Mauricio MANFRINI

Person

Leuven, BE

People

Patents Grantslast 30 patents

Information Patent Grant
Rapid thermal annealing (RTA) methodologies for integration of pero...
- Patent number 12,094,923
- Issue date Sep 17, 2024
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Iterative method of multilayer stack development for device applica...
- Patent number 12,062,584
- Issue date Aug 13, 2024
- Kepler Computing Inc.
- Sasikanth Manipatruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level hydrogen barrier layers for memory applications and met...
- Patent number 12,010,854
- Issue date Jun 11, 2024
- Kepler Computing Inc.
- Noriyuki Sato
Information Patent Grant
Method of fabricating a perovskite-material based planar capacitor...
- Patent number 11,908,704
- Issue date Feb 20, 2024
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a perovskite-material based trench capacitor...
- Patent number 11,894,417
- Issue date Feb 6, 2024
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual hydrogen barrier layer for memory devices
- Patent number 11,869,928
- Issue date Jan 9, 2024
- Kepler Computing Inc.
- Noriyuki Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated trench and via electrode for memory device applications...
- Patent number 11,869,843
- Issue date Jan 9, 2024
- Kepler Computing Inc.
- Noriyuki Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-level hydrogen barrier layers for memory applications
- Patent number 11,871,584
- Issue date Jan 9, 2024
- Kepler Computing Inc.
- Noriyuki Sato
Information Patent Grant
Integrated trench and via electrode for memory device applications
- Patent number 11,862,517
- Issue date Jan 2, 2024
- Kepler Computing Inc.
- Noriyuki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive and insulative hydrogen barrier layer for memory devices
- Patent number 11,844,203
- Issue date Dec 12, 2023
- Kepler Computing Inc.
- Noriyuki Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual hydrogen barrier layer for memory devices integrated with low...
- Patent number 11,844,225
- Issue date Dec 12, 2023
- Kepler Computing Inc.
- Noriyuki Sato
Information Patent Grant
High density dual encapsulation materials for capacitors and method...
- Patent number 11,839,070
- Issue date Dec 5, 2023
- Kepler Computing Inc.
- Noriyuki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated via and bridge electrodes for memory array applications...
- Patent number 11,839,088
- Issue date Dec 5, 2023
- Kepler Computing Inc.
- Noriyuki Sato
Information Patent Grant
Rapid thermal annealing (RTA) methodologies for integration of pero...
- Patent number 11,769,790
- Issue date Sep 26, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device fabrication through wafer bonding
- Patent number 11,765,908
- Issue date Sep 19, 2023
- Kepler Computing Inc.
- Mauricio Manfrini
Information Patent Grant
Intercalated metal/dielectric structure for nonvolatile memory devices
- Patent number 11,723,291
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mauricio Manfrini
- G11 - INFORMATION STORAGE
Information Patent Grant
Synapse-inspired memory element for neuromorphic computing
- Patent number 11,586,885
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Marcus Johannes Henricus van Dal
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory cell with unipolar selectors
- Patent number 11,107,859
- Issue date Aug 31, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Katherine H. Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell with magnetic layers for reset operation
- Patent number 11,107,989
- Issue date Aug 31, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mauricio Manfrini
- G11 - INFORMATION STORAGE
Information Patent Grant
Crystalline semiconductor layer formed in BEOL processes
- Patent number 10,991,576
- Issue date Apr 27, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Intercalated metal/dielectric structure for nonvolatile memory devices
- Patent number 10,971,684
- Issue date Apr 6, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mauricio Manfrini
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin torque majority gate device
- Patent number 10,170,687
- Issue date Jan 1, 2019
- Imec VZW
- Johan Swerts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic majority gate device
- Patent number 10,164,077
- Issue date Dec 25, 2018
- Imec VZW
- Adrien Vaysset
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MEMORY DEVICE FABRICATION THROUGH ITERATIVE MULTILAYER ST...
- Publication number 20240347397
- Publication date Oct 17, 2024
- Kepler Computing Inc.
- Sasikanth Manipatruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING MEMORY DEVICES INCLUDING B-SITE DOPANTS AND L...
- Publication number 20240276734
- Publication date Aug 15, 2024
- Kepler Computing Inc.
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING STACKED CAPACITORS THROUGH WAFER BONDING
- Publication number 20240274651
- Publication date Aug 15, 2024
- Kepler Computing Inc.
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING CAPACITORS THROUGH WAFER BONDING
- Publication number 20240276735
- Publication date Aug 15, 2024
- Kepler Computing Inc.
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAIN COUPLED NON-LINEAR POLAR MATERIAL BASED CAPACITORS FOR MEMORY...
- Publication number 20230301113
- Publication date Sep 21, 2023
- Kepler Computing Inc.
- Noriyuki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A PEROVSKITE-MATERIAL BASED PLANAR CAPACITOR...
- Publication number 20230298905
- Publication date Sep 21, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A PEROVSKITE-MATERIAL BASED TRENCH CAPACITOR...
- Publication number 20230246064
- Publication date Aug 3, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAPID THERMAL ANNEALING (RTA) METHODOLOGIES FOR INTEGRATION OF PERO...
- Publication number 20230246063
- Publication date Aug 3, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAPID THERMAL ANNEALING (RTA) METHODOLOGIES FOR INTEGRATION OF PERO...
- Publication number 20230246062
- Publication date Aug 3, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL HYDROGEN BARRIER LAYER FOR MEMORY DEVICES
- Publication number 20230187476
- Publication date Jun 15, 2023
- Kepler Computing Inc.
- Noriyuki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCALATED METAL/DIELECTRIC STRUCTURE FOR NONVOLATILE MEMORY DEVICES
- Publication number 20210242398
- Publication date Aug 5, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Mauricio Manfrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH MAGNETIC LAYERS FOR RESET OPERATION
- Publication number 20210043837
- Publication date Feb 11, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Mauricio Manfrini
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL WITH UNIPOLAR SELECTORS
- Publication number 20210043683
- Publication date Feb 11, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Katherine H. Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
SYNAPSE-INSPIRED MEMORY ELEMENT FOR NEUROMORPHIC COMPUTING
- Publication number 20200311524
- Publication date Oct 1, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Marcus Johannes Henricus van Dal
- B82 - NANO-TECHNOLOGY
Information Patent Application
METAL FILAMENT VIAS FOR INTERCONNECT STRUCTURE
- Publication number 20200176379
- Publication date Jun 4, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Mauricio Manfrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTALLINE SEMICONDUCTOR LAYER FORMED IN BEOL PROCESSES
- Publication number 20200135930
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCALATED METAL/DIELECTRIC STRUCTURE FOR NONVOLATILE MEMORY DEVICES
- Publication number 20200136038
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Mauricio Manfrini
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MAJORITY GATE DEVICE
- Publication number 20180061970
- Publication date Mar 1, 2018
- IMEC vzw
- Adrien Vaysset
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN TORQUE MAJORITY GATE DEVICE
- Publication number 20170179373
- Publication date Jun 22, 2017
- IMEC vzw
- Johan Swerts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MULTILAYER STACK
- Publication number 20150179925
- Publication date Jun 25, 2015
- IMEC vzw
- Taiebeh Tahmasebi
- H01 - BASIC ELECTRIC ELEMENTS

Mauricio MANFRINI

Person

Patents Grantslast 30 patents

Rapid thermal annealing (RTA) methodologies for integration of pero...

Iterative method of multilayer stack development for device applica...

Multi-level hydrogen barrier layers for memory applications and met...

Method of fabricating a perovskite-material based planar capacitor...

Method of fabricating a perovskite-material based trench capacitor...

Dual hydrogen barrier layer for memory devices

Integrated trench and via electrode for memory device applications...

Multi-level hydrogen barrier layers for memory applications

Integrated trench and via electrode for memory device applications

Conductive and insulative hydrogen barrier layer for memory devices

Dual hydrogen barrier layer for memory devices integrated with low...

High density dual encapsulation materials for capacitors and method...

Integrated via and bridge electrodes for memory array applications...

Rapid thermal annealing (RTA) methodologies for integration of pero...

Memory device fabrication through wafer bonding

Intercalated metal/dielectric structure for nonvolatile memory devices

Synapse-inspired memory element for neuromorphic computing

Memory cell with unipolar selectors

Memory cell with magnetic layers for reset operation

Crystalline semiconductor layer formed in BEOL processes

Intercalated metal/dielectric structure for nonvolatile memory devices

Spin torque majority gate device

Magnetic majority gate device

Patents Applicationslast 30 patents

METHOD OF MEMORY DEVICE FABRICATION THROUGH ITERATIVE MULTILAYER ST...

METHOD OF FABRICATING MEMORY DEVICES INCLUDING B-SITE DOPANTS AND L...

METHOD OF FORMING STACKED CAPACITORS THROUGH WAFER BONDING

METHOD OF FORMING CAPACITORS THROUGH WAFER BONDING

DRAIN COUPLED NON-LINEAR POLAR MATERIAL BASED CAPACITORS FOR MEMORY...

METHOD OF FABRICATING A PEROVSKITE-MATERIAL BASED PLANAR CAPACITOR...

METHOD OF FABRICATING A PEROVSKITE-MATERIAL BASED TRENCH CAPACITOR...

RAPID THERMAL ANNEALING (RTA) METHODOLOGIES FOR INTEGRATION OF PERO...

RAPID THERMAL ANNEALING (RTA) METHODOLOGIES FOR INTEGRATION OF PERO...

DUAL HYDROGEN BARRIER LAYER FOR MEMORY DEVICES

INTERCALATED METAL/DIELECTRIC STRUCTURE FOR NONVOLATILE MEMORY DEVICES

MEMORY CELL WITH MAGNETIC LAYERS FOR RESET OPERATION

MEMORY CELL WITH UNIPOLAR SELECTORS

SYNAPSE-INSPIRED MEMORY ELEMENT FOR NEUROMORPHIC COMPUTING

METAL FILAMENT VIAS FOR INTERCONNECT STRUCTURE

CRYSTALLINE SEMICONDUCTOR LAYER FORMED IN BEOL PROCESSES

INTERCALATED METAL/DIELECTRIC STRUCTURE FOR NONVOLATILE MEMORY DEVICES

MAGNETIC MAJORITY GATE DEVICE

SPIN TORQUE MAJORITY GATE DEVICE

MAGNETIC MULTILAYER STACK