Mayank Shrivastava

Person

Unterhaching, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Tunable FIN-SCR for robust ESD protection
- Patent number 9,608,098
- Issue date Mar 28, 2017
- INTEL DEUTSCHLAND GMBH
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and arrangements including dummy gates for el...
- Patent number 9,595,516
- Issue date Mar 14, 2017
- Intel IP Corporation
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and arrangements for electrostatic (ESD) prot...
- Patent number 9,356,013
- Issue date May 31, 2016
- Intel IP Corporation
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable fin-SCR for robust ESD protection
- Patent number 8,963,201
- Issue date Feb 24, 2015
- Intel Mobile Communications GmbH
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon controlled rectifier (SCR) device for bulk FinFET technology
- Patent number 8,785,968
- Issue date Jul 22, 2014
- Intel Mobile Communications GmbH
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective current pumping to enhance low-voltage ESD clamping using...
- Patent number 8,681,461
- Issue date Mar 25, 2014
- Intel Mobile Communications GmbH
- Mayank Shrivastava
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Low voltage ESD clamping using high voltage devices
- Patent number 8,654,491
- Issue date Feb 18, 2014
- Intel Mobile Communications GmbH
- Mayank Shrivastava
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Drain extended MOS device for bulk FinFET technology
- Patent number 8,629,420
- Issue date Jan 14, 2014
- Intel Mobile Communications GmbH
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICES AND ARRANGEMENTS FOR ELECTROSTATIC DISCHARGE...
- Publication number 20160240525
- Publication date Aug 18, 2016
- Intel IP Corporation
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tunable FIN-SCR for Robust ESD Protection
- Publication number 20150144997
- Publication date May 28, 2015
- Intel Mobile Communications GmbH
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND ARRANGEMENTS
- Publication number 20150008476
- Publication date Jan 8, 2015
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CONTROLLED RECTIFIER (SCR) DEVICE FOR BULK FINFET TECHNOLOGY
- Publication number 20140097465
- Publication date Apr 10, 2014
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAIN EXTENDED MOS DEVICE FOR BULK FINFET TECHNOLOGY
- Publication number 20140008733
- Publication date Jan 9, 2014
- Intel Mobile Communications GmbH
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW VOLTAGE ESD CLAMPING USING HIGH VOLTAGE DEVICES
- Publication number 20130258534
- Publication date Oct 3, 2013
- Intel Mobile Communications GmbH
- Mayank Shrivastava
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Selective Current Pumping to Enhance Low-Voltage ESD Clamping Using...
- Publication number 20130250461
- Publication date Sep 26, 2013
- Intel Mobile Communications GmbH
- Mayank Shrivastava
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Tunable Fin-SCR for Robust ESD Protection
- Publication number 20130229223
- Publication date Sep 5, 2013
- Intel Mobile Communications GmbH
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS

Mayank Shrivastava

Person

Patents Grantslast 30 patents

Tunable FIN-SCR for robust ESD protection

Semiconductor devices and arrangements including dummy gates for el...

Semiconductor devices and arrangements for electrostatic (ESD) prot...

Tunable fin-SCR for robust ESD protection

Silicon controlled rectifier (SCR) device for bulk FinFET technology

Selective current pumping to enhance low-voltage ESD clamping using...

Low voltage ESD clamping using high voltage devices

Drain extended MOS device for bulk FinFET technology

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICES AND ARRANGEMENTS FOR ELECTROSTATIC DISCHARGE...

Tunable FIN-SCR for Robust ESD Protection

SEMICONDUCTOR DEVICES AND ARRANGEMENTS

SILICON CONTROLLED RECTIFIER (SCR) DEVICE FOR BULK FINFET TECHNOLOGY

DRAIN EXTENDED MOS DEVICE FOR BULK FINFET TECHNOLOGY

LOW VOLTAGE ESD CLAMPING USING HIGH VOLTAGE DEVICES

Selective Current Pumping to Enhance Low-Voltage ESD Clamping Using...

Tunable Fin-SCR for Robust ESD Protection