Michael A. Gribelyuk

Person

Stamford, CT, US

People

Patents Grantslast 30 patents

Information Patent Grant
High performance CMOS circuits, and methods for fabricating same
- Patent number 8,383,483
- Issue date Feb 26, 2013
- International Business Machines Corporation
- John C. Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks
- Patent number 8,288,237
- Issue date Oct 16, 2012
- International Business Machines Corporation
- Alessandro C. Callegari
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming metal/high-κ gate stacks with high mobility
- Patent number 8,153,514
- Issue date Apr 10, 2012
- International Business Machines Corporation
- Wanda Andreoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxynitride as a pFET material
- Patent number 7,776,701
- Issue date Aug 17, 2010
- International Business Machines Corporation
- Alessandro C. Callegari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for tuning the threshold voltage of a metal gate and high-k...
- Patent number 7,754,594
- Issue date Jul 13, 2010
- International Business Machines Corporation
- Michael P Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-temperature stable gate structure with metallic electrode
- Patent number 7,683,418
- Issue date Mar 23, 2010
- International Business Machines Corporation
- Dae-Gyu Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks
- Patent number 7,667,277
- Issue date Feb 23, 2010
- International Business Machines Corporation
- Alessandro C. Callegari
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Deposition of hafnium oxide and/or zirconium oxide and fabrication...
- Patent number 7,566,938
- Issue date Jul 28, 2009
- International Business Machines Corporation
- Cyril Cabral, Jr.
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
High-temperature stable gate structure with metallic electrode
- Patent number 7,521,345
- Issue date Apr 21, 2009
- International Business Machines Corporation
- Dae-Gyu Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxynitride as a pFET material
- Patent number 7,436,034
- Issue date Oct 14, 2008
- International Business Machines Corporation
- Alessandro C. Callegari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-temperature stable gate structure with metallic electrode
- Patent number 7,279,413
- Issue date Oct 9, 2007
- International Business Machines Corporation
- Dae-Gyu Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polycrystalline silicon layer with nano-grain structure and method...
- Patent number 7,232,774
- Issue date Jun 19, 2007
- International Business Machines Corporation
- Ashima B. Chakravarti
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming metal/high-k gate stacks with high mobility
- Patent number 7,115,959
- Issue date Oct 3, 2006
- International Business Machines Corporation
- Wanda Andreoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for avoiding oxide undercut during pre-silicide clean for th...
- Patent number 7,091,128
- Issue date Aug 15, 2006
- International Business Machines Corporation
- Atul C. Ajmera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemical treatment to retard diffusion in a semiconductor overlayer
- Patent number 7,071,103
- Issue date Jul 4, 2006
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron holography method
- Patent number 7,015,469
- Issue date Mar 21, 2006
- Jeol USA, Inc.
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for avoiding oxide undercut during pre-silicide clean for th...
- Patent number 6,991,979
- Issue date Jan 31, 2006
- International Business Machines Corporation
- Atul C. Ajmera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposition of hafnium oxide and/or zirconium oxide and fabrication...
- Patent number 6,982,230
- Issue date Jan 3, 2006
- International Business Machines Corporation
- Cyril Cabral, Jr.
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Thermally stable poly-Si/high dielectric constant material interfaces
- Patent number 6,573,197
- Issue date Jun 3, 2003
- International Business Machines Corporation
- Alessandro C. Callegari
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
High mobility FETS using A1203 as a gate oxide
- Patent number 6,511,876
- Issue date Jan 28, 2003
- International Business Machines Corporation
- Douglas A. Buchanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reactive sputtering method for forming metal-silicon layer
- Patent number 6,413,386
- Issue date Jul 2, 2002
- International Business Machines Corporation
- Alessandro Cesare Callegari
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
NiPt AND Ti INTERSECTING SILICIDE PROCESS AND STRUCTURE
- Publication number 20170271471
- Publication date Sep 21, 2017
- International Business Machines Corporation
- Nicolas L. Breil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NiPt AND Ti INTERSECTING SILICIDE PROCESS AND STRUCTURE
- Publication number 20170194454
- Publication date Jul 6, 2017
- International Business Machines Corporation
- Nicolas L. Breil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR TUNING THE THRESHOLD VOLTAGE OF A METAL GATE AND HIGH-K...
- Publication number 20100187643
- Publication date Jul 29, 2010
- International Business Machines Corporation
- MICHAEL P. CHUDZIK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE CMOS CIRCUITS, AND METHODS FOR FABRICATING SAME
- Publication number 20100041221
- Publication date Feb 18, 2010
- International Business Machines Coporation
- John C. Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TiC AS A THERMALLY STABLE p-METAL CARBIDE ON HIGH k SiO2 GATE STACKS
- Publication number 20100015790
- Publication date Jan 21, 2010
- International Business Machines Corporation
- Alessandro C. Callegari
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FIELD EFFECT TRANSISTOR WITH REDUCED OVERLAP CAPACITANCE
- Publication number 20090212332
- Publication date Aug 27, 2009
- International Business Machines Corporation
- Xinlin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK STRUCTURE WITH OXYGEN GETTERING LAYER
- Publication number 20090152651
- Publication date Jun 18, 2009
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-TEMPERATURE STABLE GATE STRUCTURE WITH METALLIC ELECTRODE
- Publication number 20090101993
- Publication date Apr 23, 2009
- International Business Machines Corporation
- Dae-Gyu Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXYNITRIDE AS A pFET MATERIAL
- Publication number 20080299730
- Publication date Dec 4, 2008
- International Business Machines Corporation
- Alessandro C. Callegari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING METAL/HIGH-k GATE STACKS WITH HIGH MOBILITY
- Publication number 20080293259
- Publication date Nov 27, 2008
- International Business Machines Corporation
- Wanda Andreoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-TEMPERATURE STABLE GATE STRUCTURE WITH METALLIC ELECTRODE
- Publication number 20070262348
- Publication date Nov 15, 2007
- International Business Machines Corporation
- Dae-Gyu Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High performance CMOS circuits, and methods for fabricating the same
- Publication number 20070152276
- Publication date Jul 5, 2007
- International Business Machines Corporation
- John C. Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal oxynitride as a pFET material
- Publication number 20070138578
- Publication date Jun 21, 2007
- International Business Machines Corporation
- Alessandro C. Callegari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming metal/high-k gate stacks with high mobility
- Publication number 20060289903
- Publication date Dec 28, 2006
- Wanda Andreoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks
- Publication number 20060163630
- Publication date Jul 27, 2006
- International Business Machines Corporation
- Alessandro C. Callegari
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Deposition of hafnium oxide and/or zirconium oxide and fabrication...
- Publication number 20060138603
- Publication date Jun 29, 2006
- International Business Machines Corporation
- Cyril Cabral
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for avoiding oxide undercut during pre-silicide clean for th...
- Publication number 20060057797
- Publication date Mar 16, 2006
- International Business Machines Corporation
- Atul C. Ajmera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHEMICAL TREATMENT TO RETARD DIFFUSION IN A SEMICONDUCTOR OVERLAYER
- Publication number 20060024934
- Publication date Feb 2, 2006
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming metal/high-k gate stacks with high mobility
- Publication number 20050280105
- Publication date Dec 22, 2005
- International Business Machines Corporation
- Wanda Andreoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-temperature stable gate structure with metallic electrode
- Publication number 20050282341
- Publication date Dec 22, 2005
- International Business Machines Corporation
- Dae-Gyu Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Polycrystalline Silicon Layer With Nano-grain Structure and Method...
- Publication number 20050158924
- Publication date Jul 21, 2005
- International Business Machines Corporation
- Ashima B. Chakravarti
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR AVOIDING OXIDE UNDERCUT DURING PRE-SILICIDE CLEAN FOR TH...
- Publication number 20050064635
- Publication date Mar 24, 2005
- International Business Machines Corporation
- Atul C. Ajmera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electron holography method
- Publication number 20040195506
- Publication date Oct 7, 2004
- IBM Corporation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deposition of hafnium oxide and/or zirconium oxide and fabrication...
- Publication number 20040092073
- Publication date May 13, 2004
- Cyril Cabral
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HIGH MOBILITY FETS USING AL2O3 AS A GATE OXIDE
- Publication number 20020197789
- Publication date Dec 26, 2002
- International Business Machines Corporation
- Douglas A. Buchanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thermally stable poly-Si/high dielectric constant material interfaces
- Publication number 20020151142
- Publication date Oct 17, 2002
- Alessandro C. Callegari
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Michael A. Gribelyuk

Person

Patents Grantslast 30 patents

High performance CMOS circuits, and methods for fabricating same

TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks

Method of forming metal/high-κ gate stacks with high mobility

Metal oxynitride as a pFET material

Method for tuning the threshold voltage of a metal gate and high-k...

High-temperature stable gate structure with metallic electrode

TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks

Deposition of hafnium oxide and/or zirconium oxide and fabrication...

High-temperature stable gate structure with metallic electrode

Metal oxynitride as a pFET material

High-temperature stable gate structure with metallic electrode

Polycrystalline silicon layer with nano-grain structure and method...

Method of forming metal/high-k gate stacks with high mobility

Method for avoiding oxide undercut during pre-silicide clean for th...

Chemical treatment to retard diffusion in a semiconductor overlayer

Electron holography method

Method for avoiding oxide undercut during pre-silicide clean for th...

Deposition of hafnium oxide and/or zirconium oxide and fabrication...

Thermally stable poly-Si/high dielectric constant material interfaces

High mobility FETS using A1203 as a gate oxide

Reactive sputtering method for forming metal-silicon layer

Patents Applicationslast 30 patents

NiPt AND Ti INTERSECTING SILICIDE PROCESS AND STRUCTURE

NiPt AND Ti INTERSECTING SILICIDE PROCESS AND STRUCTURE

METHOD FOR TUNING THE THRESHOLD VOLTAGE OF A METAL GATE AND HIGH-K...

HIGH PERFORMANCE CMOS CIRCUITS, AND METHODS FOR FABRICATING SAME

TiC AS A THERMALLY STABLE p-METAL CARBIDE ON HIGH k SiO2 GATE STACKS

FIELD EFFECT TRANSISTOR WITH REDUCED OVERLAP CAPACITANCE

GATE STACK STRUCTURE WITH OXYGEN GETTERING LAYER

HIGH-TEMPERATURE STABLE GATE STRUCTURE WITH METALLIC ELECTRODE

METAL OXYNITRIDE AS A pFET MATERIAL

METHOD OF FORMING METAL/HIGH-k GATE STACKS WITH HIGH MOBILITY

HIGH-TEMPERATURE STABLE GATE STRUCTURE WITH METALLIC ELECTRODE

High performance CMOS circuits, and methods for fabricating the same

Metal oxynitride as a pFET material

Method of forming metal/high-k gate stacks with high mobility

TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks

Deposition of hafnium oxide and/or zirconium oxide and fabrication...

Method for avoiding oxide undercut during pre-silicide clean for th...

CHEMICAL TREATMENT TO RETARD DIFFUSION IN A SEMICONDUCTOR OVERLAYER

Method of forming metal/high-k gate stacks with high mobility

High-temperature stable gate structure with metallic electrode

Polycrystalline Silicon Layer With Nano-grain Structure and Method...

METHOD FOR AVOIDING OXIDE UNDERCUT DURING PRE-SILICIDE CLEAN FOR TH...

Electron holography method

Deposition of hafnium oxide and/or zirconium oxide and fabrication...

HIGH MOBILITY FETS USING AL2O3 AS A GATE OXIDE

Thermally stable poly-Si/high dielectric constant material interfaces