Matthias Passlack

Person

Huldenberg, BE

People

Patents Grantslast 30 patents

Information Patent Grant
Fin-based field effect transistors
- Patent number 12,154,903
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-sheet FinFET device
- Patent number 12,015,083
- Issue date Jun 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mark van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Steep sloped vertical tunnel field-effect transistor
- Patent number 11,355,590
- Issue date Jun 7, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Peter Ramvall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based field effect transistors
- Patent number 11,257,818
- Issue date Feb 22, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel field-effect transistor and method for forming the same
- Patent number 11,164,939
- Issue date Nov 2, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Peter Ramvall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method of manufacturing the same
- Patent number 11,158,807
- Issue date Oct 26, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Timothy Vasen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a field effect transistor using carbon nano...
- Patent number 11,088,246
- Issue date Aug 10, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystalline semiconductor layer formed in BEOL processes
- Patent number 10,991,576
- Issue date Apr 27, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-sheet FinFET device
- Patent number 10,937,908
- Issue date Mar 2, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mark van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor structure
- Patent number 10,923,581
- Issue date Feb 16, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafers for use in aligning nanotubes and methods of making and usin...
- Patent number 10,923,659
- Issue date Feb 16, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Timothy Vasen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,868,154
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Peter Ramvall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V semiconductor layers, III-V semiconductor devices and methods...
- Patent number 10,797,148
- Issue date Oct 6, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mark Van Dal
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing a field effect transistor using carbon nano...
- Patent number 10,727,427
- Issue date Jul 28, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Timothy Vasen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V semiconductor layers, III-V semiconductor device and methods...
- Patent number 10,680,062
- Issue date Jun 9, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mark Van Dal
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tunnel field-effect transistor with reduced trap-assisted tunneling...
- Patent number 10,672,899
- Issue date Jun 2, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Timothy Vasen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Steep sloped vertical tunnel field-effect transistor
- Patent number 10,636,878
- Issue date Apr 28, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Peter Ramvall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,516,039
- Issue date Dec 24, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Peter Ramvall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire fabrication method and structure thereof
- Patent number 10,510,533
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Company Limited
- Martin C. Holland
- C30 - CRYSTAL GROWTH
Information Patent Grant
Tunnel field-effect transistor and method for forming the same
- Patent number 10,505,025
- Issue date Dec 10, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V semiconductor layers, III-V semiconductor devices and methods...
- Patent number 10,475,897
- Issue date Nov 12, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mark Van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V semiconductor layers, III-V semiconductor devices and methods...
- Patent number 10,263,073
- Issue date Apr 16, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mark Van Dal
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device channel system and method
- Patent number 10,050,111
- Issue date Aug 14, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V semiconductor layers, III-V semiconductor devices and methods...
- Patent number 9,876,088
- Issue date Jan 23, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mark Van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and FinFET devices
- Patent number 9,768,263
- Issue date Sep 19, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device channel system and method
- Patent number 9,735,239
- Issue date Aug 15, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-sheet FinFET device
- Patent number 9,711,647
- Issue date Jul 18, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mark van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor dielectric interface and gate stack
- Patent number 9,646,823
- Issue date May 9, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Hsun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire fabrication method and structure thereof
- Patent number 9,601,571
- Issue date Mar 21, 2017
- Taiwan Semiconductor Manufacturing Company Limited
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with channel backside passivation layer device and method
- Patent number 9,412,871
- Issue date Aug 9, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Fin-Based Field Effect Transistors
- Publication number 20240395818
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthias PASSLACK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN-SHEET FINFET DEVICE
- Publication number 20240339537
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mark van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-BASED FIELD EFFECT TRANSISTORS
- Publication number 20220173102
- Publication date Jun 2, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Matthias PASSLACK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin-Sheet FinFET Device
- Publication number 20210184029
- Publication date Jun 17, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mark van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20210119131
- Publication date Apr 22, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Timothy Vasen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A FIELD EFFECT TRANSISTOR USING CARBON NANO...
- Publication number 20210020745
- Publication date Jan 21, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Matthias PASSLACK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STEEP SLOPED VERTICAL TUNNEL FIELD-EFFECT TRANSISTOR
- Publication number 20200227524
- Publication date Jul 16, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peter Ramvall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTALLINE SEMICONDUCTOR LAYER FORMED IN BEOL PROCESSES
- Publication number 20200135930
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20200135906
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peter RAMVALL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFERS FOR USE IN ALIGNING NANOTUBES AND METHODS OF MAKING AND USIN...
- Publication number 20200106014
- Publication date Apr 2, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Timothy Vasen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FIN-BASED FIELD EFFECT TRANSISTORS
- Publication number 20200105760
- Publication date Apr 2, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Matthias PASSLACK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
- Publication number 20200098898
- Publication date Mar 26, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Gerben DOORNBOS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A FIELD EFFECT TRANSISTOR USING CARBON NANO...
- Publication number 20200075875
- Publication date Mar 5, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Timothy VASEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V SEMICONDUCTOR LAYERS, III-V SEMICONDUCTOR DEVICES AND METHODS...
- Publication number 20200058750
- Publication date Feb 20, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mark VAN DAL
- B82 - NANO-TECHNOLOGY
Information Patent Application
TUNNEL FIELD-EFFECT TRANSISTOR WITH REDUCED TRAP-ASSISTED TUNNELING...
- Publication number 20200006542
- Publication date Jan 2, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Timothy Vasen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL FIELD-EFFECT TRANSISTOR AND METHOD FOR FORMING THE SAME
- Publication number 20200006473
- Publication date Jan 2, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peter RAMVALL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STEEP SLOPED VERTICAL TUNNEL FIELD-EFFECT TRANSISTOR
- Publication number 20190355818
- Publication date Nov 21, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peter Ramvall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V SEMICONDUCTOR LAYERS, III-V SEMICONDUCTOR DEVICE AND METHODS...
- Publication number 20190245037
- Publication date Aug 8, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mark VAN DAL
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20190165149
- Publication date May 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peter RAMVALL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V SEMICONDUCTOR LAYERS, III-V SEMICONDUCTOR DEVICES AND METHODS...
- Publication number 20180151669
- Publication date May 31, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mark VAN DAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V SEMICONDUCTOR LAYERS, III-V SEMICONDUCTOR DEVICES AND METHODS...
- Publication number 20180108747
- Publication date Apr 19, 2018
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Mark VAN DAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Channel System and Method
- Publication number 20170365668
- Publication date Dec 21, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin-Sheet FinFET Device
- Publication number 20170317206
- Publication date Nov 2, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mark van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanowire Fabrication Method and Structure Thereof
- Publication number 20170194140
- Publication date Jul 6, 2017
- Taiwan Semiconductor Manufacturing Company Limited
- Martin C. Holland
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICES AND FINFET DEVICES
- Publication number 20160225858
- Publication date Aug 4, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE FABRICATION METHOD AND STRUCTURE THEREOF
- Publication number 20160099312
- Publication date Apr 7, 2016
- Taiwan Semiconductor Manufacturing Company Limited
- MARTIN C HOLLAND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin-Sheet FinFET Device
- Publication number 20150364592
- Publication date Dec 17, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mark van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Semiconductor Devices and FinFET Devices, and Fi...
- Publication number 20150255545
- Publication date Sep 10, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Dielectric Interface and Gate Stack
- Publication number 20140353771
- Publication date Dec 4, 2014
- Chien-Hsun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET with Channel Backside Passivation Layer Device and Method
- Publication number 20140252478
- Publication date Sep 11, 2014
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS

Matthias Passlack

Person

Patents Grantslast 30 patents

Fin-based field effect transistors

Thin-sheet FinFET device

Steep sloped vertical tunnel field-effect transistor

Fin-based field effect transistors

Tunnel field-effect transistor and method for forming the same

Field effect transistor and method of manufacturing the same

Method of manufacturing a field effect transistor using carbon nano...

Crystalline semiconductor layer formed in BEOL processes

Thin-sheet FinFET device

Method for forming semiconductor structure

Wafers for use in aligning nanotubes and methods of making and usin...

Semiconductor device and manufacturing method thereof

III-V semiconductor layers, III-V semiconductor devices and methods...

Method of manufacturing a field effect transistor using carbon nano...

III-V semiconductor layers, III-V semiconductor device and methods...

Tunnel field-effect transistor with reduced trap-assisted tunneling...

Steep sloped vertical tunnel field-effect transistor

Semiconductor device and manufacturing method thereof

Nanowire fabrication method and structure thereof

Tunnel field-effect transistor and method for forming the same

III-V semiconductor layers, III-V semiconductor devices and methods...

III-V semiconductor layers, III-V semiconductor devices and methods...

Semiconductor device channel system and method

III-V semiconductor layers, III-V semiconductor devices and methods...

Semiconductor devices and FinFET devices

Semiconductor device channel system and method

Thin-sheet FinFET device

Semiconductor dielectric interface and gate stack

Nanowire fabrication method and structure thereof

FinFET with channel backside passivation layer device and method

Patents Applicationslast 30 patents

Fin-Based Field Effect Transistors

THIN-SHEET FINFET DEVICE

FIN-BASED FIELD EFFECT TRANSISTORS

Thin-Sheet FinFET Device

FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

METHOD OF MANUFACTURING A FIELD EFFECT TRANSISTOR USING CARBON NANO...

STEEP SLOPED VERTICAL TUNNEL FIELD-EFFECT TRANSISTOR

CRYSTALLINE SEMICONDUCTOR LAYER FORMED IN BEOL PROCESSES

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

WAFERS FOR USE IN ALIGNING NANOTUBES AND METHODS OF MAKING AND USIN...

FIN-BASED FIELD EFFECT TRANSISTORS

METHOD FOR FORMING SEMICONDUCTOR STRUCTURE

METHOD OF MANUFACTURING A FIELD EFFECT TRANSISTOR USING CARBON NANO...

III-V SEMICONDUCTOR LAYERS, III-V SEMICONDUCTOR DEVICES AND METHODS...

TUNNEL FIELD-EFFECT TRANSISTOR WITH REDUCED TRAP-ASSISTED TUNNELING...

TUNNEL FIELD-EFFECT TRANSISTOR AND METHOD FOR FORMING THE SAME

STEEP SLOPED VERTICAL TUNNEL FIELD-EFFECT TRANSISTOR

III-V SEMICONDUCTOR LAYERS, III-V SEMICONDUCTOR DEVICE AND METHODS...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

III-V SEMICONDUCTOR LAYERS, III-V SEMICONDUCTOR DEVICES AND METHODS...

III-V SEMICONDUCTOR LAYERS, III-V SEMICONDUCTOR DEVICES AND METHODS...

Semiconductor Device Channel System and Method

Thin-Sheet FinFET Device

Nanowire Fabrication Method and Structure Thereof

SEMICONDUCTOR DEVICES AND FINFET DEVICES

NANOWIRE FABRICATION METHOD AND STRUCTURE THEREOF

Thin-Sheet FinFET Device

Methods of Forming Semiconductor Devices and FinFET Devices, and Fi...

Semiconductor Dielectric Interface and Gate Stack

FinFET with Channel Backside Passivation Layer Device and Method