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Michael A. Derenge
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Columbia, MD, US
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Patents Grants
last 30 patents
Information
Patent Grant
Methodology for annealing group III-nitride semiconductor device st...
Patent number
10,460,955
Issue date
Oct 29, 2019
The United States of America as represented by the Secretary of the Army
Michael A. Derenge
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Low-defect density gallium nitride semiconductor structures and dev...
Patent number
8,637,901
Issue date
Jan 28, 2014
The United States of America as represented by the Secretary of the Army
Tsvetanka Zheleva
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Low-defect density gallium nitride semiconductor structures and fab...
Patent number
8,314,016
Issue date
Nov 20, 2012
The United States of America as represented by the Secretary of the Army
Tsvetanka S. Zheleva
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method using multiple layer annealing cap for fabricating group III...
Patent number
7,977,224
Issue date
Jul 12, 2011
The United States of America as represented by the Secretary of the Army
Carl Emmett Hager, IV
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Patents Applications
last 30 patents
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Patent Application
METHODOLOGY FOR ANNEALING GROUP III-NITRIDE SEMICONDUCTOR DEVICE ST...
Publication number
20160061528
Publication date
Mar 3, 2016
U.S. ARMY RESEARCH LABORATORY ATTN: RDRL-LOC-I
Michael A. Derenge
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
LOW-DEFECT DENSITY GALLIUM NITRIDE SEMICONDUCTOR STRUCTURES AND FAB...
Publication number
20130207119
Publication date
Aug 15, 2013
The Government of the United States as Represented by the Secretary of the Army
Tsvetanka S. Zheleva
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Low-defect density gallium nitride semiconductor structures and fab...
Publication number
20100171124
Publication date
Jul 8, 2010
The United States of America as represented by the Secretary of the Army
Tsvetanka S. Zheleva
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method Using Multiple Layer Annealing Cap for Fabricating Group III...
Publication number
20100133656
Publication date
Jun 3, 2010
United States Government as represented by the Secretary of the Army
CARL EMMETT HAGER, IV
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method for fabricating group III-nitride high electron mobility tra...
Publication number
20090233414
Publication date
Sep 17, 2009
Pankaj B. Shah
H01 - BASIC ELECTRIC ELEMENTS