Maxwell Walthour Lippitt, III

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Rockwall, TX, US

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Patents Grantslast 30 patents

Information Patent Grant
Methods and devices for a high-k stacked capacitor
- Patent number 7,902,033
- Issue date Mar 8, 2011
- Texas Instruments Incorporated
- Byron Lovell Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with metal silicide regions
- Patent number 7,800,226
- Issue date Sep 21, 2010
- Agere Systems Inc.
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for forming a polysilicon capacitor
- Patent number 7,670,920
- Issue date Mar 2, 2010
- Texas Instruments Incorporated
- Byron Lovell Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming metal silicide regions in an integrated circuit
- Patent number 7,250,356
- Issue date Jul 31, 2007
- Agere Systems Inc.
- Yuanning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Temperature optimization of a physical vapor deposition process to...
- Patent number 7,033,931
- Issue date Apr 25, 2006
- Agere Systems Inc.
- Maxwell W. Lippitt, III
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
MULTIPLE ELECTRODE LAYER BACKEND STACKED CAPACITOR
- Publication number 20110156209
- Publication date Jun 30, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Byron Lovell Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR CONTACT FORMED CONCURRENTLY WITH BOND PAD METALLIZATION
- Publication number 20100032803
- Publication date Feb 11, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Maxwell Walthour Lippitt, III
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND DEVICES FOR A HIGH-K STACKED CAPACITOR
- Publication number 20090200637
- Publication date Aug 13, 2009
- Byron Lovell Williams
- H01 - BASIC ELECTRIC ELEMENTS