Michael Barsky

Person

Sherman Oaks, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Leakage barrier for GaN based HEMT active device
- Patent number 8,809,137
- Issue date Aug 19, 2014
- Northrop Grumman Systems Corporation
- Rajinder Randy Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage barrier for GaN based HEMT active device
- Patent number 8,809,907
- Issue date Aug 19, 2014
- Northrop Grumman Systems Corporation
- Rajinder Randy Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage barrier for GaN based HEMT active device
- Patent number 8,026,132
- Issue date Sep 27, 2011
- Northrop Grumman Systems Corporation
- Rajinder Randy Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor semiconductor device and fabricat...
- Patent number 7,709,860
- Issue date May 4, 2010
- Northrop Grumman Space & Mission Systems Corp.
- Linh Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor semiconductor device and fabricat...
- Patent number 7,582,518
- Issue date Sep 1, 2009
- Northrop Grumman Space & Mission Systems Corp.
- Linh Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dry etching process for compound semiconductors
- Patent number 7,262,137
- Issue date Aug 28, 2007
- Northrop Grumman Corporation
- Jennifer Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hard substrate wafer sawing process
- Patent number 7,041,579
- Issue date May 9, 2006
- Northrop Grumman Corporation
- Michael Edward Barsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer thinning techniques
- Patent number 6,764,573
- Issue date Jul 20, 2004
- Northrop Grumman Corporation
- Richard Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully relaxed channel HEMT device
- Patent number 6,710,379
- Issue date Mar 23, 2004
- Northrop Grumman Corporation
- Michael Wojtowicz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Automated spray cleaning apparatus for semiconductor wafers
- Patent number 6,638,366
- Issue date Oct 28, 2003
- Northrop Grumman Corporation
- Michael D. Lammert
- B08 - CLEANING
Information Patent Grant
Wafer adhesive for semiconductor dry etch applications
- Patent number 6,551,905
- Issue date Apr 22, 2003
- TRW Inc.
- Michael E. Barsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a large area, high gate current HEMT diode
- Patent number 6,524,899
- Issue date Feb 25, 2003
- TRW Inc.
- Ronald W. Grundbacher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially relaxed channel HEMT device
- Patent number 6,515,316
- Issue date Feb 4, 2003
- TRW Inc.
- Michael Wojtowicz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode device
- Patent number 6,452,221
- Issue date Sep 17, 2002
- TRW Inc.
- Richard Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-layer dielectric structure with rounded corners, and circuit...
- Patent number 6,396,679
- Issue date May 28, 2002
- TRW Inc.
- Ronald W. Grundbacher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for determining etch depth
- Patent number 6,383,826
- Issue date May 7, 2002
- TRW Inc.
- Michael E. Barsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precision wide band gap semiconductor etching
- Patent number 6,245,687
- Issue date Jun 12, 2001
- TRW Inc.
- Michael E. Barsky
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR

Patents Applicationslast 30 patents

Information Patent Application
LEAKAGE BARRIER FOR GaN BASED HEMT ACTIVE DEVICE
- Publication number 20120032185
- Publication date Feb 9, 2012
- Northrop Grumman Corporation
- Rajinder Randy Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR SEMICONDUCTOR DEVICE AND FABRICAT...
- Publication number 20090206369
- Publication date Aug 20, 2009
- Northrop Grumman Space & Mission Systems Corp.
- Linh Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKAGE BARRIER FOR GaN BASED HEMT ACTIVE DEVICE
- Publication number 20080153215
- Publication date Jun 26, 2008
- Rajinder Randy Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High electron mobility transistor semiconductor device and fabricat...
- Publication number 20080111157
- Publication date May 15, 2008
- Northrop Grumman Corporation
- Linh Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Leakage barrier for GaN based HEMT active device
- Publication number 20070218611
- Publication date Sep 20, 2007
- Northrop Grumman Corporation
- Rajinder Randy Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dry etching process for compound semiconductors
- Publication number 20050181616
- Publication date Aug 18, 2005
- Northrop Grumman Space & Mission Systems Corporation
- Jennifer Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Polymer via etching process
- Publication number 20050181618
- Publication date Aug 18, 2005
- Northrop Grumman Space & Mission Systems Corporation
- Jennifer Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hard substrate wafer sawing process
- Publication number 20050090076
- Publication date Apr 28, 2005
- Northrop Grumman Corporation
- Michael Edward Barsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Partially relaxed channel HEMT device
- Publication number 20030141519
- Publication date Jul 31, 2003
- TRW Inc.
- Michael Wojtowicz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wafer thinning techniques
- Publication number 20030071009
- Publication date Apr 17, 2003
- Richard Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Automated spray cleaning apparatus for semiconductor wafers
- Publication number 20020170579
- Publication date Nov 21, 2002
- Michael D. Lammert
- H01 - BASIC ELECTRIC ELEMENTS

Michael Barsky

Person

Patents Grantslast 30 patents

Leakage barrier for GaN based HEMT active device

Leakage barrier for GaN based HEMT active device

Leakage barrier for GaN based HEMT active device

High electron mobility transistor semiconductor device and fabricat...

High electron mobility transistor semiconductor device and fabricat...

Dry etching process for compound semiconductors

Hard substrate wafer sawing process

Wafer thinning techniques

Fully relaxed channel HEMT device

Automated spray cleaning apparatus for semiconductor wafers

Wafer adhesive for semiconductor dry etch applications

Process for forming a large area, high gate current HEMT diode

Partially relaxed channel HEMT device

Enhancement mode device

Single-layer dielectric structure with rounded corners, and circuit...

Method for determining etch depth

Precision wide band gap semiconductor etching

Patents Applicationslast 30 patents

LEAKAGE BARRIER FOR GaN BASED HEMT ACTIVE DEVICE

HIGH ELECTRON MOBILITY TRANSISTOR SEMICONDUCTOR DEVICE AND FABRICAT...

LEAKAGE BARRIER FOR GaN BASED HEMT ACTIVE DEVICE

High electron mobility transistor semiconductor device and fabricat...

Leakage barrier for GaN based HEMT active device

Dry etching process for compound semiconductors

Polymer via etching process

Hard substrate wafer sawing process

Partially relaxed channel HEMT device

Wafer thinning techniques

Automated spray cleaning apparatus for semiconductor wafers