Mayank Shrivastava

Person

Mumbai, IN

People

Patents Grantslast 30 patents

Information Patent Grant
High electron mobility transistor (HEMT) with RESURF junction
- Patent number 11,522,078
- Issue date Dec 6, 2022
- INDIAN INSTITUTE OF SCIENCE
- Rohith Soman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain extended tunnel field effect transistor
- Patent number 11,393,923
- Issue date Jul 19, 2022
- Indian Institute of Science
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping and trap profile engineering in GaN buffer to maximize AlGaN...
- Patent number 11,031,493
- Issue date Jun 8, 2021
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode high electron mobility transistor (HEMT)
- Patent number 10,840,348
- Issue date Nov 17, 2020
- Indian Institute of Science
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual fin silicon controlled rectifier (SCR) electrostatic discharge...
- Patent number 10,629,586
- Issue date Apr 21, 2020
- Indian Institute of Science
- Milova Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-electron-mobility transistor (HEMT)
- Patent number 10,553,712
- Issue date Feb 4, 2020
- INDIAN INSTITUTE OF TECHNOLOGY
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET SCR with SCR implant under anode and cathode junctions
- Patent number 10,535,762
- Issue date Jan 14, 2020
- INDIAN INSTITUTE OF SCIENCE
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods to enhance electrostatic discharg...
- Patent number 10,483,258
- Issue date Nov 19, 2019
- INDIAN INSTITUTE OF SCIENCE
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar electrostatic discharge (ESD) protection devices with na...
- Patent number 10,319,662
- Issue date Jun 11, 2019
- Indian Institute of Science
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low trigger and holding voltage silicon controlled rectifier (SCR)...
- Patent number 10,211,200
- Issue date Feb 19, 2019
- Indian Institute of Science
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for manufacturing a semiconductor device
- Patent number 9,368,573
- Issue date Jun 14, 2016
- Infineon Technologies AG
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor devices
- Patent number 8,664,720
- Issue date Mar 4, 2014
- Infineon Technologies AG
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods for manufacturing a semiconductor...
- Patent number 8,643,090
- Issue date Feb 4, 2014
- Infineon Technologies AG
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and method for coupling first and second device portions
- Patent number 8,455,947
- Issue date Jun 4, 2013
- Infineon Technologies AG
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect device and manufacturing method thereof
- Patent number 8,354,710
- Issue date Jan 15, 2013
- Infineon Technologies AG
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with trench isolations
- Patent number 8,097,930
- Issue date Jan 17, 2012
- Infineon Technologies AG
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Operational amplifier having improved slew rate
- Patent number 8,089,314
- Issue date Jan 3, 2012
- Indian Institute of Technology-Bombay
- Rajesh A. Thakker
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

Information Patent Application
DRAIN EXTENDED TUNNEL FIELD EFFECT TRANSISTOR
- Publication number 20210119044
- Publication date Apr 22, 2021
- Indian Institute of Science
- MAYANK SHRIVASTAVA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH RESURF JUNCTION
- Publication number 20200227543
- Publication date Jul 16, 2020
- Indian Institute of Science
- Rohith SOMAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPING AND TRAP PROFILE ENGINEERING IN GaN BUFFER TO MAXIMIZE AlGaN...
- Publication number 20190371930
- Publication date Dec 5, 2019
- Indian Institute of Science
- Mayank SHRIVASTAVA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A High-electron-mobility transistor (HEMT)
- Publication number 20190081164
- Publication date Mar 14, 2019
- INDIAN INSTITUTE OF SCIENCE
- MAYANK SHRIVASTAVA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT MODE HIGH ELECTRON MOBILITY TRANSISTOR (HEMT)
- Publication number 20190067440
- Publication date Feb 28, 2019
- Indian Institute of Science
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL FIN SILICON CONTROLLED RECTIFIER (SCR) ELECTROSTATIC DISCHARGE...
- Publication number 20190013310
- Publication date Jan 10, 2019
- Indian Institute of Science
- Milova PAUL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS TO ENHANCE ELECTROSTATIC DISCHARG...
- Publication number 20180247929
- Publication date Aug 30, 2018
- Indian Institute of Science
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET SCR WITH SCR IMPLANT UNDER ANODE AND CATHODE JUNCTIONS
- Publication number 20180248025
- Publication date Aug 30, 2018
- Indian Institute of Science
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR ELECTROSTATIC DISCHARGE (ESD) PROTECTION DEVICES WITH NA...
- Publication number 20180226317
- Publication date Aug 9, 2018
- Indian Institute of Science
- Mayank SHRIVASTAVA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TRIGGER AND HOLDING VOLTAGE SILICON CONTROLLED RECTIFIER (SCR)...
- Publication number 20180219007
- Publication date Aug 2, 2018
- Indian Institute of Science
- Mayank SHRIVASTAVA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20140113423
- Publication date Apr 24, 2014
- INFINEON TECHNOLOGIES AG
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Semiconductor Devices
- Publication number 20120049279
- Publication date Mar 1, 2012
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Operational Amplifier Having Improved Slew Rate
- Publication number 20110215868
- Publication date Sep 8, 2011
- Indian Institute of Technology Bombay
- Rajesh A. Thakker
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING A SEMICONDUCTOR...
- Publication number 20100237412
- Publication date Sep 23, 2010
- INFINEON TECHNOLOGIES AG
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device and Method for Coupling First and Second Device Portions
- Publication number 20100207161
- Publication date Aug 19, 2010
- INFINEON TECHNOLOGIES AG
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Device and Manufacturing Method Thereof
- Publication number 20100032749
- Publication date Feb 11, 2010
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods for Manufacturing a Semiconductor...
- Publication number 20100032773
- Publication date Feb 11, 2010
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS

Mayank Shrivastava

Person

Patents Grantslast 30 patents

High electron mobility transistor (HEMT) with RESURF junction

Drain extended tunnel field effect transistor

Doping and trap profile engineering in GaN buffer to maximize AlGaN...

Enhancement mode high electron mobility transistor (HEMT)

Dual fin silicon controlled rectifier (SCR) electrostatic discharge...

High-electron-mobility transistor (HEMT)

FinFET SCR with SCR implant under anode and cathode junctions

Semiconductor devices and methods to enhance electrostatic discharg...

Non-planar electrostatic discharge (ESD) protection devices with na...

Low trigger and holding voltage silicon controlled rectifier (SCR)...

Methods for manufacturing a semiconductor device

High voltage semiconductor devices

Semiconductor devices and methods for manufacturing a semiconductor...

Device and method for coupling first and second device portions

Field-effect device and manufacturing method thereof

Semiconductor devices with trench isolations

Operational amplifier having improved slew rate

Patents Applicationslast 30 patents

DRAIN EXTENDED TUNNEL FIELD EFFECT TRANSISTOR

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH RESURF JUNCTION

DOPING AND TRAP PROFILE ENGINEERING IN GaN BUFFER TO MAXIMIZE AlGaN...

A High-electron-mobility transistor (HEMT)

ENHANCEMENT MODE HIGH ELECTRON MOBILITY TRANSISTOR (HEMT)

DUAL FIN SILICON CONTROLLED RECTIFIER (SCR) ELECTROSTATIC DISCHARGE...

SEMICONDUCTOR DEVICES AND METHODS TO ENHANCE ELECTROSTATIC DISCHARG...

FINFET SCR WITH SCR IMPLANT UNDER ANODE AND CATHODE JUNCTIONS

NON-PLANAR ELECTROSTATIC DISCHARGE (ESD) PROTECTION DEVICES WITH NA...

LOW TRIGGER AND HOLDING VOLTAGE SILICON CONTROLLED RECTIFIER (SCR)...

METHODS FOR MANUFACTURING A SEMICONDUCTOR DEVICE

High Voltage Semiconductor Devices

Operational Amplifier Having Improved Slew Rate

SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING A SEMICONDUCTOR...

Device and Method for Coupling First and Second Device Portions

Field-Effect Device and Manufacturing Method Thereof

Semiconductor Devices and Methods for Manufacturing a Semiconductor...