Mei-Hsuan LIN

Person

Tainan City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Salicide formation using a cap layer
- Patent number 9,978,604
- Issue date May 22, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mei-Hsuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Salicide formation using a cap layer
- Patent number 9,343,318
- Issue date May 17, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS devices having non-uniform stressor doping
- Patent number 9,209,270
- Issue date Dec 8, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having stressor
- Patent number 9,024,391
- Issue date May 5, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS devices having non-uniform stressor doping
- Patent number 8,994,097
- Issue date Mar 31, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having a stressor and method of forming the same
- Patent number 8,846,492
- Issue date Sep 30, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having etch stop layer
- Patent number 8,836,088
- Issue date Sep 16, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical proximity correction for active region design layout
- Patent number 8,775,982
- Issue date Jul 8, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan Lin
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 8,765,545
- Issue date Jul 1, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical proximity correction for active region design layout
- Patent number 8,533,639
- Issue date Sep 10, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan Lin
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method and system for modifying doped region design layout during m...
- Patent number 8,527,915
- Issue date Sep 3, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan Lin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor structure and method of manufacturing
- Patent number 8,513,143
- Issue date Aug 20, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 8,470,660
- Issue date Jun 25, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SALICIDE FORMATION USING A CAP LAYER
- Publication number 20180261461
- Publication date Sep 13, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SALICIDE FORMATION USING A CAP LAYER
- Publication number 20160093497
- Publication date Mar 31, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS Devices Having Non-Uniform Stressor Doping
- Publication number 20150171189
- Publication date Jun 18, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING STRESSOR
- Publication number 20150041857
- Publication date Feb 12, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING ETCH STOP LAYER
- Publication number 20130299987
- Publication date Nov 14, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTICAL PROXIMITY CORRECTION FOR ACTIVE REGION DESIGN LAYOUT
- Publication number 20130285194
- Publication date Oct 31, 2013
- Mei-Hsuan Lin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20130267069
- Publication date Oct 10, 2013
- Mei-Hsuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS Devices Having Non-Uniform Stressor Doping
- Publication number 20130234217
- Publication date Sep 12, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SALICIDE FORMATION USING A CAP LAYER
- Publication number 20130200442
- Publication date Aug 8, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR MODIFYING DOPED REGION DESIGN LAYOUT DURING M...
- Publication number 20130111419
- Publication date May 2, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan Lin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
OPTICAL PROXIMITY CORRECTION FOR ACTIVE REGION DESIGN LAYOUT
- Publication number 20130069162
- Publication date Mar 21, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan Lin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Method of Manufacturing a Semiconductor Device
- Publication number 20130071995
- Publication date Mar 21, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING
- Publication number 20130043590
- Publication date Feb 21, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HAVING A STRESSOR AND METHOD OF FORMING THE SAME
- Publication number 20130020717
- Publication date Jan 24, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mei-Hsuan LIN
- H01 - BASIC ELECTRIC ELEMENTS

Mei-Hsuan LIN

Person

Patents Grantslast 30 patents

Salicide formation using a cap layer

Salicide formation using a cap layer

MOS devices having non-uniform stressor doping

Semiconductor structure having stressor

MOS devices having non-uniform stressor doping

Integrated circuit having a stressor and method of forming the same

Semiconductor structure having etch stop layer

Optical proximity correction for active region design layout

Method of manufacturing a semiconductor device

Optical proximity correction for active region design layout

Method and system for modifying doped region design layout during m...

Semiconductor structure and method of manufacturing

Method of manufacturing a semiconductor device

Patents Applicationslast 30 patents

SALICIDE FORMATION USING A CAP LAYER

SALICIDE FORMATION USING A CAP LAYER

MOS Devices Having Non-Uniform Stressor Doping

SEMICONDUCTOR STRUCTURE HAVING STRESSOR

SEMICONDUCTOR STRUCTURE HAVING ETCH STOP LAYER

OPTICAL PROXIMITY CORRECTION FOR ACTIVE REGION DESIGN LAYOUT

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

MOS Devices Having Non-Uniform Stressor Doping

SALICIDE FORMATION USING A CAP LAYER

METHOD AND SYSTEM FOR MODIFYING DOPED REGION DESIGN LAYOUT DURING M...

OPTICAL PROXIMITY CORRECTION FOR ACTIVE REGION DESIGN LAYOUT

Method of Manufacturing a Semiconductor Device

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING

INTEGRATED CIRCUIT HAVING A STRESSOR AND METHOD OF FORMING THE SAME