MENG-HSIN YEH

Person

Xiamen, CN

People

Patents Grantslast 30 patents

Information Patent Grant
LED with current spreading layer and fabrication method
- Patent number 9,705,033
- Issue date Jul 11, 2017
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Meng-Hsin Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride light emitting diode and fabrication method thereof
- Patent number 9,570,654
- Issue date Feb 14, 2017
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Wen-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diode and manufacturing method therefor
- Patent number 9,397,253
- Issue date Jul 19, 2016
- Meng-Hsin Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium-nitride-based light emitting diodes with multiple potential...
- Patent number 9,324,907
- Issue date Apr 26, 2016
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Meng-Hsin Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride light emitting diode and fabrication method thereof
- Patent number 9,312,438
- Issue date Apr 12, 2016
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Wen-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride light-emitting diode with a current spreading layer
- Patent number 8,860,044
- Issue date Oct 14, 2014
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Meng-hsin Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing GaN-based film LED
- Patent number 7,955,959
- Issue date Jun 7, 2011
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Jyh Chiarng Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
EPITAXIAL LIGHT EMITTING STRUCTURE AND LIGHT EMITTING DIODE
- Publication number 20210066542
- Publication date Mar 4, 2021
- XIAMEN SA'NAN OPTOELECTRONICS CO., LTD.
- WEN-YU LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Structure and Growth Method of Group-III Nitrides
- Publication number 20160153119
- Publication date Jun 2, 2016
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD
- YANHAO DU
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitride Light Emitting Diode and Fabrication Method Thereof
- Publication number 20150311389
- Publication date Oct 29, 2015
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD
- WEN-YU LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride Light Emitting Diode and Fabrication Method Thereof
- Publication number 20150270439
- Publication date Sep 24, 2015
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD
- WEN-YU LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LED with Current Spreading Layer and Fabrication Method
- Publication number 20150053920
- Publication date Feb 26, 2015
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD
- MENG-HSIN YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light Emitting Diode and Manufacturing Method Therefor
- Publication number 20150048379
- Publication date Feb 19, 2015
- Xiamen Sanan Optoelectronics Technology Co., Ltd.
- Meng-Hsin Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM-NITRIDE-BASED LIGHT EMITTING DIODES WITH MULTIPLE POTENTIAL...
- Publication number 20130187125
- Publication date Jul 25, 2013
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD
- MENG-HSIN YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride Light-Emitting Diode with a Current Spreading Layer
- Publication number 20120280258
- Publication date Nov 8, 2012
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD
- Meng-hsin YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING GaN-BASED FILM LED
- Publication number 20110076791
- Publication date Mar 31, 2011
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Jyh Chiarng WU
- H01 - BASIC ELECTRIC ELEMENTS

MENG-HSIN YEH

Person

Patents Grantslast 30 patents

LED with current spreading layer and fabrication method

Nitride light emitting diode and fabrication method thereof

Light emitting diode and manufacturing method therefor

Gallium-nitride-based light emitting diodes with multiple potential...

Nitride light emitting diode and fabrication method thereof

Nitride light-emitting diode with a current spreading layer

Method for manufacturing GaN-based film LED

Patents Applicationslast 30 patents

EPITAXIAL LIGHT EMITTING STRUCTURE AND LIGHT EMITTING DIODE

Epitaxial Structure and Growth Method of Group-III Nitrides

Nitride Light Emitting Diode and Fabrication Method Thereof

Nitride Light Emitting Diode and Fabrication Method Thereof

LED with Current Spreading Layer and Fabrication Method

Light Emitting Diode and Manufacturing Method Therefor

GALLIUM-NITRIDE-BASED LIGHT EMITTING DIODES WITH MULTIPLE POTENTIAL...

Nitride Light-Emitting Diode with a Current Spreading Layer

METHOD FOR MANUFACTURING GaN-BASED FILM LED