Michael D. Craven

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Non-polar (Al,B,In,Ga)N quantum wells
- Patent number 9,893,236
- Issue date Feb 13, 2018
- The Regents of the University of California
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Grant
Non-polar gallium nitride thin films grown by metalorganic chemical...
- Patent number 9,039,834
- Issue date May 26, 2015
- The Regents of the University of California
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Grant
Dislocation reduction in non-polar III-nitride thin films
- Patent number 8,809,867
- Issue date Aug 19, 2014
- The Regents of the University of California
- Michael D. Craven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of planar, non-polar, group-III nitride films
- Patent number 8,450,192
- Issue date May 28, 2013
- The Regents of the University of California
- Benjamin A. Haskell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials...
- Patent number 8,188,458
- Issue date May 29, 2012
- The Regents of the University of California
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Grant
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials...
- Patent number 7,982,208
- Issue date Jul 19, 2011
- The Regents of the University of California
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Grant
Growth of reduced dislocation density non-polar gallium nitride
- Patent number 7,847,293
- Issue date Dec 7, 2010
- The Regents of the University of California
- Benjamin A. Haskell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Growth of planar, non-polar gallium nitride by hydride vapor phase...
- Patent number 7,427,555
- Issue date Sep 23, 2008
- The Regents of the University of California
- Benjamin A. Haskell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of reduced dislocation density non-polar gallium nitride by...
- Patent number 7,220,658
- Issue date May 22, 2007
- The Regents of the University of California
- Benjamin A Haskell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials...
- Patent number 7,091,514
- Issue date Aug 15, 2006
- The Regents of the University of California
- Michael D. Craven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dislocation reduction in non-polar gallium nitride thin films
- Patent number 6,900,070
- Issue date May 31, 2005
- The Regents of the University of California
- Michael D. Craven
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NON-POLAR (Al,B,In,Ga)N QUANTUM WELLS
- Publication number 20160043278
- Publication date Feb 11, 2016
- The Regents of the University of California
- Michael D. Craven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS...
- Publication number 20120205623
- Publication date Aug 16, 2012
- The Regents of the University of California
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Application
GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE
- Publication number 20120074425
- Publication date Mar 29, 2012
- Japan Science and Technology Agency
- Benjamin A. Haskell
- C30 - CRYSTAL GROWTH
Information Patent Application
DISLOCATION REDUCTION IN NON-POLAR III-NITRIDE THIN FILMS
- Publication number 20120068184
- Publication date Mar 22, 2012
- The Regents of the University of California
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Application
GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE
- Publication number 20110278585
- Publication date Nov 17, 2011
- Japan Science and Technology Agency
- Benjamin A. Haskell
- C30 - CRYSTAL GROWTH
Information Patent Application
NON-POLAR GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL...
- Publication number 20110229639
- Publication date Sep 22, 2011
- The Regents of the University of California
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Application
NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS...
- Publication number 20110204329
- Publication date Aug 25, 2011
- The Regents of the University of California
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE WITH CURVATURE CONTROL LAYER
- Publication number 20110177638
- Publication date Jul 21, 2011
- Koninklijke Philips Electronics N.V.
- Linda T. ROMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWTH OF PLANAR, NON-POLAR, GROUP-III NITRIDE FILMS
- Publication number 20090001519
- Publication date Jan 1, 2009
- The Regents of the University of California
- Benjamin A. Haskell
- C30 - CRYSTAL GROWTH
Information Patent Application
DISLOCATION REDUCTION IN NON-POLAR III-NITRIDE THIN FILMS
- Publication number 20080135853
- Publication date Jun 12, 2008
- The Regents of the University of California
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Application
Non-polar (a1,b,in,ga)n quantum wells
- Publication number 20070128844
- Publication date Jun 7, 2007
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Application
GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE
- Publication number 20070126023
- Publication date Jun 7, 2007
- The Regents of the University of California
- Benjamin A. Haskell
- C30 - CRYSTAL GROWTH
Information Patent Application
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials...
- Publication number 20060278865
- Publication date Dec 14, 2006
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Application
Growth of reduced dislocation density non-polar gallium nitride by...
- Publication number 20060128124
- Publication date Jun 15, 2006
- Benjamin A. Haskell
- C30 - CRYSTAL GROWTH
Information Patent Application
Growth of planar, non-polar a-plane gallium nitride by hydride vapo...
- Publication number 20060008941
- Publication date Jan 12, 2006
- BASF Aktiengesellschaft
- Benjamin A. Haskell
- C30 - CRYSTAL GROWTH
Information Patent Application
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials...
- Publication number 20050040385
- Publication date Feb 24, 2005
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Application
Dislocation reduction in non-polar gallium nitride thin films
- Publication number 20030230235
- Publication date Dec 18, 2003
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Application
Non-polar a-plane gallium nitride thin films grown by metalorganic...
- Publication number 20030198837
- Publication date Oct 23, 2003
- Michael D. Craven
- C30 - CRYSTAL GROWTH

Michael D. Craven

Person

Patents Grantslast 30 patents

Non-polar (Al,B,In,Ga)N quantum wells

Non-polar gallium nitride thin films grown by metalorganic chemical...

Dislocation reduction in non-polar III-nitride thin films

Growth of planar, non-polar, group-III nitride films

Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials...

Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials...

Growth of reduced dislocation density non-polar gallium nitride

Growth of planar, non-polar gallium nitride by hydride vapor phase...

Growth of reduced dislocation density non-polar gallium nitride by...

Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials...

Dislocation reduction in non-polar gallium nitride thin films

Patents Applicationslast 30 patents

NON-POLAR (Al,B,In,Ga)N QUANTUM WELLS

NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS...

GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE

DISLOCATION REDUCTION IN NON-POLAR III-NITRIDE THIN FILMS

GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE

NON-POLAR GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL...

NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS...

SEMICONDUCTOR LIGHT EMITTING DEVICE WITH CURVATURE CONTROL LAYER

GROWTH OF PLANAR, NON-POLAR, GROUP-III NITRIDE FILMS

DISLOCATION REDUCTION IN NON-POLAR III-NITRIDE THIN FILMS

Non-polar (a1,b,in,ga)n quantum wells

GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE

Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials...

Growth of reduced dislocation density non-polar gallium nitride by...

Growth of planar, non-polar a-plane gallium nitride by hydride vapo...

Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials...

Dislocation reduction in non-polar gallium nitride thin films

Non-polar a-plane gallium nitride thin films grown by metalorganic...