Michael CHUDZIK

Person

Mountain View, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Indium-gallium-nitride light emitting diodes with increased red-lig...
- Patent number 11,837,683
- Issue date Dec 5, 2023
- Applied Materials, Inc.
- Michael Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to fabricate dual pore devices
- Patent number 11,536,708
- Issue date Dec 27, 2022
- Applied Materials, Inc.
- Mark J. Saly
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Deep trench integration processes and devices
- Patent number 11,410,873
- Issue date Aug 9, 2022
- Applied Materials, Inc.
- Lan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three color light sources integrated on a single wafer
- Patent number 11,322,649
- Issue date May 3, 2022
- Applied Materials, Inc.
- Michael Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around and FinFET device isolation
- Patent number 11,145,761
- Issue date Oct 12, 2021
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around device isolation
- Patent number 10,573,719
- Issue date Feb 25, 2020
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around and FinFET device isolation
- Patent number 10,490,666
- Issue date Nov 26, 2019
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench metal insulator metal capacitor with oxygen gettering layer
- Patent number 9,911,597
- Issue date Mar 6, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around and FinFET device isolation
- Patent number 9,865,735
- Issue date Jan 9, 2018
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hydroxyl group termination for nucleation of a dielectric metallic...
- Patent number 9,831,084
- Issue date Nov 28, 2017
- International Business Machines Corporation
- Takashi Ando
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Fabrication of IC structure with metal plug
- Patent number 9,793,216
- Issue date Oct 17, 2017
- GLOBALFOUNDRIES Inc.
- Joyeeta Nag
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-threshold voltage structures with a lanthanum nitride film an...
- Patent number 9,748,354
- Issue date Aug 29, 2017
- Applied Materials, Inc.
- Wei V. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having improved electromigration performance and...
- Patent number 9,679,810
- Issue date Jun 13, 2017
- GLOBALFOUNDRIES Inc.
- Joyeeta Nag
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of higher-K dielectrics
- Patent number 9,673,108
- Issue date Jun 6, 2017
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench metal-insulator-metal capacitor with oxygen gettering layer
- Patent number 9,653,534
- Issue date May 16, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement channel TFET
- Patent number 9,627,508
- Issue date Apr 18, 2017
- GLOBALFOUNDRIES Inc.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET and nanowire semiconductor devices with suspended channel re...
- Patent number 9,577,100
- Issue date Feb 21, 2017
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Changing effective work function using ion implantation during dual...
- Patent number 9,564,505
- Issue date Feb 7, 2017
- GLOBALFOUNDRIES Inc.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth of material on source/drain regions of FinFET stru...
- Patent number 9,536,985
- Issue date Jan 3, 2017
- GLOBALFOUNDRIES Inc.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trapping dislocations in high-mobility fins below isolation layer
- Patent number 9,524,986
- Issue date Dec 20, 2016
- GLOBALFOUNDRIES Inc.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of higher-k dielectrics
- Patent number 9,478,425
- Issue date Oct 25, 2016
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around device isolation
- Patent number 9,460,920
- Issue date Oct 4, 2016
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Merged source drain epitaxy
- Patent number 9,437,496
- Issue date Sep 6, 2016
- GLOBALFOUNDRIES Inc.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure to reduce FET threshold voltage shift due to o...
- Patent number 9,431,289
- Issue date Aug 30, 2016
- GLOBALFOUNDRIES Inc.
- Christopher V. Baiocco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable length multi-channel replacement metal gate including sili...
- Patent number 9,397,177
- Issue date Jul 19, 2016
- GLOBALFOUNDRIES Inc.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable length multi-channel replacement metal gate including sili...
- Patent number 9,373,690
- Issue date Jun 21, 2016
- GLOBALFOUNDRIES Inc.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hydroxyl group termination for nucleation of a dielectric metallic...
- Patent number 9,373,501
- Issue date Jun 21, 2016
- International Business Machines Corporation
- Takashi Ando
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Non-volatile memory structure employing high-k gate dielectric and...
- Patent number 9,318,336
- Issue date Apr 19, 2016
- GlobalFoundries U.S. 2 LLC
- Nicolas Breil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement metal gate structures for effective work function control
- Patent number 9,293,461
- Issue date Mar 22, 2016
- GLOBALFOUNDRIES Inc.
- Unoh Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including graded gate stack, related method an...
- Patent number 9,257,519
- Issue date Feb 9, 2016
- GLOBALFOUNDRIES, INC.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INDIUM-GALLIUM-NITRIDE LIGHT EMITTING DIODES WITH INCREASED QUANTUM...
- Publication number 20240247407
- Publication date Jul 25, 2024
- Applied Materials, Inc.
- Michael Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NUCLEATION LAYERS FOR GROWTH OF GALLIUM-AND-NITROGEN-CONTAINING REG...
- Publication number 20220319836
- Publication date Oct 6, 2022
- Applied Materials, Inc.
- Michael Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDIUM-GALLIUM-NITRIDE LIGHT EMITTING DIODES WITH INCREASED RED-LIG...
- Publication number 20220293821
- Publication date Sep 15, 2022
- Applied Materials, Inc.
- Michael Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDIUM-GALLIUM-NITRIDE LIGHT EMITTING DIODES WITH LIGHT REFLECTING...
- Publication number 20220285584
- Publication date Sep 8, 2022
- Applied Materials, Inc.
- Michel Khoury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDIUM-GALLIUM-NITRIDE LIGHT EMITTING DIODES WITH INCREASED QUANTUM...
- Publication number 20220259766
- Publication date Aug 18, 2022
- Applied Materials, Inc.
- Michael Chudzik
- C30 - CRYSTAL GROWTH
Information Patent Application
DEEP TRENCH INTEGRATION PROCESSES AND DEVICES
- Publication number 20220165610
- Publication date May 26, 2022
- Applied Materials, Inc.
- Lan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE COLOR LIGHT SOURCES INTEGRATED ON A SINGLE WAFER
- Publication number 20220085238
- Publication date Mar 17, 2022
- Applied Materials, Inc.
- Michael Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS TO FABRICATE DUAL PORE DEVICES
- Publication number 20210215664
- Publication date Jul 15, 2021
- Applied Materials, Inc.
- Mark J. SALY
- B82 - NANO-TECHNOLOGY
Information Patent Application
PHYSICAL VAPOR DEPOSITION OF DOPED TRANSITION METAL OXIDE AND POST-...
- Publication number 20200044152
- Publication date Feb 6, 2020
- Applied Materials, Inc.
- MINRUI YU
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION
- Publication number 20200035822
- Publication date Jan 30, 2020
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION
- Publication number 20180061978
- Publication date Mar 1, 2018
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH METAL INSULATOR METAL CAPACITOR WITH OXYGEN GETTERING LAYER
- Publication number 20170250073
- Publication date Aug 31, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HAVING IMPROVED ELECTROMIGRATION PERFORMANCE AND...
- Publication number 20170236780
- Publication date Aug 17, 2017
- GLOBALFOUNDRIES INC.
- Joyeeta Nag
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF IC STRUCTURE WITH METAL PLUG
- Publication number 20170213792
- Publication date Jul 27, 2017
- GLOBALFOUNDRIES INC.
- Joyeeta Nag
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING NANOWIRES FOR HORIZONTAL GATE ALL AROUND DEV...
- Publication number 20170194430
- Publication date Jul 6, 2017
- Applied Materials, Inc.
- Bingxi Sun WOOD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-THRESHOLD VOLTAGE STRUCTURES WITH A LANTHANUM NITRIDE FILM AN...
- Publication number 20170179252
- Publication date Jun 22, 2017
- Applied Materials, Inc.
- Wei V. TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF HIGHER-K DIELECTRICS
- Publication number 20170170077
- Publication date Jun 15, 2017
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTAL GATE ALL AROUND DEVICE ISOLATION
- Publication number 20170018624
- Publication date Jan 19, 2017
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION
- Publication number 20160336405
- Publication date Nov 17, 2016
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT CHANNEL TFET
- Publication number 20160308025
- Publication date Oct 20, 2016
- GLOBALFOUNDRIES INC.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH METAL-INSULATOR-METAL CAPACITOR WITH OXYGEN GETTERING LAYER
- Publication number 20160181353
- Publication date Jun 23, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL GROWTH OF MATERIAL ON SOURCE/DRAIN REGIONS OF FINFET STRU...
- Publication number 20160093720
- Publication date Mar 31, 2016
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL PLATING SYSTEM INCLUDING GAS BUBBLE REMOVAL UNIT
- Publication number 20160047058
- Publication date Feb 18, 2016
- GLOBALFOUNDRIES Inc.
- Shafaat Ahmed
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
HYDROXYL GROUP TERMINATION FOR NUCLEATION OF A DIELECTRIC METALLIC...
- Publication number 20160027640
- Publication date Jan 28, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRAPPING DISLOCATIONS IN HIGH-MOBILITY FINS BELOW ISOLATION LAYER
- Publication number 20150380438
- Publication date Dec 31, 2015
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET AND NANOWIRE SEMICONDUCTOR DEVICES WITH SUSPENDED CHANNEL RE...
- Publication number 20150364603
- Publication date Dec 17, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE LENGTH MULTI-CHANNEL REPLACEMENT METAL GATE INCLUDING SILI...
- Publication number 20150349076
- Publication date Dec 3, 2015
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY FINFET DEVICES WITH UNMERGED FINS
- Publication number 20150333145
- Publication date Nov 19, 2015
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Structure to Reduce FET Threshold Voltage Shift Due to O...
- Publication number 20150287629
- Publication date Oct 8, 2015
- International Business Machines Corporation
- Christopher V. Baiocco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-PLASMA NITRIDATION PROCESS FOR A GATE DIELECTRIC
- Publication number 20150187901
- Publication date Jul 2, 2015
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS

Michael CHUDZIK

Person

Patents Grantslast 30 patents

Indium-gallium-nitride light emitting diodes with increased red-lig...

Methods to fabricate dual pore devices

Deep trench integration processes and devices

Three color light sources integrated on a single wafer

Horizontal gate all around and FinFET device isolation

Horizontal gate all around device isolation

Horizontal gate all around and FinFET device isolation

Trench metal insulator metal capacitor with oxygen gettering layer

Horizontal gate all around and FinFET device isolation

Hydroxyl group termination for nucleation of a dielectric metallic...

Fabrication of IC structure with metal plug

Multi-threshold voltage structures with a lanthanum nitride film an...

Integrated circuit having improved electromigration performance and...

Fabrication of higher-K dielectrics

Trench metal-insulator-metal capacitor with oxygen gettering layer

Replacement channel TFET

FinFET and nanowire semiconductor devices with suspended channel re...

Changing effective work function using ion implantation during dual...

Epitaxial growth of material on source/drain regions of FinFET stru...

Trapping dislocations in high-mobility fins below isolation layer

Fabrication of higher-k dielectrics

Horizontal gate all around device isolation

Merged source drain epitaxy

Method and structure to reduce FET threshold voltage shift due to o...

Variable length multi-channel replacement metal gate including sili...

Variable length multi-channel replacement metal gate including sili...

Hydroxyl group termination for nucleation of a dielectric metallic...

Non-volatile memory structure employing high-k gate dielectric and...

Replacement metal gate structures for effective work function control

Semiconductor device including graded gate stack, related method an...

Patents Applicationslast 30 patents

INDIUM-GALLIUM-NITRIDE LIGHT EMITTING DIODES WITH INCREASED QUANTUM...

NUCLEATION LAYERS FOR GROWTH OF GALLIUM-AND-NITROGEN-CONTAINING REG...

INDIUM-GALLIUM-NITRIDE LIGHT EMITTING DIODES WITH INCREASED RED-LIG...

INDIUM-GALLIUM-NITRIDE LIGHT EMITTING DIODES WITH LIGHT REFLECTING...

INDIUM-GALLIUM-NITRIDE LIGHT EMITTING DIODES WITH INCREASED QUANTUM...

DEEP TRENCH INTEGRATION PROCESSES AND DEVICES

THREE COLOR LIGHT SOURCES INTEGRATED ON A SINGLE WAFER

METHODS TO FABRICATE DUAL PORE DEVICES

PHYSICAL VAPOR DEPOSITION OF DOPED TRANSITION METAL OXIDE AND POST-...

HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION

HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION

TRENCH METAL INSULATOR METAL CAPACITOR WITH OXYGEN GETTERING LAYER

INTEGRATED CIRCUIT HAVING IMPROVED ELECTROMIGRATION PERFORMANCE AND...

FABRICATION OF IC STRUCTURE WITH METAL PLUG

METHOD FOR FABRICATING NANOWIRES FOR HORIZONTAL GATE ALL AROUND DEV...

MULTI-THRESHOLD VOLTAGE STRUCTURES WITH A LANTHANUM NITRIDE FILM AN...

FABRICATION OF HIGHER-K DIELECTRICS

HORIZONTAL GATE ALL AROUND DEVICE ISOLATION

HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION

REPLACEMENT CHANNEL TFET

TRENCH METAL-INSULATOR-METAL CAPACITOR WITH OXYGEN GETTERING LAYER

EPITAXIAL GROWTH OF MATERIAL ON SOURCE/DRAIN REGIONS OF FINFET STRU...

METAL PLATING SYSTEM INCLUDING GAS BUBBLE REMOVAL UNIT

HYDROXYL GROUP TERMINATION FOR NUCLEATION OF A DIELECTRIC METALLIC...

TRAPPING DISLOCATIONS IN HIGH-MOBILITY FINS BELOW ISOLATION LAYER

FINFET AND NANOWIRE SEMICONDUCTOR DEVICES WITH SUSPENDED CHANNEL RE...

VARIABLE LENGTH MULTI-CHANNEL REPLACEMENT METAL GATE INCLUDING SILI...

HIGH DENSITY FINFET DEVICES WITH UNMERGED FINS

Method and Structure to Reduce FET Threshold Voltage Shift Due to O...

MULTI-PLASMA NITRIDATION PROCESS FOR A GATE DIELECTRIC