MeiKei Leong

Person

Wappingers Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of reducing detrimental STI-induced stress in MOSFET channels
- Patent number 7,618,857
- Issue date Nov 17, 2009
- International Business Machines Corporation
- Meikei Leong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an integrated circuit structure on a hybrid cryst...
- Patent number 7,439,109
- Issue date Oct 21, 2008
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid planar and FinFET CMOS devices
- Patent number 7,250,658
- Issue date Jul 31, 2007
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement of electron and hole mobilities in <110> Si under biaxi...
- Patent number 7,161,169
- Issue date Jan 9, 2007
- International Business Machines Corporation
- Victor Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate engineering for optimum CMOS device performance
- Patent number 7,148,559
- Issue date Dec 12, 2006
- International Business Machines Corporation
- Victor W. C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High mobility plane CMOS SOI
- Patent number 6,998,684
- Issue date Feb 14, 2006
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and process to make multiple-threshold metal gates CMOS tech...
- Patent number 6,846,734
- Issue date Jan 25, 2005
- International Business Machines Corporation
- Ricky Amos
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of Reducing Detrimental STI-Induced Stress in MOSFET Channels
- Publication number 20080171413
- Publication date Jul 17, 2008
- International Business Machines Corporation
- Meikei Leong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration of strained Ge into advanced CMOS technology
- Publication number 20070218621
- Publication date Sep 20, 2007
- International Business Machines Corporation
- Huiling Shang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultrathin-body schottky contact MOSFET
- Publication number 20070001223
- Publication date Jan 4, 2007
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High mobility plane CMOS SOI
- Publication number 20060076623
- Publication date Apr 13, 2006
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH MOBILITY PLANE CMOS SOI
- Publication number 20050224875
- Publication date Oct 13, 2005
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and process to make multiple-threshold metal gates CMOS tech...
- Publication number 20050106788
- Publication date May 19, 2005
- International Business Machines Corporation
- Ricky Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE ENGINEERING FOR OPTIMUM CMOS DEVICE PERFORMANCE
- Publication number 20050001290
- Publication date Jan 6, 2005
- International Business Machines Corporation
- Victor W.C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and process to make multiple-threshold metal gates CMOS tech...
- Publication number 20040094804
- Publication date May 20, 2004
- International Business Machines Corporation
- Ricky Amos
- H01 - BASIC ELECTRIC ELEMENTS

MeiKei Leong

Person

Patents Grantslast 30 patents

Method of reducing detrimental STI-induced stress in MOSFET channels

Method of forming an integrated circuit structure on a hybrid cryst...

Hybrid planar and FinFET CMOS devices

Enhancement of electron and hole mobilities in <110> Si under biaxi...

Substrate engineering for optimum CMOS device performance

High mobility plane CMOS SOI

Method and process to make multiple-threshold metal gates CMOS tech...

Patents Applicationslast 30 patents

Method of Reducing Detrimental STI-Induced Stress in MOSFET Channels

Integration of strained Ge into advanced CMOS technology

Ultrathin-body schottky contact MOSFET

High mobility plane CMOS SOI

HIGH MOBILITY PLANE CMOS SOI

Method and process to make multiple-threshold metal gates CMOS tech...

SUBSTRATE ENGINEERING FOR OPTIMUM CMOS DEVICE PERFORMANCE

Method and process to make multiple-threshold metal gates CMOS tech...