Max Wei

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San Jose, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
Self-aligned contact formation utilizing sacrificial polysilicon
- Patent number 7,632,736
- Issue date Dec 15, 2009
- Intel Corporation
- Max Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High concentration indium fluorine retrograde wells
- Patent number 7,129,533
- Issue date Oct 31, 2006
- Intel Corporation
- Cory E. Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High concentration indium fluorine retrograde wells
- Patent number 6,838,329
- Issue date Jan 4, 2005
- Intel Corporation
- Cory E. Weber
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Self-aligned contact formation utilizing sacrificial polysilicon
- Publication number 20090155995
- Publication date Jun 18, 2009
- Max Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with buried source rail
- Publication number 20090001440
- Publication date Jan 1, 2009
- Max Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High concentration indium fluorine retrograde wells
- Publication number 20040192055
- Publication date Sep 30, 2004
- Cory E. Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High concentration indium fluorine retrograde wells
- Publication number 20040188767
- Publication date Sep 30, 2004
- Cory E. Weber
- H01 - BASIC ELECTRIC ELEMENTS