Matthias Passlack

Person

Hsin-Chu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Steep sloped vertical tunnel field-effect transistor
- Patent number 12,107,126
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Peter Ramvall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystalline semiconductor layer formed in BEOL processes
- Patent number 12,051,702
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystalline semiconductor layer formed in BEOL processes
- Patent number 11,587,786
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel field-effect transistor with reduced trap-assisted tunneling...
- Patent number 11,349,022
- Issue date May 31, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Timothy Vasen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunnel field effect transistor (FET)
- Patent number 10,872,972
- Issue date Dec 22, 2020
- Taiwan Semiconductor Manufacturing Company Limited
- Krishna Kumar Bhuwalka
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical tunnel field effect transistor (FET)
- Patent number 10,475,907
- Issue date Nov 12, 2019
- Taiwan Semiconductor Manufacturing Company Limited
- Krishna Kumar Bhuwalka
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical tunnel field effect transistor (FET)
- Patent number 9,647,097
- Issue date May 9, 2017
- Taiwan Semiconductor Manufacturing Company Limited
- Krishna Kumar Bhuwalka
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Field effect transistor with conduction band electron channel and u...
- Patent number 9,614,070
- Issue date Apr 4, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthias Passlack
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
CRYSTALLINE SEMICONDUCTOR LAYER FORMED IN BEOL PROCESSES
- Publication number 20230197445
- Publication date Jun 22, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STEEP SLOPED VERTICAL TUNNEL FIELD-EFFECT TRANSISTOR
- Publication number 20220278203
- Publication date Sep 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peter Ramvall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTALLINE SEMICONDUCTOR LAYER FORMED IN BEOL PROCESSES
- Publication number 20210225647
- Publication date Jul 22, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL FIELD-EFFECT TRANSISTOR WITH REDUCED TRAP-ASSISTED TUNNELING...
- Publication number 20200303530
- Publication date Sep 24, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Timothy Vasen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TUNNEL FIELD EFFECT TRANSISTOR (FET)
- Publication number 20200044063
- Publication date Feb 6, 2020
- Taiwan Semiconductor Manufacturing Company Limited
- Krishna Kumar Bhuwalka
- B82 - NANO-TECHNOLOGY
Information Patent Application
VERTICAL TUNNEL FIELD EFFECT TRANSISTOR (FET)
- Publication number 20170243961
- Publication date Aug 24, 2017
- Taiwan Semiconductor Manufacturing Company Limited
- Krishna Kumar Bhuwalka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TUNNEL FIELD EFFECT TRANSISTOR (FET)
- Publication number 20150137079
- Publication date May 21, 2015
- Taiwan Semiconductor Manufacturing Company Limited
- Krishna Kumar Bhuwalka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor with Conduction Band Electron Channel and U...
- Publication number 20150076513
- Publication date Mar 19, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS

Matthias Passlack

Person

Patents Grantslast 30 patents

Steep sloped vertical tunnel field-effect transistor

Crystalline semiconductor layer formed in BEOL processes

Crystalline semiconductor layer formed in BEOL processes

Tunnel field-effect transistor with reduced trap-assisted tunneling...

Vertical tunnel field effect transistor (FET)

Vertical tunnel field effect transistor (FET)

Vertical tunnel field effect transistor (FET)

Field effect transistor with conduction band electron channel and u...

Patents Applicationslast 30 patents

CRYSTALLINE SEMICONDUCTOR LAYER FORMED IN BEOL PROCESSES

STEEP SLOPED VERTICAL TUNNEL FIELD-EFFECT TRANSISTOR

CRYSTALLINE SEMICONDUCTOR LAYER FORMED IN BEOL PROCESSES

TUNNEL FIELD-EFFECT TRANSISTOR WITH REDUCED TRAP-ASSISTED TUNNELING...

VERTICAL TUNNEL FIELD EFFECT TRANSISTOR (FET)

VERTICAL TUNNEL FIELD EFFECT TRANSISTOR (FET)

VERTICAL TUNNEL FIELD EFFECT TRANSISTOR (FET)

Field Effect Transistor with Conduction Band Electron Channel and U...