Meiyin YANG

Person

Beijing, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Voltage control of SOT-MRAM for deterministic writing
- Patent number 11,930,720
- Issue date Mar 12, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Meiyin Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-state memory and method for manufacturing the same
- Patent number 10,991,877
- Issue date Apr 27, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Meiyin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage control magnetic random storage unit, memory and logic devi...
- Patent number 10,978,121
- Issue date Apr 13, 2021
- Institute of Semiconductors, Chinese Academy of Sciences
- Kaiyou Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory and method for manufacturing...
- Patent number 10,756,256
- Issue date Aug 25, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Meiyin Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbit torque magnetoresistive random access memory and method...
- Patent number 10,700,124
- Issue date Jun 30, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Meiyin Yang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
IN-MEMORY COMPUTING UNIT AND IN-MEMORY COMPUTING CIRCUIT HAVING REC...
- Publication number 20230178133
- Publication date Jun 8, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Yan CUI
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN HALL DEVICE, METHOD FOR OBTAINING HALL VOLTAGE, AND MAX POOLIN...
- Publication number 20230125211
- Publication date Apr 27, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Yan CUI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STORAGE UNIT AND DATA WRITING AND READING METHODS THEREOF, MEMORY A...
- Publication number 20220352460
- Publication date Nov 3, 2022
- Institute of Microelectronics, Chinese Academy of Sciences
- Meiyin YANG
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-STATE MEMORY AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20200303635
- Publication date Sep 24, 2020
- INSTITUTE OF MICROELECTRONICS, CHINESES ACADEMY OF SCIENCES
- Meiyin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VOLTAGE CONTROL MAGNETIC RANDOM STORAGE UNIT, MEMORY AND LOGIC DEVI...
- Publication number 20200211609
- Publication date Jul 2, 2020
- Institute of Semiconductors, Chinese Academy of Sciences
- Kaiyou WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR MANUFACTURING...
- Publication number 20200212293
- Publication date Jul 2, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Meiyin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-ORBIT TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD...
- Publication number 20200212103
- Publication date Jul 2, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Meiyin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-ORBIT TORQUE MAGNETORESISTIVE RANDON ACCESS MEMORY AND METHOD...
- Publication number 20200152252
- Publication date May 14, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Meiyin YANG
- G11 - INFORMATION STORAGE

Meiyin YANG

Person

Patents Grantslast 30 patents

Voltage control of SOT-MRAM for deterministic writing

Multi-state memory and method for manufacturing the same

Voltage control magnetic random storage unit, memory and logic devi...

Magnetoresistive random access memory and method for manufacturing...

Spin-orbit torque magnetoresistive random access memory and method...

Patents Applicationslast 30 patents

IN-MEMORY COMPUTING UNIT AND IN-MEMORY COMPUTING CIRCUIT HAVING REC...

SPIN HALL DEVICE, METHOD FOR OBTAINING HALL VOLTAGE, AND MAX POOLIN...

STORAGE UNIT AND DATA WRITING AND READING METHODS THEREOF, MEMORY A...

MULTI-STATE MEMORY AND METHOD FOR MANUFACTURING THE SAME

VOLTAGE CONTROL MAGNETIC RANDOM STORAGE UNIT, MEMORY AND LOGIC DEVI...

MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR MANUFACTURING...

SPIN-ORBIT TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD...

SPIN-ORBIT TORQUE MAGNETORESISTIVE RANDON ACCESS MEMORY AND METHOD...