic tunnel junction (MTJ) device array

Ultrathin perpendicular pinned layer structure for magnetic tunneli...

Magnetic etch stop layer for spin-transfer torque magnetoresistive...

Method of fabricating smooth seed layers with uniform crystalline t...

Perpendicular magnetic tunnel junction (pMTJ) devices employing a t...

Reference layer for perpendicular magnetic anisotropy magnetic tunn...

Magnetic tunnel junction (MTJ) device array

Synthetic antiferromagnet (SAF) coupled free layer for perpendicula...

Magnesium oxide capping with a shorted path for perpendicular magne...

Smooth seed layers with uniform crystalline texture for high perpen...

Synthetic antiferromagnet (SAF) coupled free layer for perpendicula...

Patents Applicationslast 30 patents

ULTRATHIN PERPENDICULAR PINNED LAYER STRUCTURE FOR MAGNETIC TUNNELI...

MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE ARRAY

MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES PARTICULARLY SUITED FOR EFFI...

MAGNETIC FIELD ENHANCING BACKING PLATE FOR MRAM WAFER TESTING

SMOOTH SEED LAYERS WITH UNIFORM CRYSTALLINE TEXTURE FOR HIGH PERPEN...

SYNTHETIC ANTIFERROMAGNET (SAF) COUPLED FREE LAYER FOR PERPENDICULA...

MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE ARRAY

ULTRATHIN PERPENDICULAR PINNED LAYER STRUCTURE FOR MAGNETIC TUNNELI...

MAGNETIC ETCH STOP LAYER FOR SPIN-TRANSFER TORQUE MAGNETORESISTIVE...

MAGNESIUM OXIDE CAPPING WITH A SHORTED PATH FOR PERPENDICULAR MAGNE...

SYNTHETIC ANTIFERROMAGNET (SAF) COUPLED FREE LAYER FOR PERPENDICULA...

SMOOTH SEED LAYERS WITH UNIFORM CRYSTALLINE TEXTURE FOR HIGH PERPEN...

REFERENCE LAYER FOR PERPENDICULAR MAGNETIC ANISOTROPY MAGNETIC TUNN...