Mauricio Manfrini

Person

Zhubei City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Polarization enhancement structure for enlarging memory window
- Patent number 12,176,433
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,159,942
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Marcus Johannes Henricus Van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric MFM capacitor array and methods of making the same
- Patent number 12,154,938
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,148,828
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel junction selector MRAM
- Patent number 12,144,184
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mauricio Manfrini
Information Patent Grant
Intercalated metal/dielectric structure for nonvolatile memory devices
- Patent number 12,137,621
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mauricio Manfrini
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell with magnetic access selector apparatus
- Patent number 12,137,617
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mauricio Manfrini
Information Patent Grant
Dual-layer channel transistor and methods of forming same
- Patent number 12,125,920
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Hung Wei Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconducting metal oxide transistors having a patterned gate and...
- Patent number 12,125,921
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Yong-Jie Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric tunnel junction memory device using a magnesium oxide...
- Patent number 12,120,885
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Mauricio Manfrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor, semiconductor structure, and manufacturing method thereof
- Patent number 12,080,768
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Yen Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical metal oxide semiconductor channel selector transistor and...
- Patent number 12,075,633
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Yong-Jie Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-state memory device
- Patent number 12,075,710
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mauricio Manfrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor, semiconductor device including the same, and manufactur...
- Patent number 12,063,870
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mauricio Manfrini
Information Patent Grant
Ferroelectric tunnel junction devices with a sparse seed layer and...
- Patent number 12,057,471
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Han-Jong Chia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device including a semiconducting metal oxide fin transistor...
- Patent number 12,058,873
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Yong-Jie Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystalline semiconductor layer formed in BEOL processes
- Patent number 12,051,702
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with barrier and method for manufacturing t...
- Patent number 12,027,632
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back-end-of-line selector for memory device
- Patent number 11,997,855
- Issue date May 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-dimensional (2D) material for oxide semiconductor (OS) ferroele...
- Patent number 11,955,548
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mauricio Manfrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layered structure, semiconductor device including the same, and man...
- Patent number 11,955,549
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mauricio Manfrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor, integrated circuit, and manufacturing method
- Patent number 11,949,020
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Marcus Johannes Henricus Van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconducting metal oxide memory device using hydrogen-mediated th...
- Patent number 11,942,147
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Marcus Johannes Henricus Van Dal
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory device using back-end-of-line (BEOL) thin film...
- Patent number 11,943,933
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin transistor including a hydrogen-blocking dielectric barrier an...
- Patent number 11,929,436
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Neil Murray
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor including hydrogen diffusion barrier film and methods of...
- Patent number 11,923,459
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Hung Wei Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric tunnel junction devices with metal-FE interface layer...
- Patent number 11,917,832
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Han-Jong Chia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,916,144
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor, semiconductor device and method of fabricatin...
- Patent number 11,855,226
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Neil Quinn Murray
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned active regions and passivation layer and methods of ma...
- Patent number 11,817,485
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Hung Wei Li
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICES
- Publication number 20240389337
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240389344
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL JUNCTION SELECTOR MRAM
- Publication number 20240389356
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mauricio Manfrini
Information Patent Application
SPACER-DEFINED BACK-END TRANSISTOR AS MEMORY SELECTOR
- Publication number 20240381669
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ken-Ichi Goto
Information Patent Application
INTERCALATED METAL/DIELECTRIC STRUCTURE FOR NONVOLATILE MEMORY DEVICES
- Publication number 20240381795
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mauricio Manfrini
- G11 - INFORMATION STORAGE
Information Patent Application
DUAL-LAYER CHANNEL TRANSISTOR AND METHODS OF FORMING SAME
- Publication number 20240379873
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Hung Wei LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240379871
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Marcus Johannes Henricus VAN DAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH MAGNETIC ACCESS SELECTOR APPARATUS
- Publication number 20240373757
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mauricio Manfrini
Information Patent Application
TRANSISTOR, SEMICONDUCTOR STRUCTURE, AND MANUFACTURING METHOD THEREOF
- Publication number 20240371953
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Yen Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC TUNNEL JUNCTION MEMORY DEVICE USING A MAGNESIUM OXIDE...
- Publication number 20240365560
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Mauricio Manfrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-STATE MEMORY DEVICE
- Publication number 20240365680
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mauricio Manfrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR, SEMICONDUCTOR DEVICE INCLUDING THE SAME, AND MANUFACTUR...
- Publication number 20240365681
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mauricio MANFRINI
Information Patent Application
SEMICONDUCTING METAL OXIDE TRANSISTORS HAVING A PATTERNED GATE AND...
- Publication number 20240363762
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Yong-Jie Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric Tunnel Junction Devices with a Sparse Seed Layer and...
- Publication number 20240347581
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Han-Jong CHIA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE INCLUDING A SEMICONDUCTING METAL OXIDE FIN TRANSISTOR...
- Publication number 20240349514
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Yong-Jie WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH BARRIER AND METHOD FOR MANUFACTURING T...
- Publication number 20240313124
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gerben DOORNBOS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-END-OF-LINE SELECTOR FOR MEMORY DEVICE
- Publication number 20240276738
- Publication date Aug 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240250171
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mauricio MANFRINI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELE...
- Publication number 20240213367
- Publication date Jun 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mauricio Manfrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICE USING BACK-END-OF-LINE (BEOL) THIN FILM...
- Publication number 20240196625
- Publication date Jun 13, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Bo-Feng YOUNG
- G11 - INFORMATION STORAGE
Information Patent Application
THIN FILM TRANSISTOR INCLUDING A HYDROGEN-BLOCKING DIELECTRIC BARRI...
- Publication number 20240178322
- Publication date May 30, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Neil Quinn Murray
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC TUNNEL JUNCTION DEVICES WITH METAL-FE INTERFACE LAYER...
- Publication number 20240155846
- Publication date May 9, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Han-Jong CHIA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Including Hydrogen Diffusion Barrier Film and Methods fo...
- Publication number 20240136440
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Hung-Wei Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TRANSISTOR, SEMICONDUCTOR DEVICE AND METHOD OF FABRICATIN...
- Publication number 20240097041
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Neil Quinn Murray
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH THIN FILM TRA...
- Publication number 20240038893
- Publication date Feb 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Marcus Johannes Henricus VAN DAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC TUNNEL JUNCTION MEMORY DEVICE USING A MAGNESIUM OXIDE...
- Publication number 20240023341
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Mauricio Manfrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC DEVICE AND METHODS OF FORMING THE SAME
- Publication number 20230422513
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Wei LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20230413571
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Ling LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR INCLUDING HYDROGEN DIFFUSION BARRIER FILM AND METHODS OF...
- Publication number 20230387313
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Hung Wei LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MFM CAPACITOR ARRAY AND METHODS OF MAKING THE SAME
- Publication number 20230387186
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Chun-Chieh LU
- H01 - BASIC ELECTRIC ELEMENTS

Mauricio Manfrini

Person

Patents Grantslast 30 patents

Polarization enhancement structure for enlarging memory window

Semiconductor device and method for manufacturing the same

Ferroelectric MFM capacitor array and methods of making the same

Semiconductor device and manufacturing method thereof

Tunnel junction selector MRAM

Intercalated metal/dielectric structure for nonvolatile memory devices

Memory cell with magnetic access selector apparatus

Dual-layer channel transistor and methods of forming same

Semiconducting metal oxide transistors having a patterned gate and...

Ferroelectric tunnel junction memory device using a magnesium oxide...

Transistor, semiconductor structure, and manufacturing method thereof

Vertical metal oxide semiconductor channel selector transistor and...

Three-state memory device

Transistor, semiconductor device including the same, and manufactur...

Ferroelectric tunnel junction devices with a sparse seed layer and...

Memory device including a semiconducting metal oxide fin transistor...

Crystalline semiconductor layer formed in BEOL processes

Semiconductor structure with barrier and method for manufacturing t...

Back-end-of-line selector for memory device

Two-dimensional (2D) material for oxide semiconductor (OS) ferroele...

Layered structure, semiconductor device including the same, and man...

Transistor, integrated circuit, and manufacturing method

Semiconducting metal oxide memory device using hydrogen-mediated th...

Ferroelectric memory device using back-end-of-line (BEOL) thin film...

Thin transistor including a hydrogen-blocking dielectric barrier an...

Transistor including hydrogen diffusion barrier film and methods of...

Ferroelectric tunnel junction devices with metal-FE interface layer...

Semiconductor device and manufacturing method thereof

Thin film transistor, semiconductor device and method of fabricatin...

Self-aligned active regions and passivation layer and methods of ma...

Patents Applicationslast 30 patents

MEMORY DEVICES

MEMORY DEVICE AND METHOD OF FORMING THE SAME

TUNNEL JUNCTION SELECTOR MRAM

SPACER-DEFINED BACK-END TRANSISTOR AS MEMORY SELECTOR

INTERCALATED METAL/DIELECTRIC STRUCTURE FOR NONVOLATILE MEMORY DEVICES

DUAL-LAYER CHANNEL TRANSISTOR AND METHODS OF FORMING SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

MEMORY CELL WITH MAGNETIC ACCESS SELECTOR APPARATUS

TRANSISTOR, SEMICONDUCTOR STRUCTURE, AND MANUFACTURING METHOD THEREOF

FERROELECTRIC TUNNEL JUNCTION MEMORY DEVICE USING A MAGNESIUM OXIDE...

THREE-STATE MEMORY DEVICE

TRANSISTOR, SEMICONDUCTOR DEVICE INCLUDING THE SAME, AND MANUFACTUR...

SEMICONDUCTING METAL OXIDE TRANSISTORS HAVING A PATTERNED GATE AND...

Ferroelectric Tunnel Junction Devices with a Sparse Seed Layer and...

MEMORY DEVICE INCLUDING A SEMICONDUCTING METAL OXIDE FIN TRANSISTOR...

SEMICONDUCTOR STRUCTURE WITH BARRIER AND METHOD FOR MANUFACTURING T...

BACK-END-OF-LINE SELECTOR FOR MEMORY DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELE...

FERROELECTRIC MEMORY DEVICE USING BACK-END-OF-LINE (BEOL) THIN FILM...

THIN FILM TRANSISTOR INCLUDING A HYDROGEN-BLOCKING DIELECTRIC BARRI...

FERROELECTRIC TUNNEL JUNCTION DEVICES WITH METAL-FE INTERFACE LAYER...

Transistor Including Hydrogen Diffusion Barrier Film and Methods fo...

THIN FILM TRANSISTOR, SEMICONDUCTOR DEVICE AND METHOD OF FABRICATIN...

METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH THIN FILM TRA...

FERROELECTRIC TUNNEL JUNCTION MEMORY DEVICE USING A MAGNESIUM OXIDE...

FERROELECTRIC DEVICE AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

TRANSISTOR INCLUDING HYDROGEN DIFFUSION BARRIER FILM AND METHODS OF...

FERROELECTRIC MFM CAPACITOR ARRAY AND METHODS OF MAKING THE SAME