Michael D. Steigerwalt

Person

Newburgh, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Self-aligned embedded SiGe structure and method of manufacturing th...
- Patent number 8,598,009
- Issue date Dec 3, 2013
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of integrating reverse eSiGe on NFET and SiGe channel on PF...
- Patent number 8,232,186
- Issue date Jul 31, 2012
- International Business Machines Corporation
- Eric C. T. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned embedded SiGe structure and method of manufacturing th...
- Patent number 8,222,673
- Issue date Jul 17, 2012
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin SOI vertical bipolar transistors with an inversion colle...
- Patent number 7,911,024
- Issue date Mar 22, 2011
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin SOI vertical bipolar transistors with an inversion colle...
- Patent number 7,763,518
- Issue date Jul 27, 2010
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical bipolar transistor with a majority carrier accumulation la...
- Patent number 7,691,716
- Issue date Apr 6, 2010
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a vertical bipolar transistor with a majority...
- Patent number 7,485,537
- Issue date Feb 3, 2009
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
STI formation in semiconductor device including SOI and bulk silico...
- Patent number 7,394,131
- Issue date Jul 1, 2008
- International Business Machines Corporation
- Michael D. Steigerwalt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin SOI vertical bipolar transistors with an inversion colle...
- Patent number 7,375,410
- Issue date May 20, 2008
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
STI formation in semiconductor device including SOI and bulk silico...
- Patent number 7,118,986
- Issue date Oct 10, 2006
- International Business Machines Corporation
- Michael D. Steigerwalt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Patterning SOI with silicon mask to create box at different depths
- Patent number 7,115,463
- Issue date Oct 3, 2006
- International Business Machines Corporation
- Devendra K. Sadana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical bipolar transistor with a majority carrier accumulation la...
- Patent number 7,115,965
- Issue date Oct 3, 2006
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for deep trench etching through a buried insulator layer
- Patent number 6,995,094
- Issue date Feb 7, 2006
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI trench capacitor cell incorporating a low-leakage floating body...
- Patent number 6,964,897
- Issue date Nov 15, 2005
- International Business Machines Corporation
- Karen A. Bard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface engineering to prevent epi growth on gate poly during selec...
- Patent number 6,900,092
- Issue date May 31, 2005
- International Business Machines Corporation
- Atul C. Ajmera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface engineering to prevent EPI growth on gate poly during selec...
- Patent number 6,440,807
- Issue date Aug 27, 2002
- International Business Machines Corporation
- Atul C. Ajmera
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BUFFER LAYER TO INHIBIT WORMHOLES IN SEMICONDUCTOR FABRICATION
- Publication number 20180197734
- Publication date Jul 12, 2018
- GLOBALFOUNDRIES INC.
- Bhupesh CHANDRA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF INTEGRATING REVERSE eSiGe ON NFET AND SiGe CHANNEL ON PF...
- Publication number 20120228716
- Publication date Sep 13, 2012
- International Business Machines Corporation
- Eric C. T. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED EMBEDDED SiGe STRUCTURE AND METHOD OF MANUFACTURING TH...
- Publication number 20120208337
- Publication date Aug 16, 2012
- GLOBALFOUNDRIES INC.
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED EMBEDDED SiGe STRUCTURE AND METHOD OF MANUFACTURING TH...
- Publication number 20110298008
- Publication date Dec 8, 2011
- GLOBALFOUNDRIES INC.
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA-THIN SOI VERTICAL BIPOLAR TRANSISTORS WITH AN INVERSION COLLE...
- Publication number 20100207683
- Publication date Aug 19, 2010
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF INTEGRATING REVERSE eSiGe ON NFET AND SiGe CHANNEL ON PF...
- Publication number 20090294801
- Publication date Dec 3, 2009
- International Business Machines Corporation
- Eric C. T. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL BIPOLAR TRANSISTOR WITH A MAJORITY CARRIER ACCUMULATION LA...
- Publication number 20080261371
- Publication date Oct 23, 2008
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA-THIN SOI VERTICAL BIPOLAR TRANSISTORS WITH AN INVERSION COLLE...
- Publication number 20080230869
- Publication date Sep 25, 2008
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA-THIN SOI VERTICAL BIPOLAR TRANSISTORS WITH AN INVERSION COLLE...
- Publication number 20080132025
- Publication date Jun 5, 2008
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical bipolar transistor with a majority carrier accumulation la...
- Publication number 20060263993
- Publication date Nov 23, 2006
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STI FORMATION IN SEMICONDUCTOR DEVICE INCLUDING SOI AND BULK SILICO...
- Publication number 20060244093
- Publication date Nov 2, 2006
- Michael D. Steigerwalt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical bipolar transistor with a majority carrier accumulation la...
- Publication number 20060043530
- Publication date Mar 2, 2006
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Patterning SOI with silicon mask to create box at different depths
- Publication number 20060040476
- Publication date Feb 23, 2006
- International Business Machines Corporation
- Devendra K. Sadana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STI FORMATION IN SEMICONDUCTOR DEVICE INCLUDING SOI AND BULK SILICO...
- Publication number 20050282392
- Publication date Dec 22, 2005
- International Business Machines Corporation
- Michael D. Steigerwalt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultra-thin SOI vertical bipolar transistors with an inversion colle...
- Publication number 20050184360
- Publication date Aug 25, 2005
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEEP TRENCH ETCHING THROUGH A BURIED INSULATOR LAYER
- Publication number 20050079724
- Publication date Apr 14, 2005
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI TRENCH CAPACITOR CELL INCORPORATING A LOW-LEAKAGE FLOATING BODY...
- Publication number 20040248363
- Publication date Dec 9, 2004
- International Business Machines Corporation
- Karen A. Bard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Surface engineering to prevent epi growth on gate poly during selec...
- Publication number 20020192888
- Publication date Dec 19, 2002
- International Business Machines Corporation
- Atul C. Ajmera
- H01 - BASIC ELECTRIC ELEMENTS

Michael D. Steigerwalt

Person

Patents Grantslast 30 patents

Self-aligned embedded SiGe structure and method of manufacturing th...

Methods of integrating reverse eSiGe on NFET and SiGe channel on PF...

Self-aligned embedded SiGe structure and method of manufacturing th...

Ultra-thin SOI vertical bipolar transistors with an inversion colle...

Ultra-thin SOI vertical bipolar transistors with an inversion colle...

Vertical bipolar transistor with a majority carrier accumulation la...

Method of fabricating a vertical bipolar transistor with a majority...

STI formation in semiconductor device including SOI and bulk silico...

Ultra-thin SOI vertical bipolar transistors with an inversion colle...

STI formation in semiconductor device including SOI and bulk silico...

Patterning SOI with silicon mask to create box at different depths

Vertical bipolar transistor with a majority carrier accumulation la...

Method for deep trench etching through a buried insulator layer

SOI trench capacitor cell incorporating a low-leakage floating body...

Surface engineering to prevent epi growth on gate poly during selec...

Surface engineering to prevent EPI growth on gate poly during selec...

Patents Applicationslast 30 patents

BUFFER LAYER TO INHIBIT WORMHOLES IN SEMICONDUCTOR FABRICATION

METHODS OF INTEGRATING REVERSE eSiGe ON NFET AND SiGe CHANNEL ON PF...

SELF-ALIGNED EMBEDDED SiGe STRUCTURE AND METHOD OF MANUFACTURING TH...

SELF-ALIGNED EMBEDDED SiGe STRUCTURE AND METHOD OF MANUFACTURING TH...

ULTRA-THIN SOI VERTICAL BIPOLAR TRANSISTORS WITH AN INVERSION COLLE...

METHODS OF INTEGRATING REVERSE eSiGe ON NFET AND SiGe CHANNEL ON PF...

VERTICAL BIPOLAR TRANSISTOR WITH A MAJORITY CARRIER ACCUMULATION LA...

ULTRA-THIN SOI VERTICAL BIPOLAR TRANSISTORS WITH AN INVERSION COLLE...

ULTRA-THIN SOI VERTICAL BIPOLAR TRANSISTORS WITH AN INVERSION COLLE...

Vertical bipolar transistor with a majority carrier accumulation la...

STI FORMATION IN SEMICONDUCTOR DEVICE INCLUDING SOI AND BULK SILICO...

Vertical bipolar transistor with a majority carrier accumulation la...

Patterning SOI with silicon mask to create box at different depths

STI FORMATION IN SEMICONDUCTOR DEVICE INCLUDING SOI AND BULK SILICO...

Ultra-thin SOI vertical bipolar transistors with an inversion colle...

METHOD FOR DEEP TRENCH ETCHING THROUGH A BURIED INSULATOR LAYER

SOI TRENCH CAPACITOR CELL INCORPORATING A LOW-LEAKAGE FLOATING BODY...

Surface engineering to prevent epi growth on gate poly during selec...