Mel Hymas

Person

Camas, WA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Non-volatile flash memory cell
- Patent number 10,700,171
- Issue date Jun 30, 2020
- Microchip Technology Incorporated
- Sonu Daryanani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with a flat-topped floating gate structure
- Patent number 10,700,077
- Issue date Jun 30, 2020
- Microchip Technology Incorporated
- Mel Hymas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with oxide cap and spacer layer for protecting a floati...
- Patent number 10,546,947
- Issue date Jan 28, 2020
- Microchip Technology Incorporated
- Mel Hymas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating gate spacer for controlling a source region formation in a...
- Patent number 10,424,589
- Issue date Sep 24, 2019
- Microchip Technology Incorporated
- James Walls
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with asymmetric word line and erase gate for decoupled...
- Patent number 10,347,728
- Issue date Jul 9, 2019
- Microchip Technology Incorporated
- Mel Hymas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a polysilicon sidewall oxide region in a memory cell
- Patent number 10,050,131
- Issue date Aug 14, 2018
- Microchip Technology Incorporated
- Jack Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
EEPROM memory cell with low voltage read path and high voltage eras...
- Patent number 9,455,037
- Issue date Sep 27, 2016
- Microchip Technology Incorporated
- Kent Hewitt
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Floating Gate Spacer For Controlling A Source Region Formation In A...
- Publication number 20190252395
- Publication date Aug 15, 2019
- MICROCHIP TECHNOLOGY INCORPORATED
- James Walls
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cell With Asymmetric Word Line And Erase Gate For Decoupled...
- Publication number 20190207006
- Publication date Jul 4, 2019
- MICROCHIP TECHNOLOGY INCORPORATED
- Mel Hymas
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cell With A Flat-Topped Floating Gate Structure
- Publication number 20190206881
- Publication date Jul 4, 2019
- MICROCHIP TECHNOLOGY INCORPORATED
- Mel Hymas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cell With Oxide Cap And Spacer Layer For Protecting A Floati...
- Publication number 20190097027
- Publication date Mar 28, 2019
- MICROCHIP TECHNOLOGY INCORPORATED
- Mel Hymas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-Volatile Flash Memory Cell
- Publication number 20180233371
- Publication date Aug 16, 2018
- MICROCHIP TECHNOLOGY INCORPORATED
- Sonu Daryanani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Of Forming A Polysilicon Sidewall Oxide Region In A Memory Cell
- Publication number 20170170303
- Publication date Jun 15, 2017
- MICROCHIP TECHNOLOGY INCORPORATED
- Jack Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EEPROM MEMORY CELL WITH LOW VOLTAGE READ PATH AND HIGH VOLTAGE ERAS...
- Publication number 20140269102
- Publication date Sep 18, 2014
- MICROCHIP TECHNOLOGY INCORPORATED
- Kent Hewitt
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Non-volatile flash memory cell

Memory cell with a flat-topped floating gate structure

Memory cell with oxide cap and spacer layer for protecting a floati...

Floating gate spacer for controlling a source region formation in a...

Memory cell with asymmetric word line and erase gate for decoupled...

Method of forming a polysilicon sidewall oxide region in a memory cell

EEPROM memory cell with low voltage read path and high voltage eras...

Patents Applicationslast 30 patents

Floating Gate Spacer For Controlling A Source Region Formation In A...

Memory Cell With Asymmetric Word Line And Erase Gate For Decoupled...

Memory Cell With A Flat-Topped Floating Gate Structure

Memory Cell With Oxide Cap And Spacer Layer For Protecting A Floati...

Non-Volatile Flash Memory Cell

Method Of Forming A Polysilicon Sidewall Oxide Region In A Memory Cell

EEPROM MEMORY CELL WITH LOW VOLTAGE READ PATH AND HIGH VOLTAGE ERAS...