Michael D. Craven

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method and system for control of sidewall orientation in vertical g...
- Patent number 12,224,344
- Issue date Feb 11, 2025
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-polar (Al,B,In,Ga)N quantum wells
- Patent number 9,893,236
- Issue date Feb 13, 2018
- The Regents of the University of California
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Grant
Non-polar gallium nitride thin films grown by metalorganic chemical...
- Patent number 9,039,834
- Issue date May 26, 2015
- The Regents of the University of California
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Grant
Dislocation reduction in non-polar III-nitride thin films
- Patent number 8,809,867
- Issue date Aug 19, 2014
- The Regents of the University of California
- Michael D. Craven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of planar, non-polar, group-III nitride films
- Patent number 8,450,192
- Issue date May 28, 2013
- The Regents of the University of California
- Benjamin A. Haskell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials...
- Patent number 8,188,458
- Issue date May 29, 2012
- The Regents of the University of California
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Grant
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials...
- Patent number 7,982,208
- Issue date Jul 19, 2011
- The Regents of the University of California
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Grant
Growth of reduced dislocation density non-polar gallium nitride
- Patent number 7,847,293
- Issue date Dec 7, 2010
- The Regents of the University of California
- Benjamin A. Haskell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Growth of planar, non-polar gallium nitride by hydride vapor phase...
- Patent number 7,427,555
- Issue date Sep 23, 2008
- The Regents of the University of California
- Benjamin A. Haskell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of reduced dislocation density non-polar gallium nitride by...
- Patent number 7,220,658
- Issue date May 22, 2007
- The Regents of the University of California
- Benjamin A Haskell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials...
- Patent number 7,091,514
- Issue date Aug 15, 2006
- The Regents of the University of California
- Michael D. Craven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dislocation reduction in non-polar gallium nitride thin films
- Patent number 6,900,070
- Issue date May 31, 2005
- The Regents of the University of California
- Michael D. Craven
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND SYSTEM FOR CONTROL OF SIDEWALL ORIENTATION IN VERTICAL G...
- Publication number 20250151319
- Publication date May 8, 2025
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford Ian DROWLEY
Information Patent Application
METHOD AND SYSTEM FOR CONTROL OF SIDEWALL ORIENTATION IN VERTICAL G...
- Publication number 20220328688
- Publication date Oct 13, 2022
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-POLAR (Al,B,In,Ga)N QUANTUM WELLS
- Publication number 20160043278
- Publication date Feb 11, 2016
- The Regents of the University of California
- Michael D. Craven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS...
- Publication number 20120205623
- Publication date Aug 16, 2012
- The Regents of the University of California
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Application
GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE
- Publication number 20120074425
- Publication date Mar 29, 2012
- Japan Science and Technology Agency
- Benjamin A. Haskell
- C30 - CRYSTAL GROWTH
Information Patent Application
DISLOCATION REDUCTION IN NON-POLAR III-NITRIDE THIN FILMS
- Publication number 20120068184
- Publication date Mar 22, 2012
- The Regents of the University of California
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Application
GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE
- Publication number 20110278585
- Publication date Nov 17, 2011
- Japan Science and Technology Agency
- Benjamin A. Haskell
- C30 - CRYSTAL GROWTH
Information Patent Application
NON-POLAR GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL...
- Publication number 20110229639
- Publication date Sep 22, 2011
- The Regents of the University of California
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Application
NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS...
- Publication number 20110204329
- Publication date Aug 25, 2011
- The Regents of the University of California
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE WITH CURVATURE CONTROL LAYER
- Publication number 20110177638
- Publication date Jul 21, 2011
- Koninklijke Philips Electronics N.V.
- Linda T. ROMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWTH OF PLANAR, NON-POLAR, GROUP-III NITRIDE FILMS
- Publication number 20090001519
- Publication date Jan 1, 2009
- The Regents of the University of California
- Benjamin A. Haskell
- C30 - CRYSTAL GROWTH
Information Patent Application
DISLOCATION REDUCTION IN NON-POLAR III-NITRIDE THIN FILMS
- Publication number 20080135853
- Publication date Jun 12, 2008
- The Regents of the University of California
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Application
Non-polar (a1,b,in,ga)n quantum wells
- Publication number 20070128844
- Publication date Jun 7, 2007
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Application
GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE
- Publication number 20070126023
- Publication date Jun 7, 2007
- The Regents of the University of California
- Benjamin A. Haskell
- C30 - CRYSTAL GROWTH
Information Patent Application
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials...
- Publication number 20060278865
- Publication date Dec 14, 2006
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Application
Growth of reduced dislocation density non-polar gallium nitride by...
- Publication number 20060128124
- Publication date Jun 15, 2006
- Benjamin A. Haskell
- C30 - CRYSTAL GROWTH
Information Patent Application
Growth of planar, non-polar a-plane gallium nitride by hydride vapo...
- Publication number 20060008941
- Publication date Jan 12, 2006
- BASF Aktiengesellschaft
- Benjamin A. Haskell
- C30 - CRYSTAL GROWTH
Information Patent Application
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials...
- Publication number 20050040385
- Publication date Feb 24, 2005
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Application
Dislocation reduction in non-polar gallium nitride thin films
- Publication number 20030230235
- Publication date Dec 18, 2003
- Michael D. Craven
- C30 - CRYSTAL GROWTH
Information Patent Application
Non-polar a-plane gallium nitride thin films grown by metalorganic...
- Publication number 20030198837
- Publication date Oct 23, 2003
- Michael D. Craven
- C30 - CRYSTAL GROWTH

Michael D. Craven

Person

Patents Grantslast 30 patents

Method and system for control of sidewall orientation in vertical g...

Non-polar (Al,B,In,Ga)N quantum wells

Non-polar gallium nitride thin films grown by metalorganic chemical...

Dislocation reduction in non-polar III-nitride thin films

Growth of planar, non-polar, group-III nitride films

Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials...

Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials...

Growth of reduced dislocation density non-polar gallium nitride

Growth of planar, non-polar gallium nitride by hydride vapor phase...

Growth of reduced dislocation density non-polar gallium nitride by...

Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials...

Dislocation reduction in non-polar gallium nitride thin films

Patents Applicationslast 30 patents

METHOD AND SYSTEM FOR CONTROL OF SIDEWALL ORIENTATION IN VERTICAL G...

METHOD AND SYSTEM FOR CONTROL OF SIDEWALL ORIENTATION IN VERTICAL G...

NON-POLAR (Al,B,In,Ga)N QUANTUM WELLS

NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS...

GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE

DISLOCATION REDUCTION IN NON-POLAR III-NITRIDE THIN FILMS

GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE

NON-POLAR GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL...

NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS...

SEMICONDUCTOR LIGHT EMITTING DEVICE WITH CURVATURE CONTROL LAYER

GROWTH OF PLANAR, NON-POLAR, GROUP-III NITRIDE FILMS

DISLOCATION REDUCTION IN NON-POLAR III-NITRIDE THIN FILMS

Non-polar (a1,b,in,ga)n quantum wells

GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE

Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials...

Growth of reduced dislocation density non-polar gallium nitride by...

Growth of planar, non-polar a-plane gallium nitride by hydride vapo...

Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials...

Dislocation reduction in non-polar gallium nitride thin films

Non-polar a-plane gallium nitride thin films grown by metalorganic...