Mengyu PAN

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
SGT MOSFET with adjustable CRSS and CISS
- Patent number 10,923,588
- Issue date Feb 16, 2021
- HUNTECK SEMICONDUCTOR (SHANGHAI) CO. Ltd.
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SGT MOSFET with adjustable CRSS and CISS
- Patent number 10,038,089
- Issue date Jul 31, 2018
- HUNTECK SEMICONDUCTOR (SHANGHAI) CO., Ltd
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preventing gate oxide damage of a trench MOSFET during w...
- Patent number 8,084,304
- Issue date Dec 27, 2011
- Alpha & Omega Semiconductor, Inc.
- Mengyu Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to manufacture split gate with high density plasma oxide lay...
- Patent number 8,053,315
- Issue date Nov 8, 2011
- Alpha & Omega Semiconductor, Ltd.
- Sung-Shan Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET with an ONO insulating layer sandwiched between an ES...
- Patent number 7,728,385
- Issue date Jun 1, 2010
- Alpha and Omega Semiconductor, Ltd.
- Mengyu Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preventing gate oxide damage of a trench MOSFET during w...
- Patent number 7,585,705
- Issue date Sep 8, 2009
- Alpha & Omega Semiconductor, Inc.
- Mengyu Pan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SGT MOSFET WITH ADJUSTABLE CRSS AND CISS
- Publication number 20190027596
- Publication date Jan 24, 2019
- Hunteck Semiconductor (Shanghai) Co.,Ltd.
- Jun HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SGT MOSFET WITH ADJUSTABLE CRSS AND CISS
- Publication number 20170162689
- Publication date Jun 8, 2017
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Preventing Gate Oxide Damage of a Trench MOSFET during W...
- Publication number 20110018054
- Publication date Jan 27, 2011
- Mengyu Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to manufacture split gate with high density plasma oxide lay...
- Publication number 20100099230
- Publication date Apr 22, 2010
- Alpha & Omega Semiconductor, LTD.
- Sung-Shan Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Preventing Gate Oxide Damage of a Trench MOSFET during W...
- Publication number 20090278199
- Publication date Nov 12, 2009
- Mengyu Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for preventing gate oxide damage of a trench MOSFET during w...
- Publication number 20090140333
- Publication date Jun 4, 2009
- Mengyu Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split gate formation with high density plasma (HDP) oxide layer as...
- Publication number 20080150013
- Publication date Jun 26, 2008
- Alpha & Omega Semiconductor, LTD.
- Sung-Shan Tai
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

SGT MOSFET with adjustable CRSS and CISS

SGT MOSFET with adjustable CRSS and CISS

Method for preventing gate oxide damage of a trench MOSFET during w...

Method to manufacture split gate with high density plasma oxide lay...

Trench MOSFET with an ONO insulating layer sandwiched between an ES...

Method for preventing gate oxide damage of a trench MOSFET during w...

Patents Applicationslast 30 patents

SGT MOSFET WITH ADJUSTABLE CRSS AND CISS

SGT MOSFET WITH ADJUSTABLE CRSS AND CISS

Method for Preventing Gate Oxide Damage of a Trench MOSFET during W...

Method to manufacture split gate with high density plasma oxide lay...

Method for Preventing Gate Oxide Damage of a Trench MOSFET during W...

Method for preventing gate oxide damage of a trench MOSFET during w...

Split gate formation with high density plasma (HDP) oxide layer as...